LRC-LSI1012N3T5G
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LSI1012N3T5G
S-LSI1012N3T5G
N-Channel 1.8-V (G-S) MOSFET
1. FEATURES
SOT883
●
Power MOSFET: 1.8-V Rated
●
Gate-Source ESD Protected
●
High-Side Switching
3 Drain
●
Low On-Resistance: 0.7Ω
●
Low Threshold: 0.8 V (typ)
●
Fast Switching Speed: 10 ns
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
Source
Gate 1
2
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. BENEFITS
●
Ease in Driving Switches
●
Low Offset (Error) Voltage
●
Low-Voltage Operation
●
High-Speed Circuits
●
Low Battery Voltage Operation
3. APPLICATIONS
●
Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories.
●
Battery Operated Systems
●
Power Supply Converter Circuits
●
Load/Power Switching Cell Phones, Pagers
4. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LSI1012N3T5G
A2
10000/Tape&Reel
5. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VDS
5 secs
Steady State
Unit
Drain-Source Voltage
20
V
V
Gate-Source Voltage
VGS
±6
TA = 25
℃
TA = 85
℃
600
400
500
350
Continuous Drain Current (TJ = 150
℃
)
(Note 2)
ID
mA
Pulsed Drain Current(Note 1)
IDM
IS
1000
Continuous Source Current (diode conduction)(Note 2)
Maximum Power Dissipation(Note 2)
275
250
250
500
PD
mW
℃
/W
℃
Thermal Resistance, Junction to Ambient
RθJA
TJ , Tstg
Operating Junction and Storage Temperature Range
1.Pulse width limited by maximum junction temperature.
2.Surface Mounted on FR4 Board.
−55 ~+150
Rev.D May.
2021
Leshan Radio Company, LTD.
1/5
LSI1012N3T5G,S-LSI1012N3T5G
N-Channel 1.8-V (G-S) MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Static
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Symbol
Min.
Typ.
Max.
Unit
V(BR)DSS
–
–
20
V
Gate Threshold Voltage
VGS(th)
IGSS
V
0.45
–
–
0.9
±1
(VDS = VGS , ID = 250µA )
Gate-Body Leakage
µA
±0.5
(VDS = 0 V, VGS = ±4.5 V)
Zero Gate Voltage Drain Current
(VDS = 20 V, VGS = 0 V )
IDSS
nA
µA
–
–
0.3
–
100
5
(VDS = 20 V, VGS = 0 V, TJ = 85
℃
)
Drain-Source On-State Resistance(Note 1)
(VGS = 4.5 V, ID = 600 mA)
(VGS = 2.5 V, ID = 500 mA)
(VGS = 1.8 V, ID = 350 mA)
Diode Forward Voltage(Note 1)
(IS = 150 mA, VGS = 0 V)
–
–
–
0.41
0.53
0.7
0.7
RDS(on)
VSD
Ω
0.85
1.25
V
–
0.8
1.2
Dynamic(Note 2)
Qg
Qgs
Qgd
td(on)
tr
–
–
–
–
750
75
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
(VDS =
10 V,
VGS = 4.5 V, ID
= 250 mA)
pC
ns
225
5
–
–
–
–
–
–
(VDD = 10 V, RL
= 47Ω,ID=200
mA, VGEN = 4.5
V, RG = 10Ω)
5
td(off)
tf
25
Turn-Off Delay Time
Fall Time
–
–
–
–
–
–
11
–
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
43.5
5.8
5.8
–
–
–
(VDS = 16 V,
VGS = 0 V, f = 1
MHz)
pF
3.Pulse test; pulse width
≤
300 µs, duty cycle
≤
2%.
4.Guaranteed by design, not subject to production testing.
Rev.D May.
2021
Leshan Radio Company, LTD.
2/5
LSI1012N3T5G,S-LSI1012N3T5G
N-Channel 1.8-V (G-S) MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=25
℃
0.9
VDS=5V
VGS=1.6V,1.8V,
2V,3V,4V,4.5V
0.8
0.7
VGS=1.4V
0.6
0.5
125
℃
25
℃
0.4
VGS=1.2V
0.3
-50
℃
0.2
VGS=1V
2
0.1
0
0
1
3
0
0.5
1
1.5
VDS,Drain to Source Voltage(V)
VGS,Gate to Source Voltage(V)
ID vs. VDS
ID vs. VGS
0.6
0.6
0.55
0.5
Ta=25
℃
0.5
0.4
0.3
0.2
0.1
0
125
℃
25
℃
0.45
0.4
-50
℃
VGS=1.8V
0.35
0.3
VGS=2.5V
VGS=4.5V
0.25
0.2
0
0.2
0.4
0.6
0.8
1
0.4
0.6
0.8
1
VSD,Diode Forward Voltage(V)
ID,Drain Current(A)
IS vs. VSD
RDSON vs. ID
Rev.D May.
2021
Leshan Radio Company, LTD.
3/5
LSI1012N3T5G,S-LSI1012N3T5G
N-Channel 1.8-V (G-S) MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.6
0.5
0.4
0.3
0.2
0.1
0
50
45
40
35
30
25
20
15
10
5
25
℃
ID=200mA
-50
℃
VGS=1.8V,ID=350mA
125
℃
VGS=4.5V,ID=600mA
0
0
2
4
6
-50
-25
0
25
50
75
100 125
TJ,Temperature(
℃
)
VGS,Gate to Source Voltage(V)
RDSON vs. TJ
RDSON vs.
0.8
0.75
0.7
120
110
100
90
f=1MHz
ID=0.25mA
Ta=25
℃
0.65
0.6
80
0.55
0.5
70
60
0.45
0.4
50
40
-50
-25
0
25
50
75
100 125
0
2
4
6
8
10
Tj,Temperature(
℃
)
VDS Drain To Source Voltage(V)
VGSTH vs.
Ciss
Rev.D May.
2021
Leshan Radio Company, LTD.
4/5
LSI1012N3T5G,S-LSI1012N3T5G
N-Channel 1.8-V (G-S) MOSFET
8.OUTLINE AND DIMENSIONS
SOT883
MIN TYP MAX
0.95 1.00 1.05
0.55 0.60 0.65
DIM
D
E
e
–
–
0.64
0.34
–
–
e1
L
0.19 0.24 0.29
L1 0.22
0.27 0.32
0.10 0.15 0.20
b1 0.44
0.49 0.54
b
A
0.43 0.48 0.53
0.05
A1
0
–
All Dimensions in mm
9.SOLDERING FOOTPRINT
Dimensions (mm)
c
0.70
X
1.10
0.40
0.40
0.20
0.55
X1
X2
Y
Y1
Rev.D May.
2021
Leshan Radio Company, LTD.
5/5
DISCLAIMER
●
Before you use our Products, you are requested to carefully read this document and fully understand its
contents. LRC
shall not
be in any way responsible or
liable for failure,
malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
All information contained in this document is current as of the issuing date and subject to change without
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a
LRC sales representative.
●
