LRC-LP2371LT1G
| Part # | LRC-LP2371LT1G |
Download  | LRC-LP2371LT1G |
LP2371LT1G
S-LP2371LT1G
P-Channel 100-V (D-S) MOSFET
SOT23(TO-236)
1. FEATURES
●
RDS(ON)
≤
1.4Ω, Vgs@-10V
●
RDS(ON)
≤
1.5Ω, Vgs@-4.5V
●
Fast switching speed
●
Low RDS(on) trench technology
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. APPLICATIONS
●
PoE Power Sourcing Equipment
●
PoE Powered Devices
●
Telecom DC/DC converters
●
White LED boost converters
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
E9
LP2371LT1G
LP2371LT3G
3000/Tape&Reel
10000/Tape&Reel
E9
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Limits
-100
±20
Symbol
Unit
V
Drain–Source Voltage
VDSS
VGS
Gate–to–Source Voltage – Continuous
V
-1
Ta=25
℃
Ta=70
℃
Continuous Drain Current(Note 1)
Pulsed Drain Current(Note 2)
Power Dissipation(Note 1)
ID
-0.8
A
-2.6
IDM
PD
1.3
Ta=25
℃
Ta=70
℃
W
0.8
Tj
150
Junction Temperature
℃
℃
Tstg
-55~+150
Storage Temperature Range
100
166
t
≤
10s
Steady State
Thermal Resistance-Junction to Ambient(Note 1)
RθJA
℃
/W
1.Surface mounted on
“
1.5 x 1.5
”
FR4
b
oard using 1 s
q
in
p
ad, 2 o
z C
u.
2.Pulse width limited by maximum junction temperature.
Leshan Radio Company, LTD.
Rev.B Dec.
2020
1/6
LP2371LT1G, S-LP2371LT1G
P-Channel 100-V (D-S) MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
STATIC
Drain–Source Breakdown Voltage
(VGS = 0, ID = -250μA)
-100
-1
–
–
–
–
VBRDSS
VGS(th)
IGSS
V
V
Gate Threshold Voltage
-3.5
±100
(VDS = VGS, ID = -250μA)
Gate Leakage Current
–
nA
(VDS =0V, VGS =±20V)
Zero Gate Voltage Drain Current
(VGS = 0V, VDS = -80 V)
(VGS = 0V, VDS = -80 V,TJ = 55°C)
Static Drain–Source On–State Resistance(
N
ote 3)
(VGS = -10 V, ID = -1 A)
μA
IDSS
–
–
–
–
-1
-25
RDS(on)
VSD
Ω
–
–
–
–
1.4
1.5
(VGS = -4.5 V, ID = -0.9 A)
Diode Forward Voltage
V
–
-0.81
-1.3
(VGS = 0 V, IS = -0.8 A)
DYNAMIC
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
–
–
–
–
–
–
–
–
–
–
–
–
4
(VGS = -4.5 V, ID =-1A,VDS= -50 V)
Gate-Source Charge
1.6
nC
(VGS = -4.5 V, ID =-1A,VDS= -50 V)
Gate-Drain Charge
1.2
(VGS = -4.5 V, ID =-1A,VDS= -50 V)
Input Capacitance
472
18.6
14.4
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Output Capacitance
pF
ns
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Reverse Transfer Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Turn-On Delay Time
td(on)
tr
–
–
–
–
3.6
1.1
–
–
–
–
(VDD = -50V, RL= 50Ω
ID = -1A, VGEN = -10V
Rise Time
Turn-Off Delay Time
td(off)
tf
19.9
1.9
RG = 6.2Ω)
Fall Time
3.Pulse Test: Pulse Width
≤
300 μs, Duty Cycle
≤
2.0%.
Leshan Radio Company, LTD.
Rev.B Dec.
2020
2/6
LP2371LT1G, S-LP2371LT1G
P-Channel 100-V (D-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS=3.5V,4V,10V
VDS=10V
2.5
2.0
1.5
1.0
0.5
0.0
VGS=3.0V
150
℃
25
℃
VGS=2.5V
-55
℃
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS(V)
VGS(V)
ID vs. VGS
ID vs. VDS
20
2
2.0
1.6
1.2
0.8
0.4
0.0
ID=1.0A
150
℃
25
℃
150
℃
-55
℃
0.2
25
℃
0.02
-55
℃
0.002
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
VGS(V)
VSD(V)
RDSON vs. VGS
IS vs. VSD
Leshan Radio Company, LTD.
Rev.B Dec.
2020
3/6
LP2371LT1G, S-LP2371LT1G
P-Channel 100-V (D-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
1.2
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
ID=250uA
1.0
0.8
0.6
0.4
0.2
0.0
VGS=4.5V,ID=0.9A
VGS=10V,ID=1.0A
-50 -25
0
25
50
Tj(
℃
)
75 100
125 150
-50 -25
0
25
50
75 100
125 150
Tj(
℃
)
VGSTH vs. Tj
RDSON vs. TJ
0.9
0.8
0.7
0.6
0.5
600
500
400
300
200
100
0
f=1.0MHz
Ta=25
℃
Ciss
VGS=3.5V
VGS=4V
VGS=6V
Coss
Crss
VGS=10V
2.5 3.0
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
VDS(V)
ID(A)
RDSON vs. ID
Capacitance
Leshan Radio Company, LTD.
Rev.B Dec.
2020
4/6
LP2371LT1G, S-LP2371LT1G
P-Channel 100-V (D-S) MOSFET
6
.
ELECTRICAL CHARACTERISTICS CURVES
(Con.)
10
10us
100us
1
1ms
0.1
0.01
10ms
DC result
100ms
PCB Size:
30.0mm
×
25.0mm
×
1.6mm(FR4)
0.001
0.1
1
10
VDS(V)
100
1000
Safe Operating Area
10
1
0.1
50%
25%
10%
5%
P(pk)
1%
0.01
0.001
t
1
t
2
0.1%
1.Duty Cycle, D = t
1
/ t
2
C /W
°
= 208.7
2.R
θ
JA
3.T
J
-T
A
=P*
R
θ
JA
(t)
(t)=r(t)*
Single Pulse
0.0001
4.
R
θ
JA
R
θ
JA
30.0mm
×
25.0mm
×
1.6mm(FR4)
10 100
1000
0.00001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse time (s)
Thermal Response
Leshan Radio Company, LTD.
Rev.B Dec.
2020
5/6
LP2371LT1G, S-LP2371LT1G
P-Channel 100-V (D-S) MOSFET
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM
MAX MIN NOM
MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001
0.002 0.004
0.5 0.015
0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18
0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11
0.114 0.12
1.4 0.047
0.051 0.055
2.04 0.07
0.075 0.081
0.3 0.004
0.008 0.012
L1 0.35
0.54 0.69
0.014 0.021 0.029
H
E
2.10
0°
2.4
—
2.64 0.083
0.094 0.104
10° 0°
— 10°
θ
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.B Dec.
2020
6/6
DISCLAIMER
●
Before you use our Products, you are requested to carefully read this document and fully understand its
contents. LRC
shall not
be in any way responsible or
liable for failure,
malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
All information contained in this document is current as of the issuing date and subject to change without
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a
LRC sales representative.
●
