LRC-LP3218DT1G
| Part # | LRC-LP3218DT1G |
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LP3218DT1G
12V P-Channel Enhancement MOSFET
1. FEATURES
●
Low Profile DFN 2.0×2.0x0.62 mm for Board Space Saving
●
Ultra Low RDS(on)
●
ESD Diode.Protected Gate
●
This is a Pb-Free Device
●
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
2.APPLICATIONS
●
Battery Switch
●
High Side Load Switch
3. ORDERING INFORMATION
Device
Marking
Shipping
LP3218DT1G
32
4000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Symbol
VDSS
VGS
ID
Limits
12
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
±8
V
Drain Current (Note 1)Steady State
Pulsed Drain Current (tp = 10 µs)
Power Dissipation (Note 1)
8.2
A
IDM
25
A
Steady State
PD
1.7
W
t < 7 s
3.8
Operating Junction and Storage
−55 ~
+150
TJ , TSTG
TL
ºC
ºC
V
Temperature Range
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
260
Gate−Source ESD Rating
(HBM, Method 3015)
ESD
2000
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Leshan Radio Company, LTD.
Rev.B May. 2017
1/6
LP3218DT1G
12V P-Channel Enhancement MOSFET
5. ELECTRICAL CHARACTERISTICS
Min
Parameter
NMOSFET
Symbol
Test Condition
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = 250 µA
V
-12
Drain-Source Breakdown Voltage
V(BR)DSS
/TJ
Drain−to−Source Breakdown Voltage
Temperature Coefficient
10
mV/°C
VGS = 0 V,
TJ = 25°C
Zero Gate Voltage Drain Curren
IDSS
-1
µA
VDS = -20 V
IGSS
VDS = 0 V, VGS = ±5 V
±5
-1
µA
V
-0.4
Gate−to−Source Leakage Current
VGS(TH)
VGS = V DS , ID = 250 µA
Gate Threshold Voltage (Note2)
VGS(TH)
/TJ
Negative Threshold Temperature
Coefficient (Note2)
3.0
mV/°C
VGS = -4.5 V, ID = -7 A
VGS = -2.5 V, ID = -5 A
VGS = -1.8 V, ID = -3 A
VGS = -1.5 V, ID = -1 A
VDS = -5 V, ID = -3A
14.6
19
18
25
50
90
Drain−to−Source On Resistance (Note2)
RDS(on)
mΩ
25
40
gFS
CISS
40
S
Forward Transconductance (Note2)
Input Capacitance
2240
240
210
28
VGS = 0 V, f = 1 MHz,
VDS = -15 V
COSS
CRSS
QG(TOT)
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
QG(TH)
QGS
1.0
2.9
8.8
8.6
VGS = -4.5 V, VDS = -15 V;
ID = -4A
Threshold Gate Charge
nC
Gate−to−Source Charge
Gate−to−Drain Charge
QGD
td(ON)
Turn−On Delay Time (Note3)
tr
15
VGS = -4.5 V, VDD = -15 V;
Rise Time (Note3)
ns
V
ID = -4A, RG = 1Ω
td(OFF)
tf
150
Turn−Off Delay Time (Note3)
88
0.63
0.5
Fall Time (Note3)
TJ = 25°C
1
VGS = 0 V,
IS = -1A
Forward Diode Voltage
VSD
TJ = 125°C
2. Pulse Test: pulse width
≤
300 µs, duty cycle
≤
2%
3. Switching characteristics are independent of operating junction temperatures
Leshan Radio Company, LTD.
Rev.B May. 2017
2/6
LP3218DT1G
12V P-Channel Enhancement MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
15
14
13
12
11
10
9
15
14
13
12
11
10
9
Ta=25
℃
VDS=10V
1.8V
2.0V
–
55ºC
125ºC
2.5V,3.0v,3.5v,4.0v,4.5v
8
8
25ºC
1.5V
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0.0
0
1.0
2.0
3.0
4.0
5.0
0.0
0.5
1.0
1.5
2.0
2.5
VDS,Drain-to_Source Voltage(V)
VGS,Gate-to-Source Voltage (V)
On-Region Characteristics
Transfer Characteristics
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.10
0.08
0.06
0.04
0.02
0.00
Tj=25
℃
Ta=25
℃
ID=4.0A
1.8V
2.5V
4.5V
0 1 2 3 4 5 6 7 8 9
10 11 12 13 14 15
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ID,Drain Current (A)
VGS,Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and
Gate Voltage
On-Resistance vs. Gate-to-Source
Voltage
Leshan Radio Company, LTD.
Rev.B May. 2017
3/6
LP3218DT1G
12V P-Channel Enhancement MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
（
Con.
）
2.0E-04
2.0E-05
2.0E-06
2.0E-07
2.0E-08
0.035
0.030
0.025
0.020
0.015
VGS=4.5V
ID=4.0A
125ºC
85ºC
-50 -25
0
25
50
75 100
125 150
2
7
12
17
22
VDS,Drain-to-Source Voltage (V)
Tj Temperature (
℃
)
On-Resistance Variation with
Temperature
Drain-to-Source Leakage
Current vs. Voltage
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
ID=250uA
125ºC
1
25ºC
-55ºC
0.1
-50 -25
0
25 50 75
100 125 150
0
0.5
1
1.5
Tj Temperature(
℃
)
VSD Diode Forward Voltasge (V)
Diode Forward Voltage vs. Current
Threshold Voltage
Leshan Radio Company, LTD.
Rev.B May. 2017
4/6
LP3218DT1G
12V P-Channel Enhancement MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
（
Con.
）
5
4
3
2
1
0
15
12
9
2000
1800
1600
1400
1200
1000
800
Tj=25
℃
f=1MHz
Ciss
AVG-VDS
Crss
AVG-VGS
6
600
3
400
Coss
200
0
0
0.0E+00 5.0E-09 1.0E-08 1.5E-08 2.0E-08 2.5E-08
0 1 2 3 4 5 6 7 8 9
1
0
1
1
1
2
1
3
1
4
1
5
VDS,Drain-to-Source (V)
QG Gate-to-Source Charge (C)
Gate-to-Source and Drain-to-
Source Voltage vs. Total Charge
Capacitance variation
120
100
80
-50.0%
60
-1.0%
40
-2.0%
-20.0%
20
-5.0%
-10.0%
0
6.0E-06
6.0E-04
6.0E-02
6.0E+00
6.0E+02
Time (s)
FET Thermal Response
Leshan Radio Company, LTD.
Rev.B May. 2017
5/6
LP3218DT1G
12V P-Channel Enhancement MOSFET
7.OUTLINE AND DIMENSIONS
DFN2020-6S
DIM
A
A1
b
D
E
MIN
0.60
0.01
0.25
1.95
1.95
NOR
0.65
0.03
0.30
2.00
MAX
0.70
0.05
0.35
2.05
2.05
2.00
e
L
L1
D1
E1
A3
0.65TYP.
0.28
0.23
0.60
0.90
1.10
0.33
0.65
1.00
1.20
0.65
0.95
1.15
0.152REF
All Dimensions in mm
8.SOLDERING FOOTPRINT
DFN2020-6S
Dim
X
X1
X2
e
(mm)
0.40
0.95
1.70
0.65
0.43
0.75
1.15
1.54
2.39
Y
Y1
Y2
Y3
Y4
Leshan Radio Company, LTD.
Rev.B May. 2017
6/6
