LRC-LP4101LT1G
| Part # | LRC-LP4101LT1G |
Download  | LRC-LP4101LT1G |
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
V
DS
= -20V
LP4101LT1G
S-LP4101LT1G
R
R
DS(ON),
Vgs@-4.5V, Ids@-2.8A = 100
m
Ω
m
Ω
DS(ON),
Vgs@-2.5V, Ids@-2.0A = 150
Features
3
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
1
Improved Shoot-Through FOM
2
we declare that the material of product
SOT– 23 (TO–236AB)
compliance with RoHS reuirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
D
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
G
1
S
2
Ordering Information
Device
Marking
Shipping
LP4101LT1G
S-LP4101LT1G
P41
3000/
T
a
pe & Reel
LP4101LT3G
S-LP4101LT3G
P41
10,000/
T
a
pe & Reel
Maximum Ratings and Thermal Characteristics
(T
A
= 25
o
C unless otherwise noted)
Parameter
Symbol
V
DS
Limit
-20
± 8
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
V
GS
I
D
-2.3
-8
A
I
DM
TA = 25
o
C
TA = 75
o
C
0.9
P
D
Maximum Power Dissipation
W
0.57
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
T
J
, T
stg
R
qJC
-55 to 150
o
C
o
C/W
2)
Junction-to-Ambient Thermal Resistance (PCB mounted)
R
qJA
140
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in
2
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Rev .O
1/5
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
BV
DSS
R
DS(on)
R
DS(on)
V
GS(th)
I
DSS
V
GS
= 0V, I
D
= -250uA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -9.6V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
-20
–
–
V
m
Ω
69
83
100
150
-0.9
5
-1
m
Ω
-0.4
5
V
uA
I
GSS
±100
nA
Ω
Gate Resistance
Rg
g
fs
Forward Transconductance
V
DS
= -5V, I
D
= -4.0A
6.5
S
Dynamic
3)
Q
g
Total Gate Charge
15.23
5.49
V
DS
= -6V, I
D
= -2.8A
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= -4.5V
2.74
17.28
3.73
V
DD
= -6V, R
L
= 6
Ω
Ι
D
= −1Α,
V
GEN
= -4.5V
R
G
= 6
Ω
ns
pF
t
d(off)
t
f
36.05
6.19
Input Capacitance
C
iss
C
oss
C
rss
882.51
145.54
97.26
V
DS
= -6V, V
GS
= 0V
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
I
S
-2.4
-1.2
A
V
Diode Forward Voltage
V
SD
I
S
= -0.75A, V
GS
= 0V
-0.8
Note
: Pulse test: pulse width <= 300us, duty cycle<= 2%
Rev .O
2/5
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
18
16
14
12
10
8
20
18
16
14
12
10
8
Vgs=2.5V
Vgs=2V
Vds=5V
25°C
25°C
6
6
Vgs=1.5V
4
4
2
2
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vgs, GATE-TO-SOURCE VOLTAGE(V)
Vds,DRAIN-TO-SOURCE VOLTAGE(V)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
0.5
0.45
0.4
0.5
0.45
0.4
0.35
0.3
0.35
0.3
Vgs=1.5V
0.25
0.2
0.25
0.2
Id=3.5A
Vgs=2V
0.15
0.1
0.15
0.1
0.05
0
0.05
0
Vgs=2.5V
0
2
4
6
8
0
1
2
3
4
5
6
7
8
Vgs-Gate-to-Source Voltage(V)
Id-Drain current
Figure 3. On–Resistance versus Drain Current
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O
3/5
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
12
10
8
1800
1600
1400
1200
1000
800
Ciss
6
600
4
Coss
Crss
400
2
200
0
0
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
Vds
Qgs(nC)
Figure 5. Gate Charge
Figure 6. Capacitance
120
100
80
60
40
20
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
VGS=-4.5V ID=2A
ID=250uA
-50
0
50
100
150
-50
0
50
100
150
Temp(
o
C)
Temp(
o
C)
Figure 8. Vth Vs.Junction Temperature
Figure 7. On-Resistance Vs.Junction Temperature
Rev .O
4/5
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
SOT
–
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O
5/5
