LRC-LP2305LT1G

Part #	LRC-LP2305LT1G
Download	LRC-LP2305LT1G

LESHAN RADIO COMPAN

Y

,

L

TD.

30V P-Channel Enhancement-Mode MOSFET

●

APPLICATIONS

1) Advanced trench process technology

2) High Density Cell Design For Ultra Low On-Resistance

LP2305LT1G

3) We declare that the material of product are Halogen Free

and compliance with RoHS requirements.

3

1

2

●

FEATURES

SOT– 23 (TO–236AB)

1) V

DS

= -30V

2) R

DS(ON)

, Vgs@-10V, Ids@-4.2A = 70m

3) R

DS(ON)

, Vgs@-4.5V, Ids@-4.0A = 85 m

4) R

DS(ON)

, Vgs@-2.5V, Ids@-1.0A = 130m

Ω

3

Ω

D

Ω

G

1

●

DEVICE MARKING AND ORDERING INFORMATION

S

2

Device

LP2305LT1G

LP2305LT3G

Marking

P05

Shipping

3000/Tape&Reel

10000/Tape&Reel

P05

●

MAXIMUM RATINGS(Ta = 25

℃

)

Parameter

Symbol

V

DSS

V

GS

I

D

I

DM

P

D

Limits

-30

±12

-4.2

-30

Unit

V

V

A

A

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Current

Pulsed Drain Current(Note1)

Total Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance-Junction to

Ambient(Note2)

W

1.4

T

J

, Tstg

–55 to +150

°C

R

θJA

140

°C/W

1. Repetitive Rating: Pulse width limited by the Maximum junction temperationr

2. 1-in

2

2oz Cu PCB board

May,2015

Rev.C 1/4

LESHAN RADIO COMPAN

Y

,

L

TD.

LP2305LT1G

●

ELECTRICAL CHARACTERISTICS (Ta= 25

℃

)

STATIC

Parameter

Symbol

Min.

Typ.

Max. Unit

Conditions

Drain−to−Source Breakdown

Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

V

(BR)DSS

V

GS(TH)

I

DSS

-30

-0.7

–

–

–

–

–

-1.3

-1

V

V

V

GS

= 0 V, I

D

= -250 μA

V

GS

= V

DS

, I

D

=- 250 μA

μA

V

DS

=-24V, V

GS

=0V

I

GSS

–

–

±100

nA

V

DS

= 0 V, V

GS

= ±12 V

–

–

–

53

64

86

–

70

85

130

-1

m

m

m

V

S

Ω

Ω

Ω

V

GS

= -10V, I

D

=-4.2 A

V

GS

= -4.5 V, I

D

=-4 A

V

GS

= -2.5 V, I

D

= -1 A

V

GS

= 0 V, I

SD

= -1A

V

DS

= -5.0 V, I

D

= -5 A

Drain−to−Source On

Resistance(Note3)

R

DS(on)

Forward Diode Voltage

Forward Transconductance

V

SD

g

FS

7

11

–

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate−to−Source Gate Charge

Gate−to−Drain Charge

Turn−On Delay Time

Rise Time

Ciss

Coss

Crss

Q

G

–

–

–

–

–

–

–

–

–

–

826.18

90.74

53.18

6.36

–

–

–

–

–

–

–

–

–

–

p

F

n

C

V

GS

= 0 V, f = 1.0 MHz,

V

DS

= -15 V

Q

GS

Q

GD

t

d(on)

t

r

1.79

V

GS

=-15 V,V

DS

= -4.5V

I

D

= -4A

1.42

11.36

2.32

Ω

V

DD

= -15V, R

L

=3.6

ns

Ι

D

= −1Α, V

GEN

= -10V

R

G

= 6

Turn−Off Delay Time

Fall Time

t

d(off)

t

f

34.88

3.52

Ω

3. Pulse Test: Pulse width

≤

300μs, duty cycle

≤

2%.

May,2015

Rev.C 2/4

LESHAN RADIO COMPAN

Y

,

L

TD.

LP2305LT1G

ELECTRICAL CHARACTERISTIC CURVES

3

2.5

2

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

VDS=5V

1.5

1

0.5

0

0

0.2

0.4

0.6

0.8

1

VDS, Drain-to-Source Voltage (V)

0

0.5

1

1.5

2

2.5

VGS, Gate-to-Source Voltage (V)

VGS=1.6V

VGS=2.1V

VGS=2.6V

FIG.1 Transfer Characteristics

FIG.2 On-Region Characteristics

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

ID, Drain Current (A)

SN1 VGS=1.6V

SN1 VGS=2.1V

SN1 VGS=2.6V

FIG.3 On-Resistance Versus Drain Current

May,2015

Rev.C 3/4

LESHAN RADIO COMPAN

Y

,

L

TD.

LP2305LT1G

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M,1982

A

L

2. CONTROLLING DIMENSION: INCH.

3

INCHES

MAX

MILLIMETERS

DIM

S

B

MIN

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

1

2

A

B

C

D

G

H

J

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

V

G

C

K

L

H

J

D

K

S

V

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

mm

May,2015

Rev.C 4/4