LRC-LN8320DT1AG
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LN8320DT1AG
N-Channel 30-V (D-S) MOSFET
1. FEATURES
●
Low RDS(on) trench technology.
●
Low thermal impedance.
●
Fast switching speed.
●
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
2. APPLICATION
●
Power Routing
●
DC/DC Conversion
●
Motor Drives
3. ORDERING INFORMATION
Device
Marking
Shipping
LN8320DT1AG
A20
3000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Limits
30
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
VDSS
VGS
±20
25
V
TA =25°C
TA =70°C
Continuous Drain Current(Note 1)
Pulsed Drain Current (Note 2)
ID
18
A
IDM
100
TA =25°C
TA =70°C
3.5
2
Power Dissipation(Note 1)
PD
W
Operating Junction Temperature
Storage Temperature Range
TJ
−55 ~+150
−55 ~+150
℃
Tstg
1.Surface Mounted on 1” x 1” FR4 Board.
2.Pulse width limited by maximum junction temperature.
5. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
35
Unit
℃
/W
t
≤
10s
Steady State
Maximum Junction-to-Ambient(Note 1)
RθJA
81
Leshan Radio Company, LTD.
Rev.A Mar. 2020
1/5
LN8320DT1AG
N-Channel 30-V (D-S) MOSFET
6. ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Static
Gate-Source Threshold Voltage
(VDS = VGS , ID = 250 uA)
Gate-Body Leakage
VGS(th)
V
1.0
–
1.3
–
2.1
n A
µA
± 100
IGSS
IDSS
(VDS = 0 V, VGS = ±20 V)
Zero Gate Voltage Drain Current
(VDS = 24 V, VGS = 0 V)
–
–
1
Drain-Source On-Resistance(Note 3)
(VGS = 10 V, ID = 12.8 A)
(VGS = 4.5 V, ID = 10.3 A)
RDS(on)
–
–
9.5
13
11
16
mΩ
Diode Forward Voltage(Note 3)
(IS = 2.3 A, VGS = 0 V)
–
–
–
VSD
1.2
–
V
Gate Resistance
(f=1MHz,VGS=0V)
Ω
Rg
2
Dynamic(Note 4)
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
–
–
–
–
–
–
–
–
–
–
10
3.5
4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
–
–
–
(VDS = 15 V,
VGS = 4.5 V,ID =
12.8 A)
nC
pF
1000
130
110
6
(VDS = 15 V,
VGS = 0 V, f = 1
Mhz)
(VDS = 15 V, RL
= 1.2 Ω,ID = 12.8
A,VGEN = 10 V,
RGEN = 6 Ω)
6
ns
td(off)
tf
28
8
Turn-Off Delay Time
Fall Time
3.Pulse test: PW
≤
300µs duty cycle
≤
2%.
4.Guaranteed by design, not subject to production testing.
Leshan Radio Company, LTD.
Rev.A Mar. 2020
2/5
LN8320DT1AG
N-Channel 30-V (D-S) MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES
14
14
12
10
8
VGS=2.8V,3V,5V,10V
VDS=10V
12
VGS=2.6V
10
8
-55
℃
25
℃
VGS=2.4V
6
6
4
4
150
℃
VGS=2.2V
VGS=2.0V
2
2
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS(V)
VGS(V)
ID vs. VDS
ID vs. VGS
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
50
5
0.5
VGS=4.5V
VGS=10V
150
℃
25
℃
-55
℃
0.05
0.005
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
12
14
ID(A)
VSD(V)
RDS(on) vs. ID
IS vs. VSD
Rev.A Mar. 2020
3/5
Leshan Radio Company, LTD.
LN8320DT1AG
N-Channel 30-V (D-S) MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.05
0.025
0.020
0.015
0.010
0.005
0.000
0.04
0.03
0.02
0.01
0
VGS=4.5V,ID=10.3A
150
℃
25
℃
VGS=10V,ID=12.8A
ID=12.8A
2
-55
℃
0
4
6
8
10
-50 -25
0
25
50
75 100
125 150
Tj(
℃
)
VGS(V)
RDS(on) vs. Tj
RDS(on) vs. VGS
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1us
10us
ID=250uA
100us
1ms
1
10ms
100ms
DC result
0.1
0.01
PCB
：
89.8mm*25.5mm*1.6mm(FR4)
；
0.1 10
-50 -25
0
25
50
75 100
125 150
1
100
Tj(
℃
)
VDS(V)
Safe Operating Area
VGSth vs. Tj
Rev.A Mar. 2020
4/5
Leshan Radio Company, LTD.
LN8320DT1AG
N-Channel 30-V (D-S) MOSFET
8.OUTLINE AND DIMENSIONS
DFN3030-8B
Dim Min
0.60
A1 0.00
0.30
Nor
0.65
Max
0.70
0.05
0.40
0.50
0.60
3.05
3.05
2.55
1.55
A
0.03
b
0.35
b1 0.40
b2 0.50
0.45
0.55
D
E
2.95
2.95
3.00
3.00
D1 2.45
E1 1.45
e
2.50
1.50
0.65BSC
0.50
L
0.45
0.55
0.54
0.67
L1 0.44
L2 0.57
A3
0.49
0.62
0.152REF.
All Dimensions in mm
9.SOLDERING FOOTPRINT
DFN3030-8B
Dim
C
C1
X
X1
X2
X3
Y1
Y2
(mm)
0.65
0.70
0.60
0.40
0.50
2.80
2.20
3.20
Leshan Radio Company, LTD.
Rev.A Mar. 2020
5/5
