LRC-LNTA4001NT1G
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LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G
S-LNTA4001NT1G
Small Signal MOSFET
20
V
,
2
38 mA, Single, N-Channel, Gate
ESD Protection
Features
•
ꢀLow Gate Charge for Fast Switching
•
ꢀSmall 1.6 x 1.6 mm Footprint
•
ꢀESD Protected Gate
•
ꢀPb-Free Package is Available
SC-89
•
ESD Protected:2000V
ESD Protected:1500V
•
S- Prefix for Automotive and Other Applications Requiring
ESD Protected:1500V
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
V
R
DS(on)
Typ @ V
I MAX
D
(Note 1)
(BR)DSS
GS
•
ꢀPower Management Load Switch
•
ꢀLevel Shift
•
ꢀPortable Applications such as Cell Phones, Media Players,
Digital Cameras, PD
A
‘s, Video Games, Hand Held Computers, etc.
1.5
W
@ 4.5 V
2.2
W
@ 2.5 V
20 V
238 mA
PIN CONNECTIONS
SC-89 (3-Leads)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Symbol Value
Unit
V
DSS
20
10
V
V
Gate
1
Gate-to-Source V
oltage
V
GS
Continuous Drain
Steady State = 25
°
C
Steady State = 25
°
C
I
238
mA
D
3
Drain
Power Dissipation
(Note 1)
P
300
mW
D
Source
2
Pulsed Drain Current
I
714
mA
t
P
v
10
m
s
DM
(
T
o
p View)
Operating Junction and Storage
T
e
mperature
T ,
J
-55 to
150
°
C
T
STG
MARKING DIAGRAM
3
Continuous Source Current (Body Diode)
I
238
260
mA
SD
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
°
C
L
TF
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
TF =
Specific Device Code
= Month Code
M
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
ORDERING INFORMATION
Junction-to-Ambient – Steady State (Note 1)
R
q
416
°
C/W
JA
Device
Package
Shipping
1. Surface-mounted
on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
LNTA4001NT1G
S-LNTA4001NT1G
SC-89
3000
T
a
pe & Reel
10000
T
a
pe & Reel
LNTA4001NT3G
S-LNTA4001NT3G
SC-89
Rev .O
1/5
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
V
= 0
V
, I
=
1
00
m
A
D
20
V
(BR)DSS
GS
I
V
= 0
V
, V
=
2
0 V
DS
1.0
m
A
m
A
DSS
GS
I
V
= 0
V
, V
=
GS
10 V
100
GSS
DS
V
0.5
1.0
1.5
2.2
50
1.5
3.0
3.5
V
V
= 3
V
, I
=
1
00
m
A
D
GS(TH)
DS
GS
GS
Drain-to-Source On Resistance
R
DS(on)
V
V
= 4.5
V
, I
=
1
0 mA
D
W
= 2.5
V
, I
=
1
0 mA
D
Forward Transconductance
CAPACITANCES
g
FS
V
= 3
V
, I
=
1
0 mA
D
mS
DS
Input Capacitance
C
11.5
10
20
15
ISS
V
= 5
V
, f = 1
M
Hz,
V
DS
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn-On Delay Time
Rise Time
C
pF
OSS
RSS
= 0 V
GS
C
3.5
6.0
t
13
15
98
60
ns
ns
d(ON)
t
r
V
GS
= 4.5
V
, V
= 5 V,
DS
= 10 mA, R
= 10
W
G
I
D
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0
V
, I
=
1
0 mA
S
0.66
0.8
V
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching
characteristics are independent of operating junction temperatures.
Rev .O
2/5
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
TYPICAL PERFORMANCE CURVES
0.2
0.18
0.16
0.14
0.12
0.1
0.2
0.16
0.12
0.08
0.04
V
V
= 10 V
VDS = 5 V
GS
V =
2 V
GS
V
= 5 V
GS
= 2.8 V
= 2.4 V
.
GS
T =
25
°
C
J
V
GS
0.08
0.06
0.04
0.02
0
T =
125
°
C
J
T =
25
°
C
J
V
GS
= 1.4 V
V
GS
= 1.2 V
1.2
T =
-55
°
C
J
0
0.6
0
0.4
0.8
1.6
2
0.8
1
1.2
1.4
1.6
1.8
2
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-region Characteristics
Figure 2. Transfer Characteristics
2.5
2
2.5
2
T =
25
°
C
J
V
GS
= 4.5 V
T =
125
°
C
J
V
= 2.5 V
GS
1.5
1
1.5
1
V
GS
= 4.5 V
T =
25
°
C
J
T =
-55
°
C
J
0.5
0.5
0
0.05
0.1
0.15
0.2
0
0.05
0.1
0.15
0.2
I ,
DRAIN CURRENT (A)
D
I ,
DRAIN CURRENT (A)
D
Figure 3. On-resistance versus Drain Current
and Temperature
Figure 4. On-resistance versus Drain Current
and Gate Voltage
2
1.8
1.6
1.4
1.2
1
1000
100
10
I
= 0.01 A
V
GS
= 0 V
D
V
= 4.5 V
GS
T =
150
°
C
J
T =
125
°
C
J
0.8
0.6
0.4
0.2
0
1
0
5
10
15
20
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
Rev .O
3/5
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
TYPICAL PERFORMANCE CURVES
25
20
15
10
5
1000
100
Ciss
Crss
T =
25
°
C
V
= 5 V
DD
J
I
= 10 mA
= 4.5 V
D
V
GS
t
d(off)
t
f
Ciss
t
r
t
10
1
d(on)
Coss
Crss
V
= 0 V
5
VDS = 0 V
GS
0
10
5
0
10
15
20
1
10
100
VDS
V
GS
R ,
GATE RESISTANCE (
W
)
G
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (V)
Figure 8. Resistive Switching Time Variation
versus Gate Resistance
Figure 7. Capacitance Variation
0.1
V
GS
= 0 V
T =
25
°
C
J
0.08
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
V
, SOURCE-TO-DRAIN VOLTAGE (V)
SD
Figure 9. Diode Forward Voltage
versus Current
Rev .O
4/5
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev .O
5/5
