LRC-LN2670TZHG

Part #LRC-LN2670TZHG
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LRC-LN2670TZHG
LN2670T
Z
HG  
60V N-Channel Enhancement Mode MOSFET  
1
1. FEATURES  
2
●
Low RDS(on) trench technology.  
3
●
Low thermal impedance.  
SOT
89  
●
Fast switching speed.  

●

We declare that the material of product are Halogen Free and  
compliance with RoHS requirements.  
2 Drain  
2. APPLICATION  
●
Power Routing  
1 Gate  
●
DC/DC Conversion  
●
Motor Drives  
3 Source  
3. ORDERING INFORMATION  
Device  
Marking  
Shipping  
6N  
1000/Tape&Reel  
LN2670TZHG  
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)  
Parameter  
Limits  
60  
Unit  
V
Symbol  
VDSS  
VGS  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
±20  
4.6  
3.5  
18  
V
TA =25°C  
TA =70°C  
Continuous Drain Current  
ID  
A
IDM  
IAS  
A
A
Pulsed Drain Current (Note 1)  
Avalanche Current(L=0.1mH)  
Avalanche energy(L=0.1mH)  
12  
EAS  
7.2  
mJ  
by
maximum
j
unction tem
p
erature.  
1.
P
ul
s
e
w
idt
h
limited  
5. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Limits  
Unit  
Total Device Dissipation  
PD  
1.5  
W
Junction–to–Ambient(Note 2)  
Thermal Resistance,  
RΘJA  
85  
163  
35  
ºC/W  
Junction–to–Ambient(Note 3)  
Thermal Resistance,  
RΘJA  
ºC/W  
Thermal Resistance,  
Junction–to–Case  
RΘJC  
ºC/W  
Junction and
 
Storage temperature  
TJ,Tstg
−55
∼
+150  
º
C
2.Surface mounted on
“
1.5 x 1.5
”
FR4
b
oard using 1 s
q
in
p
ad, 2 o
z C
u.  
3
.Surface mounted on
“
3
0.0mm
×
25.0mm
×
1.6mm
”
FR4
,1 o
z Cu  
Rev.A Nov.
 
2020  
Leshan Radio Company, LTD.  
1/6  

LN2670T
Z
HG  
60V N-Channel Enhancement Mode MOSFET  
6. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)  
Min.  
Characteristic  
Symbol  
Typ.  
Max.  
Unit  
Static  
Drain–Source Breakdown Voltage  
(VGS = 0V, ID = 250μA)  
V(BR)DSS  
VGS(th)  
IGSS  
V
–
2
–
60  
1
–
–
3.2  
±100  
1
Gate-Source Threshold Voltage  
(VDS = VGS , ID = 250 uA)  
Gate-Body Leakage  
V
nA  
µA  
(VDS = 0 V, VGS = ±20 V)  
Zero Gate Voltage Drain Current  
(VDS = 48 V, VGS = 0 V)  
IDSS  
–
–
Drain-Source On-Resistance(Note 4)  
(VGS = 10 V, ID =3 A)  
RDS(on)  
–
–
–
–
mΩ  
70  
85  
(VGS = 5 V, ID = 2 A)  
Dynamic  
Qg  
Qgs  
Qgd  
td(on)  
tr  
14.6  
2
–
–
–
–
–
–
–
–
–
–
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
–
–
–
–
–
–
–
–
–
–
(VDS = 30 V,  
VGS = 10 V,  
ID = 3A)  
nC  
ns  
3.9  
10  
12  
20  
(VDS = 30V,  
ID=1A,VGS = 10V  
RG = 6 Ω)  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
15  
612  
40  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
(VDS = 30 V,  
VGS = 0 V, f = 1  
MHz)  
pF  
34  
Reverse Transfer Capacitance  
Gate Resistance  
Rg  
–
–
Ω
1.4  
(VDS=0V ,VGS=0V, f=1.0MHz)  
4.Pulse test: PW
≤
300us duty cycle
≤
2%.  
Rev.A Nov.
 
2020  
Leshan Radio Company, LTD.  
2/6  

LN2670T
Z
HG  
60V N-Channel Enhancement Mode MOSFET  
7
.
ELECTRICAL CHARACTERISTICS CURVES  
18  
16  
14  
12  
10  
8
18  
16  
14  
12  
10  
8
VGS=4V,6V,8V,10V  
VGS=3.8V  
VDS=10V  
VGS=3.6V  
25
℃
 
VGS=3.4V  
VGS=3.2V  
6
6
150
℃  
4
4
-55
℃  
2
2
VGS=3.0V  
4
0
0
0
1
2
3
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
VGS(V)  
VDS(V)  
ID vs. VDS  
ID vs. VGS  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
50  
5
VGS=5V  
150
℃  
25
℃  
-55
℃  
0.5  
VGS=10V  
0.05  
0.005  
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
VSD(V)  
1 2 3 4 5 6 7 8 9
 
101112131415161718  
ID(A)  
IS vs. VSD  
RDS(on) vs. ID  
Rev.A Nov.
 
2020  
Leshan Radio Company, LTD.  
3/6  

LN2670T
Z
HG  
60V N-Channel Enhancement Mode MOSFET  
7
.
ELECTRICAL CHARACTERISTICS CURVES
(Con.)  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
ID=3A  
VGS=5V,ID=2A  
150
℃  
25
℃  
VGS=10V,ID=3A  
-55
℃  
0
2
4
6
8
10  
-50 -25  
0
25 50 75
 
100 125 150  
VGS(V)  
Tj(
℃
)  
RDS(on) vs. Tj  
RDS(on) vs. VGS  
2.2  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1200  
1000  
800  
600  
400  
200  
0
f=1.0MHz,  
ID=250uA  
Ta=25
℃  
Ciss  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
-50 -25  
0
25 50 75
 
100 125 150  
Tj(
℃
)  
VDS(V)  
VGSth vs. Tj  
Capacitance  
Rev.A Nov.
 
2020  
Leshan Radio Company, LTD.  
4/6  

LN2670T
Z
HG  
60V N-Channel Enhancement Mode MOSFET  
7
.
ELECTRICAL CHARACTERISTICS CURVES
(Con.)  
100  
10us  
10  
100us  
1
100ms  
1ms  
10ms  
DC result  
0.1  
0.01  
PCB Size:  
30.0mm
×
25.0mm
×
1.6mm(FR4)  
0.1 10  
1
100  
VDS(V)  
Safe Operating Area  
Rev.A Nov.
 
2020  
Leshan Radio Company, LTD.  
5/6  

LN2670T
Z
HG  
60V N-Channel Enhancement Mode MOSFET  
8
.OUTLINE AND DIMENSIONS  
9
.SOLDERING FOOTPRINT  
Rev.A Nov.
 
2020  
Leshan Radio Company, LTD.  
6/6  

DISCLAIMER  
●
Before you use our Products, you are requested to carefully read this document and fully understand its  
contents. LRC
 
shall not
 
be in any way responsible or
 
liable for failure,
 
malfunction or accident arising  
from the use of any LRC’s Products against warning, caution or note contained in this document.  
All information contained in this document is current as of the issuing date and subject to change without  
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a  
LRC sales representative.  
●