LRC-LN3432LT1G

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LRC-LN3432LT1G
LN3432LT1G  
N-Channel 30-V (D-S) MOSFET  
3
1. FEATURES  
●
Low RDS(on) trench technology.  
1
●
Low thermal impedance.  
2
●
Fast switching speed.  
SOT– 23 (TO–236AB)  

●

We declare that the material of product are Halogen Free and  
compliance with RoHS requirements.  
3
D
2. APPLICATION  
●
Power Routing  
●
DC/DC Conversion  
●
Motor Drives  
G
1
S
2
3. ORDERING INFORMATION  
Device  
Marking  
Shipping  
LN3432LT1G  
M3C  
3000/Tape&Reel  
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)  
Parameter  
Symbol  
Limits  
Unit  
V
Drain−to−Source Voltage  
Gate−to−Source Voltage  
A
va
lanc
he Current  
VDSS  
VGS  
IAS  
30  
±20  
9
V
A
A
valanche energy L=0.1mH  
EAS  
mJ  
4
TC =25°C  
TC =70°C  
9
6
Continuous Drain Current  
ID  
6
A
TA =25°C (Note 1)  
TA =70°C (Note 1)  
4
IDM  
PD  
29  
2.9  
1.6  
1.4  
0.8  
Pulsed Drain Current (Note 2)  
Power Dissipation  
TC =25°C  
TC =70°C  
W
TA =25°C (Note 1)  
TA =70°C (Note 1)  
Operating Junction Temperature  
Storage Temperature Range  
TJ  
−55 ~+1
50  
−55 ~+1
50  
℃
Tstg  
1. 1-in ² 2oz Cu PCB board  
2.Pulse width limited by maximum junction temperature.  
5. THERMAL CHARACTERISTICS  
Parameter  
Limits  
90  
Unit  
Symbol  
RθJA  
t
≤
10s  
Maximum Junction-to-Ambient(Note 1)  
Steady State  
Steady State  
125  
45  
℃
/W  
RθJC  
Maximum Junction-to-Case  
Leshan Radio Company, LTD.  
1/5  
Rev.D Dec.
 
2020  

LN3432LT1G  
N-Channel 30-V (D-S) MOSFET  
6. ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Static  
Gate-Source Threshold Voltage  
(VDS = VGS , ID = 250 uA)  
Gate-Body Leakage  
VGS(th)  
IGSS  
1
–
1.5  
–
3
V
± 100  
nA  
(VDS = 0 V, VGS = ±20 V)  
Zero Gate Voltage Drain Current  
(VDS = 24 V, VGS = 0 V)  
–
–
µA  
IDSS  
1
Drain-Source On-Resistance(Note 3)  
(VGS = 10 V, ID = 6 A)  
RDS(on)  
–
–
mΩ  
22  
32  
28  
42  
(VGS = 4.5 V, ID = 5 A)  
Diode Forward Voltage(Note 3)  
(IS =0.5A, VGS = 0 V)  
Dynamic(Note 4)  
–
–
VSD  
1.3  
V
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
–
–
–
–
–
–
–
–
–
–
5.12  
1.32  
2.2  
511  
56  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
–
–
–
–
–
–
–
–
–
–
(VDS = 15 V,  
VGS = 4.5 V,ID =  
4 A)  
nC  
pF  
(VDS = 15 V,  
VGS = 0 V, f = 1  
Mhz)  
50.3  
24  
(VDS = 15 V, RL  
= 1.9 Ω,ID = 4  
A,VGEN = 10 V,  
RGEN = 6 Ω)  
34  
ns  
td(off)  
tf  
46  
Turn-Off Delay Time  
Fall Time  
44  
3.Pulse test: PW
≤
300µs duty cycle
≤
2%.  
4.Guaranteed by design, not subject to production testing.  
Leshan Radio Company, LTD.  
2/5  
Rev.D Dec.
 
2020  

LN3432LT1G  
N-Channel 30-V (D-S) MOSFET  
7
.
ELECTRICAL CHARACTERISTICS CURVES  
VGS=3V,3.5V,4V,4.5V,6V,8V,10V  
8
8
6
4
2
0
VGS=2.9V  
VDS=10V  
6
VGS=2.8V  
VGS=2.7V  
4
VGS=2.6V  
25
℃
 
VGS=2.5V  
VGS=2.4V  
2
150
℃  
-55
℃  
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
VGS(V)  
2.0  
2.5  
3.0  
VDS(V)  
ID vs. VGS  
ID vs. VDS  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
50  
5
VGS=3.5V  
VGS=4.0V  
150
℃  
25
℃  
-55
℃  
0.5  
0.05  
0.005  
VGS=4.5V,5V,5.5V,6V,8V,10V  
1
2
3
4
5
6
7
8
0.3  
0.4  
0.5  
0.6  
VSD(V)  
0.7  
0.8  
0.9  
1.0  
ID(A)  
IS vs. VSD  
RDS(on) vs. ID  
Leshan Radio Company, LTD.  
Rev.D Dec.
 
2020  
3/5  

LN3432LT1G  
N-Channel 30-V (D-S) MOSFET  
7
.
ELECTRICAL CHARACTERISTICS CURVES
(Con.)  
0.08  
0.06  
0.04  
0.02  
0.00  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
ID=6.0A  
150
℃  
25
℃  
VGS=4.5V,ID=5.0A  
VGS=10V,ID=6.0A  
-55
℃  
0
2
4
6
8
10  
-50 -25  
0
25 50 75
 
100 125 150  
VGS(V)  
Tj(
℃
)  
RDS(on) vs. Tj  
RDS(on) vs. VGS  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
ID=250uA  
-50 -25  
0
25  
50  
Tj(
℃
)  
75 100
 
125 150  
VGSth vs. Tj  
Leshan Radio Company, LTD.  
Rev.D Dec.
 
2020  
4/5  

LN3432LT1G  
N-Channel 30-V (D-S) MOSFET  
Notes:  
8.OUTLINE AND DIMENSIONS  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MILLIMETERS  
INCHES  
MIN NOM MAX
 
MIN NOM MAX  
DIM  
A
0.89  
1
1.11 0.035 0.04 0.044  
0.1 0.001
 
0.002 0.004  
0.5 0.015
 
0.018 0.02  
A1 0.01  
0.06  
0.44  
b
c
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.13 0.18
 
0.003 0.005 0.007  
D
E
e
L
2.9  
1.3  
1.9  
0.2  
3.04 0.11
 
0.114 0.12  
1.4 0.047
 
0.051 0.055  
2.04 0.07
 
0.075 0.081  
0.3 0.004
 
0.008 0.012  
L1 0.35  
0.54 0.69
 
0.014 0.021 0.029  
H

E  

2.10  
0°  
2.4  
—  
2.64 0.083
 
0.094 0.104  
10° 0°
 
— 10°  
θ
9.SOLDERING FOOTPRINT  
Rev.D Dec.
 
2020  
Leshan Radio Company, LTD.  
5/5  

DISCLAIMER  
●
Before you use our Products, you are requested to carefully read this document and fully understand its  
contents. LRC
 
shall not
 
be in any way responsible or
 
liable for failure,
 
malfunction or accident arising  
from the use of any LRC’s Products against warning, caution or note contained in this document.  
All information contained in this document is current as of the issuing date and subject to change without  
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a  
LRC sales representative.  
●