LRC-LN2604DT2AG
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LN2604DT2AG
60V N-Channel Enhancement MOSFET
1. FEATURES
●
VDS =
60 V
Ω
35m ,VGS@10V,IDS@5A
RDS(ON)
≤
40mΩ,VGS@4.5V,IDS@4A
RDS(ON)
≤
●
Low RDS(ON) trench technology
●
Low thermal impedance
D
D
G
D
D
S
●
Fast switching speed
●
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
2.APPLICATIONS
●
●
●
DC/DC Conversion
Power Routing
Motor Drives
3. ORDERING INFORMATION
Device
Marking
Shipping
LN2604DT2AG
04D
4000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Limits
60
Unit
V
Drain−to−Source Voltage
VDSS
VGS
Gate−to−Source Voltage
±20
V
10
A
A
A
valanche Current
IAS
5
valanche energy L=0.1mH
EAS
mJ
TA =25°C
TA =70°C
7
Continuous Drain Current(Note 1)
Pulsed Drain Current (Note 2)
Power Dissipation(Note 1)
ID
IDM
A
A
4
28
TA =25°C
TA =70°C
2
1.5
PD
W
ºC
Operating Junction and Storage Temperature Range
TJ , TSTG
−55 ~+150
5. THERMAL CHARACTERISTICS
Unit
Parameter
Junction−to−Ambient(Note 3)
Junction−to−Case
Symbol
Value
60
°
JA
R
q
C/W
°
JC
R
q
20
C/W
1.Surface mounted on “1.5 x 1.5” FR4 board using 1 sq in pad, 2 oz Cu.
2.Pulse width limited by maximum junction temperature.
Leshan Radio Company, LTD.
Rev.B Oct. 2020
1/6
LN2604DT2AG
60V N-Channel Enhancement MOSFET
6. ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Static
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μA)
V(BR)DSS
V
60
1
–
–
Gate-Source Threshold Voltage
(VDS = VGS , ID = 25
0
μ
A)
Gate-Body Leakage
VGS(th)
IGSS
V
1.9
–
3
–
uA
± 10
(VDS = 0 V, VGS = ±20 V)
Zero Gate Voltage Drain Current
IDSS
RDS(on)
VSD
–
–
µA
mΩ
V
1
(VDS = 48 V, VGS = 0 V)
Drain-Source On-Resistance(Note 3)
(VGS = 10 V, ID = 7 A)
–
–
23
32
35
40
(VGS = 4.5 V, ID = 5 A)
Diode Forward Voltage(Note 3)
–
0.78
1.5
(IS = 1.9 A, VGS = 0 V)
Dynamic(Note 4)
Qg
Qgs
Qgd
td(on)
tr
–
–
–
–
–
–
–
9
3.2
3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
–
–
(VDS = 15 V,
VGS = 4.5 V,
ID = 6 A)
nC
ns
–
–
–
–
–
6
(VDS = 15 V,
RL=1.4 Ω,ID =6
A,VGEN = 10 V,
RGEN = 6 Ω)
6
33
11
1280
65
53
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
–
–
–
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
–
–
–
(VDS = 15 V,
VGS = 0 V, f = 1
Mhz)
pF
–
Rg
–
Ω
0.74
(VDS=0V ,VGS=0V, f=1.0MHz)
3.Pulse test: PW
≤
300us duty cycle
≤
2%.
4.Guaranteed by design, not subject to production testing.
Leshan Radio Company, LTD.
Rev.B Oct. 2020
2/6
LN2604DT2AG
60V N-Channel Enhancement MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES
VGS=4V,6V,8V,10V
28
24
20
16
12
8
28
24
20
16
12
8
VGS=3.8V
VDS=10V
VGS=3.6V
VGS=3.4V
25
℃
VGS=3.2V
VGS=3.0V
150
℃
-55
℃
4
4
VGS=2.8V
VGS=2.6V
0
0
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS(V)
VDS(V)
ID vs. VDS
ID vs. VGS
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
50
5
0.5
VGS=4.5V
VGS=10V
150
℃
25
℃
-55
℃
0.05
0.005
2
4
6
8 10
12 14 16 18 20 22 24 26 28
ID(A)
0.0
0.2
0.4
0.6
VSD(V)
0.8
1.0
1.2
IS vs. VSD
RDS(on) vs. ID
Leshan Radio Company, LTD.
Rev.B Oct. 2020
3/6
LN2604DT2AG
60V N-Channel Enhancement MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.10
0.08
0.06
0.04
0.02
0.00
0.06
0.05
0.04
0.03
0.02
0.01
0
ID=7.0A
150
℃
25
℃
VGS=4.5V,ID=5.0A
VGS=10V,ID=7.0A
-55
℃
0
2
4
6
8
10
-50 -25
0
25 50 75
100 125 150
VGS(V)
Tj (
℃
)
RDS(on) vs. Tj
RDS(on) vs. VGS
1800
1600
1400
1200
1000
800
600
400
200
0
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
f=1.0MHz,
ID=250uA
Ciss
Ta=25
℃
Coss
Crss
-50 -25
0
25 50 75
100 125 150
0
10
20
30
40
50
60
Tj(
℃
)
VDS(V)
VGSth vs. Tj
Capacitance
Leshan Radio Company, LTD.
Rev.B Oct. 2020
4/6
LN2604DT2AG
60V N-Channel Enhancement MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
100
10us
10
100us
1
1ms
100ms
DC result
10ms
0.1
0.01
0.1
1
10
100
VDS(V)
Safe Operating Area
Leshan Radio Company, LTD.
Rev.B Oct. 2020
5/6
LN2604DT2AG
60V N-Channel Enhancement MOSFET
8.OUTLINE AND DIMENSIONS
DFN2020-6S
DIM
A
A1
b
D
E
MIN
0.60
0.01
0.25
1.95
1.95
NOR
0.65
0.03
0.30
2.00
MAX
0.70
0.05
0.35
2.05
2.05
2.00
e
L
L1
D1
E1
A3
0.65TYP.
0.28
0.23
0.60
0.90
1.10
0.33
0.65
1.00
1.20
0.65
0.95
1.15
0.152REF
All Dimensions in mm
9.SOLDERING FOOTPRINT
DFN2020-6S
Dim
X
X1
X2
e
(mm)
0.40
0.95
1.70
0.65
0.43
0.75
1.15
1.54
2.39
Y
Y1
Y2
Y3
Y4
Leshan Radio Company, LTD.
Rev.B Oct. 2020
6/6
DISCLAIMER
●
Before you use our Products, you are requested to carefully read this document and fully understand its
contents. LRC
shall not
be in any way responsible or
liable for failure,
malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
All information contained in this document is current as of the issuing date and subject to change without
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a
LRC sales representative.
●
