LRC-S-LN03N060TZHG
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S-LN03N060T
Z
HG
60V N-Channel Enhancement Mode MOSFET
1. FEATURES
●
Low RDS(on) trench technology.
●
Low thermal impedance.
●
Fast switching speed.
●
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
SOT223
2. APPLICATION
●
Power Routing
●
DC/DC Conversion
●
Motor Drives
3. ORDERING INFORMATION
Device
Marking
Shipping
SN
1000/Tape&Reel
S-LN03N060TZHG
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Limits
60
Unit
V
Symbol
VDSS
VGS
Drain−to−Source Voltage
Gate−to−Source Voltage
±20
5
V
TA =25°C
TA =70°C
Continuous Drain Current
ID
A
3.8
20
IDM
IAS
EAS
PD
A
A
Pulsed Drain Current (Note 1)
Avalanche Current(L=0.1mH)
Avalanche energy(L=0.1mH)
13
8.45
2
mJ
W
Power Dissipation
TA =25°C
Operating Junction and Storage Temperature Range
TJ , TSTG
−55 ~+150
ºC
1.
P
ul
s
e
w
idt
h
limited
by
maximum
j
unction tem
p
erature.
5. THERMAL CHARACTERISTICS
Symbol
Parameter
Limits
Unit
℃
/W
/W
RθJA
RθJC
65
Thermal Resistance,Junction-to-Ambient (Note 2)
Thermal Resistance,Junction-to-Case (Note 2)
15
℃
2. 1-in ² 2oz Cu PCB board
Leshan Radio Company, LTD.
1/6
Rev.A Oct.
2020
S-LN03N060T
Z
HG
60V N-Channel Enhancement Mode MOSFET
6. ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Static
Drain to Source Breakdown Voltage
(VGS =0V, ID =250µA)
V(BR)DSS
V
V
60
–
–
Gate-Source Threshold Voltage
(VDS = VGS , ID = 250 uA)
Gate-Body Leakage
VGS(th)
IGSS
1
–
2
–
3.2
nA
±100
(VDS = 0 V, VGS = ±20 V)
Zero Gate Voltage Drain Current
(VDS = 48 V, VGS = 0 V)
–
–
IDSS
µA
1
Drain-Source On-Resistance(Note 3)
(VGS = 10 V, ID =3 A)
–
–
RDS(on)
mΩ
50
58
60
75
(VGS = 5 V, ID = 2 A)
Dynamic
–
–
15
2.2
4
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
(VDS = 30 V,
VGS = 10 V,
ID = 3A)
–
–
–
–
nC
ns
–
–
–
–
–
–
–
–
–
–
–
–
–
–
10
12
20
15
(VDS = 30V,
ID=1A,VGS = 10V
RG = 6 Ω)
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
605
40
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage(Note 3)
(VDS = 30 V,
VGS = 0 V, f = 1
MHz)
pF
34
VSD
V
–
–
1.2
(VGS=0V
，
IS=2.1A)
Gate Resistance
Rg
1.5
Ω
–
–
(VDS=0V ,VGS=0V, f=1.0MHz)
3.Pulse test: PW
≤
≤
2%.
300us duty cycle
Leshan Radio Company, LTD.
2/6
Rev.A Oct.
2020
S-LN03N060T
Z
HG
60V N-Channel Enhancement Mode MOSFET
7. ELECTRICAL CHARACTERISTICS CURVES
20
15
10
5
20
15
10
5
VGS=6V,8V,10V
VDS=10V
VGS=3.8V
VGS=4.0V
25
℃
VGS=3.6V
VGS=3.4V
150
℃
VGS=3.2V
VGS=3.0V
4
-55
℃
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS(V)
0
1
2
3
5
VDS(V)
ID vs. VGS
ID vs. VDS
50
5
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
VGS=5V
150
℃
25
℃
-55
℃
0.5
VGS=10V
0.05
0.005
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10 12 14 16 18 20
ID(A)
VSD(V)
IS vs. VSD
RDS(on) vs. ID
Leshan Radio Company, LTD.
3/6
Rev.A Oct.
2020
S-LN03N060T
Z
HG
60V N-Channel Enhancement Mode MOSFET
7. ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.20
0.16
0.12
0.08
0.04
0.00
0.12
0.10
0.08
0.06
0.04
0.02
0.00
ID=3.0A
VGS=5V,ID=2A
150
℃
25
℃
VGS=10V,ID=3A
-55
℃
0
2
4
6
8
10
-50 -25
0
25 50 75
100 125 150
VGS(V)
Tj(
℃
)
RDS(on) vs. VGS
RDS(on) vs. Tj
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1200
1000
800
600
400
200
0
f=1.0MHz,
Ta=25
℃
ID=250uA
Ciss
Coss
Crss
10
0
20
30
VDS(V)
40
50
60
-50 -25
0
25 50 75
100 125 150
Tj(
℃
)
VGSth vs. Tj
Capacitance
Leshan Radio Company, LTD.
4/6
Rev.A Oct.
2020
S-LN03N060T
Z
HG
60V N-Channel Enhancement Mode MOSFET
7. ELECTRICAL CHARACTERISTICS CURVES(Con.)
100
10us
10
1
100us
100ms
1ms
10ms
DC result
0.1
0.01
0.1
1
10
100
VDS(V)
Safe Operating Area
Leshan Radio Company, LTD.
5/6
Rev.A Oct.
2020
S-LN03N060T
Z
HG
60V N-Channel Enhancement Mode MOSFET
8
.OUTLINE AND DIMENSIONS
SOT223
D
SOT223
b1
DIM
A
MIN
1.50
0.00
0.80
2.90
0.60
0.20
6.30
3.30
NOR
1.60
0.05
0.90
3.02
0.72
0.27
6.50
3.50
MAX
1.70
0.10
1.00
3.10
0.80
0.35
6.70
3.70
A2
C
A1
A2
b1
b2
c
D
E
e
e1
4.60BSC
2.30BSC
7.00
0.25
E
H
6.80
0.80
7.20
1.20
Gauge Plane
Seating Plane
b2
L
1.00
e1
L1
θ
1.75(REF)
0º~8º
10º
e
θ1
8º
12º
All Dimensions in mm
GENERAL NOTES
1. Top package surface finish Ra0.4±0.2um
2. Bottom package surface finish Ra0.7±0.2um
3. Side package surface finish Ra0.4±0.2um
4. Protrusion or Gate Burrs shall not exceed
0.10mm per side.
9
.S
OLDERING FOOTPRINT
X1
SOT223
DIM
X1
Y1
X2
Y2
(mm)
3.80
2.00
1.20
2.00
2.30
6.30
C1
C2
X2
C1
C1
Leshan Radio Company, LTD.
6/6
Rev.A Oct.
2020
DISCLAIMER
●
Before you use our Products, you are requested to carefully read this document and fully understand its
contents. LRC
shall not
be in any way responsible or
liable for failure,
malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
All information contained in this document is current as of the issuing date and subject to change without
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a
LRC sales representative.
●
