LRC-S-LBSS4240LT1G

LBSS4240LT1G  

S-LBSS4240LT1G  

General Purpose Transistors NPN Silicon  

1. FEATURES  

●

Low collector-emitter saturation voltage  

●

High current capability  

●

Improved device reliability due to reduced heat generation  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

●

S- prefix for automotive and other applications requiring  

SOT23  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

2. APPLICATIONS  

●

Supply line switching circuits  

●

Battery management applications  

●

DC/DC converter applications  

●

Strobe flash units  

●

Heavy duty battery powered equipment (motor and lamp drivers).  

3. DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

Shipping  

LBSS4240LT1G  

LBSS4240LT3G  

ZE  

3000/Tape&Reel  

10000/Tape&Reel  

ZE  

4. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VCEO  

VCBO  

VEBO  

IC  

Limits  

Unit  

V

Collector-Emitter Voltage  

Collector-Base voltage  

Emitter-Base Voltage  

40  

40  

V

5

2

V

Collector current-continuoun  

Total power dissipation  

Junction temperature  

A

PD  

0.3  

W

℃

℃

TJ  

150  

Storage temperature  

TSTG  

-55~+150  

5. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

Value  

417  

Unit  

ºC/W  

ºC/W  

ºC/W  

(Note 1)  

(Note 2)  

Thermal resistance from junction to ambient  

in free air  

RθJA  

260  

Thermal resistance from junction to case(Note 1)  

RθJ

C  

150  

×

×

k

1.30.0mm 25.0mm 1.6mm(FR4),Thic ness

 

of copper film:35u

m

.  

2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm².  

Leshan Radio Company, LTD.  

Rev.E Jun. 2020  

1/5  

LBSS4240LT1G,S-LBSS4240LT1G  

General Purpose Transistors NPN Silicon  

6. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

Characteristic  

Collector–Emitter Breakdown Voltage  

(IC= 10mA,IB= 0A)  

Symbol  

Min.  

Typ.  

Max.  

Unit  

40  

–

–

VBR(CEO)  

V

Collector–Base Breakdown Voltage  

(IC= 100μA,IE= 0A)  

40  

5

–

–

–

–

VBR(CBO)  

VBR(EBO)  

V

V

Emitter–Base Breakdown Voltage  

(IE= 100μA,IC= 0A)  

Collector-Emitter cutoff Current  

(IB=0, VCE = 40V)  

ICEO  

ICBO  

IEBO  

µ

A  

nA  

nA  

–

–

–

–

–

–

1

Collector-Base cut-off current  

(IE = 0, VCB = 30 V)  

100  

100  

Emitter-Base cut-off current  

(IC = 0, VEB = 4 V)  

DC current gain  

350  

300  

300  

150  

–

–

–

–

–

–

–

–

(IC = 100 mA, VCE = 2 V)  

(IC = 500 mA, VCE = 2 V)  

(IC = 1 A, VCE = 2 V)  

hFE  

(IC = 2 A, VCE = 2 V)  

Collector-Emitter saturation voltage  

(IC = 100 mA, IB = 1 mA)  

(IC = 500 mA, IB = 50 mA)  

(IC = 750 mA, IB = 15 mA)  

(IC = 1 A, IB = 50 mA)(Note 3)  

(IC = 2 A, IB = 200 mA)(Note 3)  

Base-Emitter saturation voltage  

(IC = 2 A,IB = 200 mA)(Note 3)  

(IC = 2 A,IB = 50 mA)(Note 3)  

–

–

–

–

–

–

–

–

–

–

70  

100  

180  

180  

320  

mV  

VCE(sat)  

VBE(sat)  

V

–

–

–

–

1.1  

1.1  

Base-Emitter turn on voltage  

(IC = 100 mA,VCE = 2 V)  

V

VBE(on)  

–

–

–

–

–

0.75  

20  

–

Collector capacitance  

pF  

Cc  

fT  

(IE = Ie = 0,VCB = 10 V,f = 1 MHz)  

Transition frequency  

MHz  

100  

(IC = 100 mA,VCE = 10 V, f = 100 MHz)  

3.Pulse test: t p

≤

300 μs, δ

≤

0.02.  

Rev.E Jun. 2020  

Leshan Radio Company, LTD.  

2/5  

LBSS4240LT1G,S-LBSS4240LT1G  

General Purpose Transistors NPN Silicon  

(Ta= 25

ºC

)  

7.

ELECTRICAL CHARACTERISTICS CURVES  

800  

3

IB=18mA  

A

IB=8mA,10mA,12mA,14mA,16m  

VCE=2V  

700  

600  

500  

400  

300  

200  

100  

0

150

℃

 

2.5  

2

25

℃  

IB=6mA  

IB=4mA  

1.5  

1

-55

℃  

IB=2mA  

0.5  

0

0.001  

0.01  

0.1  

1

10  

0

1

2

3

4

5

VCE,Collector to Emittor Voltage(V)  

IC,Collector Current(A)  

HFE vs. IC  

IC vs. VCE  

1.2  

1

1

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

IC=2A  

IC=1.5  

IC=1A  

IC=0.9  

A

-55

℃  

25

℃  

A

A

IC=0.7  

0.8  

0.6  

0.4  

0.2  

0

IC=0.5A  

IC=0.3A  

IC=0.1A  

150

℃  

VCE=2V  

Ta=25

℃  

0.00005  

0.0005  

0.005  

0.05  

0.001  

0.01  

0.1  

1

10  

IC,Collector Current(A)  

IB,Base Current(A)  

VCE(sat) vs. IB  

VBE(on) vs. IC  

Rev.E Jun. 2020  

Leshan Radio Company, LTD.  

3/5  

LBSS4240LT1G,S-LBSS4240LT1G  

General Purpose Transistors NPN Silicon  

(Ta= 25

ºC

)  

7.

ELECTRICAL CHARACTERISTICS CURVES  

(Con.)  

0.50  

1.2  

0.45  

IC/IB=20  

1

0.8  

0.6  

0.4  

0.2  

0

0.40  

0.35  

0.30  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

-55

℃

 

℃

25  

25

℃  

150

℃  

150

℃  

-55

℃  

IC/IB=20  

0.001  

0.01  

0.1  

1

10  

0.001  

0.01  

0.1  

1

10  

IC,Collector Current(A)  

IC,Collector Current(A)  

VBE(sat) vs. IC  

VCE(sat) vs. IC  

Rev.E Jun. 2020  

Leshan Radio Company, LTD.  

4/5  

LBSS4240LT1G,S-LBSS4240LT1G  

General Purpose Transistors NPN Silicon  

8.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM MAX

 

MIN NOM

 

MAX  

DIM  

A

0.89  

1

1.11 0.035 0.04 0.044  

0.1 0.001

 

0.002 0.004  

0.5 0.015

 

0.018 0.02  

A1 0.01  

0.06  

0.44  

b

c

0.37  

0.09  

2.80  

1.20  

1.78  

0.10  

0.13 0.18

 

0.003 0.005 0.007  

D

E

e

L

2.9  

1.3  

1.9  

0.2  

3.04 0.11

 

0.114 0.12  

1.4 0.047

 

0.051 0.055  

2.04 0.07

 

0.075 0.081  

0.3 0.004

 

0.008 0.012  

L1 0.35  

0.54 0.69

 

0.014 0.021 0.029  

H

E  

2.10  

0°  

2.4  

—  

2.64 0.083

 

0.094 0.104  

10° 0°

 

— 10°  

θ

9.SOLDERING FOOTPRINT  

Rev.E Jun. 2020  

Leshan Radio Company, LTD.  

5/5