LRC-LNTK3043PT5G
| Part # | LRC-LNTK3043PT5G |
Download  | LRC-LNTK3043PT5G |
LESHAN RADIO COMPANY, LTD.
Power MOSFET
20
V
,
2
85 mA, P−Channel with ESD
Protection, SOT−723
LNTK3043PT5G
Features
S-LNTK3043PT5G
•
Enables High Density PCB Manufacturing
•
44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
•
Low
V
o
ltage Drive Makes this Device Ideal for Portable Equipment
V
R
DS(on)
TYP
I Max
D
(BR)DSS
1.5
W
@ 4.5 V
•
Low Threshold Levels, V
< 1.3 V
GS(TH)
•
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
2.4
W
@ 2.5 V
5.1
W
@ 1.8 V
6.8
W
@ 1.65 V
285 mA
20 V
•
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
•
These are Pb−Free Devices
T
o
p View
3
•
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
Applications
•
Interfacing, Switching
•
High Speed Switching
•
Cellular Phones, PDAs
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
20
Unit
V
1
2
V
DSS
1 − Gate
2 − Source
3 − Drain
Gate−to−Source V
oltage
V
10
V
GS
Continuous Drain
Current (Note 1)
Steady T
= 25
°
C
255
185
285
440
A
State
T =
85
°
C
A
I
mA
D
t
v
5 s
T =
25
°
C
A
MARKING
DIAGRAM
Power Dissipation
(Note 1)
Steady
State
T =
25
°
C
A
P
mW
D
D
t
v
5 s
545
210
155
310
KB
1
Continuous Drain
Current (Note 2)
T =
25
°
C
A
I
D
SOT−723
CASE 631AA
mA
Steady
State
A
Power Dissipation
(Note 2)
T =
25
°
C
A
P
mW
KB =
Device Code
= Date Code
M
Pulsed Drain Current
I
400
mA
t =
10
m
s
p
DM
Operating Junction and Storage
T
e
mperature
T , T
−55 to
150
°
C
J
STG
ORDERING INFORMATION
Source Current (Body Diode) (Note 2)
I
286
260
mA
S
†
Device
Package
Shipping
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 seconds)
°
C
LNTK3043PT5G
S-LNTK3043PT5G
T
L
SOT−723* 8000
/
T
a
pe & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted
on FR4 board using 1 in sq pad size
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted
on FR4 board using the minimum recommended pad size.
Rev .O
1/5
LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
280
228
400
Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
R
q
JA
q
JA
q
JA
°
C/W
R
R
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
3. Surface−mounted
on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
= 0 V, I
= 100
m
A
V
(BR)DSS
20
V
GS
D
Drain−to−Source Breakdown Voltage
T
e
mperature Coefficient
I
D
= 100
m
A, Reference to 25
°
C
V
/T
(BR)DSS J
27
mV/
°
C
Zero Gate Voltage Drain Current
V
V
= 0 V,
= 16 V
T =
25
°
C
I
1
10
1
GS
DS
J
DSS
m
A
m
A
T =
125
°
C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
= 0 V, V
=
5 V
I
GSS
DS
GS
V
0.4
1.3
V
GS(TH)
V
= V
, I
= 250
m
A
DS D
GS
Gate Threshold
T
e
mperature Coefficient
Drain−to−Source On Resistance
V
/T
−2.4
1.5
mV/
°
C
GS(TH)
J
R
V
= 4.5V, I
= 10 mA
3.4
3.8
4.5
10
GS
D
DS(ON)
V
= 4.5V, I
= 255 mA
1.6
GS
D
V
= 2.5 V, I
= 1 mA
2.4
W
GS
D
V
= 1.8 V, I
= 1 mA
5.1
GS
D
V
= 1.65 V, I
= 1 mA
6.8
15
GS
D
Forward Transconductance
V
= 5 V, I
= 100 mA
g
0.275
S
DS
D
FS
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
11
8.3
2.7
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V
= 10 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
C
SWITCHING CHARACTERISTICS, VGS= 4.5 V
(Note 4)
Turn−On Delay Time
Rise Time
t
13
15
94
55
d(ON)
t
r
V
= 4.5 V, V
= 5 V, I
= 10 mA,
DD D
GS
ns
V
R
G
= 6
W
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
J
0.83
0.69
9.1
1.2
SD
RR
V
= 0 V, I
= 286 mA
S
GS
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
t
7.1
ns
a
V
= 0 V, V
= 20 V, dISD/dt = 100 A/
m
s,
DD
GS
I
S
= 286 mA
Discharge Time
t
2.0
b
Reverse Recovery Charge
Q
RR
3.7
nC
5. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%
6. Switching
characteristics are independent of operating junction temperatures
Rev .O
2/5
LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
TYPICAL PERFORMANCE CURVES
0.3
0.2
0.3
V
≥
5 V
DS
2.5 V
2.2 V
V
= 3 V to 10 V
GS
T =
25
°
C
J
0.2
2.0 V
1.8 V
0.1
0
0.1
0
T =
125
°
C
J
T =
25
°
C
J
1.6 V
1.4 V
T =
−55
°
C
J
0
1
2
3
4
5
1
1.5
2
2.5
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
5
I
= 0.255 A
T =
25
°
C
J
D
T =
25
°
C
J
4
3
2
1
0
V
= 2.5 V
GS
V
= 4.5 V
GS
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
I
DRAIN CURRENT (AMPS)
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
D,
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1000
100
V
= 0 V
GS
V
= 1.65 V, I
= 1 mA
D
GS
T =
150
°
C
V
= 1.8 V, I
= 10 mA
D
J
GS
T =
125
°
C
J
V
= 2.5 V, I
= 10 mA
D
GS
10
1
V
= 4.5 V, I
= 10 mA
D
GS
1.0
0
−50 −25
0
25
50
75
100 125
150
5
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
15
20
T , JUNCTION TEMPERATURE (
°
C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O
3/5
LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
TYPICAL PERFORMANCE CURVES
25
20
1000
100
10
T =
25
°
C
J
V
= 5 V
= 10 mA
= 4.5 V
C
DD
iss
I
D
V
GS
C
rss
t
d(off)
15
10
5
t
f
C
iss
t
r
t
d(on)
C
oss
V
= 0 V
V
= 0 V
5
C
rss
DS
GS
0
10
1
1
10
R ,
GATE RESISTANCE (OHMS)
100
5
0
10
15
20
G
V
V
DS
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
0.4
V
= 0 V
GS
T =
25
°
C
J
0.3
0.2
0.1
0
T =
150
°
C
J
T =
125
°
C
J
T =
−55
°
C
J
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Diode Forward Voltage vs. Current
Rev .O
4/5
LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
PACKAGE DIMENSIONS
SOT−723
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
E
D
A
b1
−Y−
3
H
E
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
L
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27 0.0059
0.0083 0.0106
0.37 0.010
0.012 0.015
0.17 0.0028
0.0047 0.0067
MIN
A
b
b1
C
D
E
e
H
E
L
0.45
0.15
0.25
0.07
1.15
0.75
b
2X
C
e
0.08 (0.0032)
X Y
1.20
0.80
1.25
0.85
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059
0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
Rev .O
5/5
