LRC-S-LMUN2211LT1G

LMUN2211LT1G  

S-LMUN2211LT1G  

Bias Resistor Transistor  

NPN Silicon Surface Mount Transistor  

with Monolithic Bias Resistor Network  

SOT23(TO-236)  

1. FEATURES  

3 COLLECTOR  

●

Simplifies circuit design  

●

Reduces board space and component count  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

R1  

1 BASE  

R2  

2 EMITTER  

2. DEVICE MARKING AND RESISTOR VALUES  

Device  

Marking R1(K)

 

R2(K)

Vin(V)  

Shipping  

3000/Tape&Reel  

-10

~

+40

10000/Tape&Reel  

LMUN2211LT1G  

LMUN2211LT3G  

A8A  

A8A  

10  

10  

10  

10  

-10

+

~40  

3. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VCEO  

VCBO  

IC  

Limits  

50  

Unit  

V

Collector–Emitter Voltage  

Collector–Base Voltage  

50  

V

Collector Current — Continuous  

100  

mA  

4. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

Limits  

Unit  

Total Device Dissipation,  

FR−5 Board (Note 1) @ TA = 25ºC  

Derate above 25ºC  

PD  

246  

1.5  

mW  

mW/ºC  

ºC/W  

Thermal Resistance,  

RΘJA  

508  

Junction–to–Ambient(Note 1)  

Junction and

 

Storage temperature  

1. FR–5 @ Minimum Pad.  

TJ,Tstg

−55

∼

+150

º

C  

Leshan Radio Company, LTD.  

Rev.B Jun.

 

2022  

1/5  

LMUN2211LT1G, S-LMUN2211LT1G  

Bias Resistor Transistor  

5. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min.  

50  

Typ.  

–

Max.  

–

Unit  

V

Collector–Emitter Breakdown Voltage  

(IC = 2.0 mA, IB = 0)  

VBR(CEO)  

VBR(CBO)  

ICBO  

Collector–Base Breakdown Voltage  

(IC = 10 μA, IE = 0)  

50  

–

–

–

–

–

–

V

Collector-Base Cutoff Current  

(VCB = 50 V, IE = 0)  

100  

500  

0.5  

nA  

nA  

mA  

Collector-Emitter Cutoff Current  

(VCE = 50 V, IB = 0)  

ICEO  

–

Emitter-Base Cutoff Current  

(VEB = 6.0 V, IC = 0)  

IEBO  

–

ON CHARACTERISTICS (Note 2.)  

DC Current Gain  

HFE  

VCE(sat)  

VIN(on)  

VIN(off)  

VOL  

35  

–

60  

–

–

0.25  

–

(IC = 5.0 mA, VCE = 10 V)  

Collector–Emitter Saturation Voltage  

(IC = 10 mA, IB = 0.3 mA)  

Input Voltage(on)  

V

V

–

3.0  

–

(VCE =0.3V, IC =

10mA)  

Input Voltage(off)  

V

–

–

–

0.5  

0.2  

–

(VCE

=

5

V, IC =100μA)  

Output Voltage (on)  

V

–

(VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ)  

Output Voltage (on)  

VOH  

V

4.9  

(VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ)  

Input Resistor  

R1  

7

10  

1

13  

KΩ  

Resistor Ratio  

R1/R2  

0.8  

1.2  

2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%  

Leshan Radio Company, LTD.  

Rev.B Jun.

 

2022  

2/5  

LMUN2211LT1G, S-LMUN2211LT1G  

Bias Resistor Transistor  

6.

ELECTRICAL CHARACTERISTICS CURVES  

1

1000  

VCE=10V  

IC/IB=10  

150

℃  

85

℃  

100  

150

℃  

0.1  

25

℃  

85

℃  

25

℃  

10  

-55

℃  

-55

℃  

0.01  

1

0

0.02  

0.04  

0.06  

0.08  

0.001  

0.01  

0.1  

1

IC,Collector Current(A)  

IC,Collector Current(A)  

DC Current Gain  

VCE(sat) vs.IC  

10  

5.0E-12  

Vo=0.2V  

f=1MHz  

4.5E-12  

4.0E-12  

3.5E-12  

3.0E-12  

2.5E-12  

2.0E-12  

1.5E-12  

1.0E-12  

5.0E-13  

0.0E+00  

-55

℃  

25

℃  

1

85

℃  

150

℃  

0.1  

0

0.01  

0.02  

0.03  

0.04  

0.05  

0.06  

0

10  

20  

30  

40  

50  

60  

IC,Collector Current(A)  

VR, Reverse Voltage(V)  

Capacitance vs. VR  

Vin vs. IC  

Leshan Radio Company, LTD.  

Rev.B Jun.

 

2022  

3/5  

LMUN2211LT1G, S-LMUN2211LT1G  

Bias Resistor Transistor  

6.

ELECTRICAL CHARACTERISTICS CURVES(Con.)  

1.00E+00  

1.00E-01  

1.00E-02  

1.00E-03  

1.00E-04  

1.00E-05  

1.00E-06  

Vo=5V  

150

℃  

85

℃  

25

℃  

-55

℃  

0

1

2

3

4

5

6

e(V)  

ut Voltag  

Vin,Inp  

IC vs. Vin  

Leshan Radio Company, LTD.  

Rev.B Jun.

 

2022  

4/5  

LMUN2211LT1G, S-LMUN2211LT1G  

Bias Resistor Transistor  

7.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM

 

MAX MIN NOM

 

MAX  

DIM  

A

0.89  

1

1.11 0.035 0.04 0.044  

0.1 0.001

 

0.002 0.004  

0.5 0.015

 

0.018 0.02  

A1 0.01  

0.06  

0.44  

b

c

0.37  

0.09  

2.80  

1.20  

1.78  

0.10  

0.13 0.18

 

0.003 0.005 0.007  

D

E

e

L

2.9  

1.3  

1.9  

0.2  

3.04 0.11

 

0.114 0.12  

1.4 0.047

 

0.051 0.055  

2.04 0.07

 

0.075 0.081  

0.3 0.004

 

0.008 0.012  

L1 0.35  

0.54 0.69

 

0.014 0.021 0.029  

H

E  

2.10  

0°  

2.4  

—  

2.64 0.083

 

0.094 0.104  

10° 0°

 

— 10°  

θ

8.SOLDERING FOOTPRINT  

Leshan Radio Company, LTD.  

Rev.B Jun.

 

2022  

5/5  

DISCLAIMER  

●

Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee.  

The curve of test items without electric parameter is used as reference only.  

●

Before you use our Products for new Project, you are requested to carefully read this document and fully under-  

-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising  

from the use of any LRC’s Products against warning, caution or note contained in this document.  

●

All information contained in this document is current as of the issuing date and subject to change without any prior  

notice. Before purchasing or using LRC’s Products,please confirm the latest information with a LRC sales represe-  

-ntative.