LRC-LP3407LT1G
| Part # | LRC-LP3407LT1G |
Download  | LRC-LP3407LT1G |
LESHAN RADIO COMPANY, LTD.
LP3407LT1G
S-LP3407LT1G
30V P-Channel
Enhancement-Mode MOSFET
V
DS
-30V
3
I
D
(
V
GS
= -10V)
-4.1A
R
DS(ON)
(V
GS
= -10V)
R
DS(ON)
(V
GS
= -4.5V)
< 70m
Ω
1
< 100
m
Ω
2
FEATURES
SOT– 23 (TO–236AB)
The LP3407LT1G uses advanced trench technology to provide
excellent R
DS(ON)
with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
D
PPAP Capable.
G
ORDERING INFORMATION
S
Device
LP3407LT1G
S-LP3407LT1G
Marking
Shipping
A07
3000/Tape&Reel
LP3407LT3G
S-LP3407LT3G
10000/Tape&Reel
A07
(T
A
= 25
o
C unless otherwise noted)
MAXIMUM RATINGS
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
-30
±20
V
V
GS
Gate-Source Voltage
V
A
T
A
=25°C
T
A
=70°C
-4.1
Continuous Drain
Current
Pulsed Drain Current
C
I
D
-3.5
I
DM
-25
T
A
=25°C
T
A
=70°C
1.4
P
D
W
Power Dissipation
B
0.9
T
J
, T
STG
Junction and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
t
≤
10s
R
θ
JA
Steady-State
Steady-State
100
63
125
80
R
θ
JL
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
value in any given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The
R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
Rev .O
1/6
LESHAN RADIO COMPANY, LTD.
(T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=-250
µ
A, V
GS
=0V
-30
V
V
DS
=-24V, V
GS
=0V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=-250
µ
A
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-4.1A
±100
-3
nA
V
V
GS(th)
I
D(ON)
-1
-2
V
-25
A
70
95
m
Ω
m
Ω
R
DS(ON)
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-3A
100
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
10
S
V
A
-0.7
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
415
70
520
100
65
625
130
90
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
40
V
3.5
7.5
11.5
SWITCHING PARAMETERS
Q
g
(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.4
3.7
1.3
1.3
9.2
4.6
1.6
2.2
7.5
5.5
19
11
6
nC
nC
nC
nC
ns
Q
g
(4.5V)
V
GS
=-10V, V
DS
=-15V, I
D
=-4A
Q
gs
Q
gd
t
D(on)
t
r
1.9
3.1
V
GS
=-10V, V
DS
=-15V, R
L
=3.6
Ω
,
R
GEN
=3
Ω
ns
t
D(off)
t
f
ns
7
ns
t
rr
I
F
=-4A, dI/dt=100A/
µ
s
I
F
=-4A, dI/dt=100A/
µ
s
8.8
4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11
13
ns
Q
rr
nC
5.3
6.4
Rev .O
2/6
LESHAN RADIO COMPANY, LTD.
LP3407LT1G , S-LP3407LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
V
DS
=-5V
-6V
-10V
-4.5V
-4V
25°C
4.5
125°C
V
GS
=-3.5V
0
0
0.5
1.5
2.5
3.5
5.5
0
1
2
3
4
5
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
80
1.8
1.6
1.4
1.2
1
70
60
50
40
30
20
10
V
GS
=-10V
I
D
=-4A
V
GS
=-4.5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-3A
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
-I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
120
100
80
1.0E+02
1.0E+01
I
D
=-4A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
60
25°C
40
25°C
20
0.0
0.2
0.4
0.6
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev .O
3/6
LESHAN RADIO COMPANY, LTD.
LP3407LT1G , S-LP3407LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
10
8
800
600
400
200
0
V
DS
=-15V
I
D
=-4A
C
iss
6
4
C
oss
2
C
rss
0
0
2
4
6
8
10
0
5
10
15
-V
DS
(Volts)
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
T
A
=25°C
10
µ
s
30
20
10
0
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1
10s
DC
T
J(Max)
=150°C
T
A
=25°C
0.0
0.01
0.1
1
10
100
0.0001
0.01
1
100
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
0.1
R
θ
JA
=125°C/W
P
0.01
Single Pulse
0.001
T
on
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev .O
4/6
LESHAN RADIO COMPANY, LTD.
LP3407LT1G , S-LP3407LT1G
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Rev .O
5/6
LESHAN RADIO COMPANY, LTD.
LP3407LT1G , S-LP3407LT1G
SOT
–
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O
6/6
