LRC-LP3418DT2AG

LP3418DT2AG  

30V P-Channel (D-S) MOSFET  

1. FEATURES  

●

VDS = -30V  

mΩ  

RDS(ON)

≤

25  

,VGS@-10V,IDS@-7.3A  

RDS(ON)

≤  

3

8

mΩ,VGS@-4.5V,IDS@-5.9A  

●

●

●

●

Low RDS(ON) trench technology.  

Low thermal impedance.  

Fast switching speed.  

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

2. APPLICATIONS  

●

Load Switches  

●

DC/DC Conversion  

●

Motor Drives  

3. DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

Shipping  

LP3418DT2AG  

3B1  

4000/Tape&Reel  

4. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VDS  

VGS  

ID  

Limits  

-30  

Unit  

Drain-Source Voltage  

V

Gate-Source Voltage  

± 20  

-9.4  

-40  

Continuous Drain Current(Note 1)  

Pulsed Drain Current(Note 2)  

A

IDM  

TA = 25

℃  

TA = 70

℃  

3.1  

Maximum Power Dissipation(Note 1)  

PD  

W

2

Operating Junction and Storage Temperature Range  

Continuous Source Current (Diode Conduction)(Note 1)  

℃

TJ , Tstg

 

-50~+150  

IS 3.8  

A

Note: 1. Surface Mounted on 1” x 1” FR4 Board.  

2. Pulse width limited by maximum junction temperature.  

5. THERMAL CHARACTERISTICS  

Symbol  

Parameter  

Max  

40  

Unit  

ºC/W  

t

≤

10S  

Maximum Junction-to-Ambient (Note 1)  

Steady State  

RθJA  

90  

Leshan Radio Company, LTD.  

Rev.E Jan.

 

2020  

1/5  

LP3418DT2AG  

30V P-Channel (D-S) MOSFET  

6. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

Characteristic  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Static  

Drain-Source Breakdown Voltage  

(VGS =0V, ID =-250μA)  

Gate Threshold Voltage  

(VDS =VGS , ID =-250μA)  

Gate Leakage Current  

V(BR)DSS  

VGS(th)  

IGSS  

-30  

–

–

–

-3  

V

V

-1  

–

–

nA  

µA  

A

±100  

-1  

(VDS =0V, VGS =±20V)  

Zero Gate Voltage Drain Current  

(VDS =-24V, VGS =0V)  

On-State Drain Current(Note 3)  

(VDS = -5 V, VGS = -10 V)  

Drain-Source On-Resistance  

(VGS =-10V, ID = -7.3A)  

Drain-Source On-Resistance  

(VGS =-4.5V, ID = -5.9A)  

Diode Forward Voltage(Note 3)  

(IS =-1A, VGS =0V)  

IDSS  

–

–

ID(on)  

-14  

–

–

–

–

–

–

–

25  

38  

-1.5  

–

RDS(ON)  

(Note 3)  

mΩ  

–

VSD  

gfs  

–

V

S

Forward Transconductance(Note 3)  

(VDS = -15 V, ID = -7.3 A)  

DYNAMIC(Note 4)  

10  

Qg  

Qgs  

Qgd  

Ciss  

Coss  

Crss  

td(on)  

tr  

11.2  

2.8  

4.2  

1370  

133  

112  

6

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

Total Gate Charge  

(VDS = -15 V,  

VGS = -4.5 V,  

ID = -7.3 A)  

nC  

pF  

Gate-Source Charge  

Gate-Drain Charge  

Input Capacitance  

(VDS = -15 V,  

VGS = 0 V, f = 1  

MHz)  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

(VDS = -15 V, RL  

=2.1 Ω,ID = -7.3  

A,VGEN = -10  

5

ns  

td(off)  

tf  

55  

V,RGEN = 6 Ω)  

21  

Note: 3. Pulse test; pulse width

≤

300us, duty cycle

≤

2%.  

4. Guaranteed by design, not subject to production testing.  

Leshan Radio Company, LTD.  

Rev.E Jan.

 

2020  

2/5  

LP3418DT2AG  

30V P-Channel (D-S) MOSFET  

7

.

ELECTRICAL CHARACTERISTICS CURVES  

9

10  

9

8

7

6

5

4

3

2

1

0

VDS=10V  

8

VGS=2.8V  

VGS=2.6V  

7

VGS=3V, 4V, 5V  

6

150

℃

 

5

4

25

℃  

-55

℃  

3

2

1

0

VGS=2.4V  

VGS=2.2V  

8

0

2

4

6

10  

1.0  

1.5  

2.0  

2.5  

3.0  

VDS,Drain to Source Voltage (V)  

VGS,Gate to Source Voltage (V)  

ID vs.VGS  

ID vs.VDS  

0.05  

0.045  

0.04  

0.035  

0.03  

0.025  

0.02  

0.015  

0.01  

0.005  

0

10  

1

VGS=4.5V,ID=5.9A  

150

℃  

0.1  

0.01  

25

℃  

-55

℃  

VGS=10V,ID=7.3A  

0.001  

0.2  

0.4  

0.6  

0.8  

1.0  

-50 -25  

0

25  

50  

75 100

 

125 150  

VSD (V)  

Tj,Temperature(

℃

)  

IS vs.VSD  

RDSON vs.TJ  

Rev.E Jan.

 

2020  

Leshan Radio Company, LTD.  

3/5  

LP3418DT2AG  

30V P-Channel (D-S) MOSFET  

7

.

ELECTRICAL CHARACTERISTICS CURVES(Con.)  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

0.09  

0.08  

0.07  

0.06  

0.05  

0.04  

0.03  

0.02  

0.01  

0

Ta=25

℃  

ID=250uA  

VGS=3V  

VGS=4V  

VGS=5V  

0

2

4

6

8

10  

-50 -25  

0

25  

50  

75 100

 

125 150  

ID

，

Drain Current(A)  

Tj,Temperature (

℃

)  

RDSon vs.ID  

VGSth vs.Tj  

2000  

1800  

1600  

1400  

1200  

1000  

800  

0.05  

0.04  

0.03  

0.02  

0.01  

f=1.0MHz  

ID=7.3A  

Ta=25

℃

 

150

℃  

Ciss  

25

℃  

600  

–

55

℃

 

400  

Coss  

Crss  

200  

0

0

10  

20  

30  

2

4

6

8

10  

VDS Drain to Source Voltage(V)  

VGS Gate to Source Voltage(V)  

Capacitance  

RDS(on) vs. VGS  

Rev.E Jan.

 

2020  

Leshan Radio Company, LTD.  

4/5  

LP3418DT2AG  

30V P-Channel (D-S) MOSFET  

8.OUTLINE AND DIMENSIONS  

DFN2020-6S  

DIM  

A

A1  

b

D

E

MIN  

0.60  

0.01  

0.25  

1.95  

1.95  

NOR  

0.65  

0.03  

0.30  

2.00  

MAX  

0.70  

0.05  

0.35  

2.05  

2.05  

2.00  

e

L

L1  

D1  

E1  

A3  

0.65TYP.  

0.28  

0.23  

0.60  

0.90  

1.10  

0.33  

0.65  

1.00  

1.20  

0.65  

0.95  

1.15  

0.152REF  

All Dimensions in mm  

9.SOLDERING FOOTPRINT  

DFN2020-6S  

Dim  

X

X1  

X2  

e

(mm)  

0.40  

0.95  

1.70  

0.65  

0.43  

0.75  

1.15  

1.54  

2.39  

Y

Y1  

Y2  

Y3  

Y4  

Leshan Radio Company, LTD.  

Rev.E Jan.

 

2020  

5/5