LRC-LN8342DT1AG

LN8342DT1AG  

N-Channel 30-V (D-S) MOSFET  

1. FEATURES  

●

Low RDS(on) trench technology.  

●

Low thermal impedance.  

●

Fast switching speed.  

●

We declare that the material of product are Halogen Free and  

compliance with RoHS requirements.  

2. APPLICATION  

●

Power Routing  

●

DC/DC Conversion  

●

Motor Drives  

3. ORDERING INFORMATION  

Device  

Marking  

Shipping  

LN8342DT1AG  

A42  

3000/Tape&Reel  

4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)  

Parameter  

Symbol  

Limits  

30  

Unit  

V

Drain−to−Source Voltage  

Gate−to−Source Voltage  

VDSS  

VGS  

±20  

V

A

A

valanche Current  

IAS  

35  

61  

A

valanche energy L=0.1mH  

EAS  

mJ  

TA =25°C  

23  

TA =70°C  

TC =25°C  

17  

40  

Continuous Drain Current  

ID  

A

TC =70°C  

32  

160  

40  

IDM  

IS  

Pulsed Drain Current (Note 2)  

Continuous Source Current (Diode Conduction)(Note 3)  

TA =25°C  

A

3.5  

TA =70°C  

TC =25°C  

TC =70°C  

2

39  

PD  

W

Power Dissipation  

25  

TJ  

−55 ~+1

50  

−55 ~+1

50  

Operating Junction Temperature  

Storage Temperature Range  

℃

Tstg  

1.Surface Mounted on 1” x 1” FR4 Board.  

2.Pulse width limited by maximum junction temperature.  

3.Package limited  

5. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

RθJA  

Limits  

35  

Unit  

℃

/W  

t

≤

10s  

Maximum Junction-to-Ambient(Note 1)  

Steady State  

Steady State  

81  

Maximum Junction-to-Case  

RθJC  

3.2  

Leshan Radio Company, LTD.  

Rev.G Jul. 2019  

1/5  

LN8342DT1AG  

N-Channel 30-V (D-S) MOSFET  

6. ELECTRICAL CHARACTERISTICS  

Characteristic  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Static  

Drain–Source Breakdown Voltage  

(VGS = 0V, ID = 250μA)  

V

V(BR)DSS  

30  

1

–

–

–

–

Gate-Source Threshold Voltage  

(VDS = VGS , ID = 250 uA)  

Gate-Body Leakage  

VGS(th)  

IGSS  

V

–

µA  

–

(VDS = 0 V, VGS = ±20 V)  

Zero Gate Voltage Drain Current  

(VDS = 24 V, VGS = 0 V)  

(VDS = 24 V, VGS = 0 V, TJ = 55°C)  

On-State Drain Current(Note 4)  

(VDS = 5 V, VGS = 10 V)  

Drain-Source On-Resistance(Note 4)  

(VGS = 10 V, ID = 20 A)  

±10  

IDSS  

ID(on)  

–

–

–

–

µA  

A

1

5

30  

–

–

RDS(on)  

–

–

–

–

4.8  

6.8  

(VGS = 4.5 V, ID = 16 A)  

Forward Transconductance(Note 4)  

(VDS = 15 V, ID = 20 A)  

gfs  

S

V

–

–

25  

–

–

Diode Forward Voltage(Note 4)  

(IS = 2.5 A, VGS = 0 V)  

VSD  

1.1  

Dynamic  

Qg  

Qgs  

Qgd  

Ciss  

Coss  

Crss  

td(on)  

tr  

–

–

–

–

–

–

–

–

–

–

32  

13  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Rise Time  

–

–

–

–

–

–

–

–

–

–

(VDS = 15 V,  

VGS = 4.5 V,ID =  

20A)  

nC  

pF  

13  

4153  

301  

283  

13  

(VDS = 30 V,  

VGS = 0 V, f =  

1MHz)  

(VDS=15 V,  

RL=0.8 Ω,ID=20  

A,VGEN=10  

15  

ns  

td(off)  

tf  

75  

Turn-Off Delay Time  

V,RGEN=6 Ω)  

25  

Fall Time  

Gate Resistance  

(VDS=0V ,VGS=0V, f=1.0MHz)  

Rg  

Ω

0.6  

–

–

4.Pulse test: PW

≤

300µs duty cycle

≤

2%.  

