LRC-LN2306LT1G

LN2306LT1G  

S-LN2306LT1G  

30V N-Channel Enhancement-Mode MOSFET  

1. FEATURES  

●

VDS= 30V  

●

RDS(ON), VGS@10V, IDS@5.8A = 38mΩ  

●

RDS(ON), VGS@4.5V, IDS@5.0A = 43mΩ  

●

RDS(ON), VGS@2.5V, IDS@4.0A = 62mΩ  

SOT23(TO-236)  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

2. APPLICATIONS  

●

Advanced trench process technology  

●

High density cell design for ultra low on-resistance  

3. DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

Shipping  

LN2306LT1G  

LN2306LT3G  

N06  

3000/Tape&Reel  

10000/Tape&Reel  

N06  

4. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VDSS  

VGS  

Limits  

Unit  

V

Drain–Source Voltage  

30  

Gate–to–Source Voltage – Continuous  

Drain Current  

±12  

V

A

– Continuous TA = 25°C  

– Pulsed(Note 1)  

ID  

5.8  

30  

IDM  

5. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

PD  

Limits  

1.4  

Unit  

W

Maximum Power Dissipation  

Thermal Resistance,  

RΘJA  

140  

ºC/W  

Junction–to–Ambient(Note 2)  

Junction and

 

Storage temperature  

TJ,Tstg

−55

∼

+150  

º

C  

1. Repetitive Rating: Pulse width limited by the Maximum junction temperation.  

2. 1-in² 2oz Cu PCB board.  

Leshan Radio Company, LTD.  

Rev.C Mar

 

2016  

1/5  

LN2306LT1G, S-LN2306LT1G  

30V N-Channel Enhancement-Mode MOSFET  

6. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Vdc  

Drain–Source Breakdown Voltage  

(VGS = 0, ID = 250μAdc)  

V(BR)DSS  

IDSS  

30  

–

–

–

–

1

μAdc  

nAdc  

nAdc  

S

Zero Gate Voltage Drain Current  

(VDS=9.6V, VGS=0V)  

Gate–Body Leakage Current, Forward  

(VDS = 0 V, VGS = 8 V)  

IGSSF  

IGSSR  

gfs  

–

–

100  

-100  

–

Gate–Body Leakage Current, Reverse  

(VDS = 0 V, VGS = -8 V)  

–

–

Forward Transconductance  

(VDS = 5.0 V, ID = 5 A)  

10  

15  

ON CHARACTERISTICS (Note 3)  

Gate Threshold Voltage  

Vdc  

VGS(th)  

RDS(on)  

(VDS = VGS, ID = 250μAdc)  

Static Drain–Source On–State Resistance  

(VGS = 10 V, ID =5.8 A)  

0.7  

–

1.4  

mΩ  

–

–

–

31  

34  

45  

38  

43  

62  

(VGS = 4.5 V, ID =5 A)  

(VGS = 2.5 V, ID = 4 A)  

DYNAMIC CHARACTERISTICS  

Input Capacitance  

pF  

pF  

pF  

Ciss  

Coss  

Crss  

(VGS = 0 V, f = 1.0MHz,VDS= 15 V)  

Output Capacitance  

–

–

–

513.51  

80.85  

54.87  

–

–

–

(VGS = 0 V, f = 1.0MHz,VDS= 15 V)  

Reverse Transfer Capacitance  

(VGS = 0 V, f = 1.0MHz,VDS= 15 V)  

SWITCHING CHARACTERISTICS  

Turn-On Delay Time  

ns  

td(on)  

tr  

–

–

–

–

7

15  

38  

3

14  

30  

76  

6

(VDD = 15V, RL = 2.7Ω  

ΙD = 1Α, VGEN = 10V,RG  

= 3Ω )  

Rise Time  

Turn-Off Delay Time  

Fall Time  

td(off)  

tf  

SOURCE–DRAIN DIODE CHARACTERISTICS  

Forward Voltage  

VSD  

V

(VGS = 0 Vdc, ISD = 1 Adc)  

–

–

1.2  

3.Pulse Test: Pulse Width

≤

300 μs, Duty Cycle

≤

2.0%.  

Leshan Radio Company, LTD.  

Rev.C Mar

 

2016  

2/5  

LN2306LT1G, S-LN2306LT1G  

30V N-Channel Enhancement-Mode MOSFET  

7

.

ELRCTRICAL CHARACTERISTICS CURVES  

20  

25  

20  

15  

10  

5

VDS=6V  

18  

VGS=2.5V  

16  

14  

12  

10  

150

℃  

VGS=2V  

8

6

25

℃  

4

2

0

-55

℃  

VGS=1.5V  

0

0

0.5  

1

1.5  

2

2.5  

0

2

4

6

VGS,Gate-to-Source Voltage(V)  

VDS,Drain-to-Source Voltage(V)  

ON-Region Characteristics  

Transfer Characteristics  

1.4  

1.2  

1

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

VGS=2V  

0.8  

0.6  

0.4  

0.2  

0

VGS=2.5V  

0

5

10  

15  

20  

-55  

-5  

45  

95  

145  

T,temperature(

℃

)  

ID,Drain Current(A)  

VGS(th) vs.

 

Temperature  

RDS(on) vs. ID  

Leshan Radio Company, LTD.  

Rev.C Mar

 

2016  

3/5  

LN2306LT1G, S-LN2306LT1G  

30V N-Channel Enhancement-Mode MOSFET  

7

.

ELRCTRICAL CHARACTERISTICS CURVES

（

Con.

）  

0.10  

0.09  

0.08  

0.07  

0.06  

0.05  

0.04  

0.03  

0.02  

0.01  

0.00  

2

2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9  

VGS,Gate-to -Source Voltage (V)  

3

RDS(on) vs.

 

VGS  

Leshan Radio Company, LTD.  

Rev.C Mar

 

2016  

4/5  

LN2306LT1G, S-LN2306LT1G  

30V N-Channel Enhancement-Mode MOSFET  

8.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM

 

MAX MIN NOM

 

MAX  

DIM  

A

0.89  

1

1.11 0.035 0.04 0.044  

0.1 0.001

 

0.002 0.004  

0.5 0.015

 

0.018 0.02  

A1 0.01  

0.06  

0.44  

b

c

0.37  

0.09  

2.80  

1.20  

1.78  

0.10  

0.13 0.18

 

0.003 0.005 0.007  

D

E

e

L

2.9  

1.3  

1.9  

0.2  

3.04 0.11

 

0.114 0.12  

1.4 0.047

 

0.051 0.055  

2.04 0.07

 

0.075 0.081  

0.3 0.004

 

0.008 0.012  

L1 0.35  

0.54 0.69

 

0.014 0.021 0.029  

H

E  

2.10  

0°  

2.4  

—  

2.64 0.083

 

0.094 0.104  

10° 0°

 

— 10°  

θ

9.SOLDERING FOOTPRINT  

Leshan Radio Company, LTD.  

Rev.C Mar

 

2016  

5/5