LRC-LSI1012XT1G
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LSI1012XT1G
S-LSI1012XT1G
N-Channel 1.8-V (G-S) MOSFET
1. FEATURES
●
Gate-Source ESD Protected
SC89
●
High-Side Switching
●
Low On-Resistance: 0.7Ω
●
Low Threshold: 0.8 V (typ)
●
Fast Switching Speed: 10 ns
●
We declare that the material of product
compliance with
Gate
1
2
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
3
Drain
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
Source
2. APPLICATION
(
T
o
p View)
●
Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
●
Battery Operated Systems
●
●
MARKING DIAGRAM
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
3
3. DEVICE MARKING AND RESISTOR VALUES
A
Device
Marking
Shipping
1
2
LSI1012XT1G
LSI1012XT3G
A
A
3000/Tape&Reel
10000/Tape&Reel
A
M
= Specific Device Code
= Month Code
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
VGS
20
V
V
Gate-Source Voltage
±6
TA = 25
℃
TA = 85
℃
600
400
500
350
Continuous Drain Current (TJ = 150
℃
)
(Note 2)
ID
mA
Pulsed Drain Current(Note 1)
IDM
IS
1000
Continuous Source Current (diode conduction)(Note 2)
275
275
160
250
250
140
TA = 25
℃
Maximum Power Dissipation(Note 2)
PD
mW
TA = 85
℃
Operating Junction and Storage Temperature Range
1.Pulse test; pulse width
≤
300 µs, duty cycle
≤
2%.
2.Guaranteed by design, not subject to production testing.
TJ , Tstg
−55 ~+150
℃
Leshan Radio Company, LTD.
Rev.D Jan.
2021
1/5
LSI1012XT1G, S-LSI1012XT1G
N-Channel 1.8-V (G-S) MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Static
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Symbol
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS(th)
IGSS
–
–
20
V
Gate Threshold Voltage
V
0.45
–
–
0.9
±1
(VDS = VGS , ID = 250µA )
Gate-Body Leakage
µA
±0.5
(VDS = 0 V, VGS = ±4.5 V)
Zero Gate Voltage Drain Current
(VDS = 20 V, VGS = 0 V )
IDSS
nA
µA
–
–
0.3
–
100
5
(VDS = 20 V, VGS = 0 V, TJ = 85
℃
)
Drain-Source On-State Resistance(Note 1)
(VGS = 4.5 V, ID = 600 mA)
(VGS = 2.5 V, ID = 500 mA)
(VGS = 1.8 V, ID = 350 mA)
Diode Forward Voltage(Note 1)
(IS = 150 mA, VGS = 0 V)
–
–
–
0.41
0.53
0.7
0.7
RDS(on)
VSD
Ω
0.85
1.25
–
0.8
1.2
V
Dynamic(Note 2)
–
–
Qg
Qgs
Qgd
td(on)
tr
–
–
750
75
225
5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
(VDS =
10 V,
VGS = 4.5 V, ID
= 250 mA)
pC
ns
–
–
–
–
–
–
(VDD = 10 V, RL
= 47Ω,ID=200
mA, VGEN = 4.5
V, RG = 10Ω)
5
td(off)
tf
25
11
–
Turn-Off Delay Time
Fall Time
–
–
–
Leshan Radio Company, LTD.
Rev.D Jan.
2021
2/5
LSI1012XT1G, S-LSI1012XT1G
N-Channel 1.8-V (G-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
0.5
0.5
0.45
0.4
VGS=2V,2.5V,3V
VDS=10V
0.45
0.4
0.35
0.3
0.35
0.3
VGS=1.5V
25
℃
0.25
0.2
0.25
0.2
VGS=1.4V
-55
℃
150
℃
0.15
0.1
0.15
0.1
VGS=1.3V
VGS=1.2V
0.05
0
0.05
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
VGS Gate to Source
Voltage(V)
VDS Drain to Source Voltage(V)
ID vs. VGS
ID vs. VDS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
VGS=1.8V
0.1
0.01
25
℃
150
℃
-55
℃
VGS=2.5V
VGS=4.5V
0.001
0.2
0.3
0.4
0.5
0.6
0.2
0.4
0.6
0.8
1.0
VSD Diode Forward Voltage(V)
ID,Drain Current(A)
RDS(on) vs. ID
IS vs. VSD
Leshan Radio Company, LTD.
Rev.D Jan.
2021
3/5
LSI1012XT1G, S-LSI1012XT1G
N-Channel 1.8-V (G-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.7
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ID=600mA
0.6
VGS=2.5V,ID=500mA
0.5
25
℃
0.4
0.3
150
℃
VGS=4.5V,ID=600mA
0.2
0.1
0.0
-55
℃
-50 -25
0
25 50 75
100 125 150
1
2
3
4
5
℃
)
VGS Gate to Source Voltage(V)
Tj Temperature(
RDS(on) vs. VGS
RDS(on) vs. Tj
100
90
80
70
60
50
40
30
20
10
0
1.0
0.8
0.6
0.4
ID=250uA
f=1.0MHz
Ta=25
℃
Ciss
Coss
Crss
0
5
10
15
20
-50 -25
0
25
50
75 100
125 150
Tj Temperature(
)
℃
VDS Drain to Source Voltage(V)
VGSTH vs. Tj
Capacitance
Leshan Radio Company, LTD.
Rev.D Jan.
2021
4/5
LSI1012XT1G, S-LSI1012XT1G
N-Channel 1.8-V (G-S) MOSFET
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM
MAX MIN NOM
MAX
1.50 1.60 1.70 0.059
0.063 0.067
0.75 0.85 0.95
0.030 0.034 0.040
0.60 0.70 0.80 0.024
0.028 0.031
0.23 0.28 0.33 0.009
0.011 0.013
DIM
A
B
C
D
G
H
J
0.50BSC
0.53REF
0.020BSC
0.021REF
0.10 0.15 0.20 0.004
0.006 0.008
0.30 0.40 0.50 0.012
0.016 0.02
K
L
1.10REF
0.043REF
M
N
S
—
—
—
—
10°
10°
—
—
—
—
10°
10°
1.50 1.60 1.70 0.059
0.063 0.067
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.D Jan.
2021
5/5
DISCLAIMER
●
Before you use our Products, you are requested to carefully read this document and fully understand its
contents. LRC
shall not
be in any way responsible or
liable for failure,
malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
All information contained in this document is current as of the issuing date and subject to change without
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a
LRC sales representative.
●