5.Guaranteed by design, not subject to production testing.  

Leshan Radio Company, LTD.  

2/5  

Rev.G Jul. 2019  

LN8342DT1AG  

N-Channel 30-V (D-S) MOSFET  

7

.

ELECTRICAL CHARACTERISTICS CURVES  

20  

18  

16  

14  

12  

10  

8

16  

VDS=10V  

VGS=2.8V,3V,4V,5V,6V  

14  

12  

VGS=2.6V  

10  

25

℃

 

8

6

4

2

0

VGS=2.4V  

Ta=25

℃

 

150

℃  

-55

℃  

6

4

VGS=2.2V  

VGS=2V  

2

0

0

1

2

3

0

1

2

3

4

5

VGS Gate to Source Voltage(V)  

VDS,Drain To Source Voltage(V)  

ID vs. VDS  

ID vs. VGS  

100  

10  

0.010  

0.008  

0.006  

0.004  

0.002  

0.000  

Ta=25

℃  

VGS=4.5V  

VGS=10V  

1

150

℃  

25

℃  

-55

℃  

0.1  

0.01  

0.2  

0.4  

0.6  

0.8  

1

2

7

12  

17  

VSD,Diode Forward Voltage(V)  

ID,Drain Current(A)  

RDS(on) vs. ID  

IS vs. VSD  

Leshan Radio Company, LTD.  

3/5  

Rev.G Jul. 2019  

LN8342DT1AG  

N-Channel 30-V (D-S) MOSFET  

7

.

ELECTRICAL CHARACTERISTICS CURVES(Con.)  

0.010  

0.008  

0.006  

0.004  

0.002  

0.000  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

ID=250uA  

VGS=4.5V,ID=16  

A

VGS=10V,ID=20A  

-50 -25  

0

25 50 75

 

100 125 150  

-50 -25  

0

25 50 75

 

100 125 150  

Tj,Temperature(

℃

)  

Tj Temperature(

℃

)  

RDS(on) vs. Tj  

VGSTH vs. Tj  

6000  

5000  

4000  

3000  

2000  

1000  

0

f=1.0MHz  

Ta=25

℃  

Ciss  

Coss  

Crss  

0

10  

20  

30  

VDS Drain to Source Voltage(V)  

Capacitance  

Leshan Radio Company, LTD.  

4/5  

Rev.G Jul. 2019  

LN8342DT1AG  

N-Channel 30-V (D-S) MOSFET  

8.OUTLINE AND DIMENSIONS  

D1  

D

e

DFN3030-8B  

Dim Min  

0.60  

A1 0.00  

0.30  

Nor  

0.65  

Max  

0.70  

0.05  

0.40  

0.50  

0.60  

3.05  

3.05  

2.55  

1.55  

A

0.03  

b

0.35  

C0.2  

b1 0.40  

b2 0.50  

0.45  

0.55  

D

E

2.95  

2.95  

3.00  

3.00  

b

b1  

b2  

D1 2.45  

E1 1.45  

e

2.50  

TOP VIEW  

BOTTOM VIEW  

1.50  

0.65BSC  

0.50  

L

0.45  

0.55  

0.54  

0.67  

L1 0.44  

L2 0.57  

A3  

0.49  

0.62  

0.152REF.  

SIDE VIEW  

All Dimensions in mm  

9.SOLDERING FOOTPRINT  

X3  

DFN3030-8B  

Dim  

(mm)  

C

0.65  

0.70  

0.60  

0.40  

0.50  

2.80  

2.20  

3.20  

0.82  

C1  

X

X1  

X2  

X3  

Y1  

Y2  

Y

C1  

C

C

X

X1 X2 X1  

Leshan Radio Company, LTD.  

5/5  

Rev.G Jul. 2019