LRC-S-LP2309LT1G
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S-LP2309LT1G
P-Channel 60V (D-S) MOSFET
1. FEATURES
●
RDS(ON)
≤
215m ,
Vgs@-10V.
Ω
●
●
●
●
RDS(ON)
≤
260m ,
Vgs@-4.5V.
Ω
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
SOT23(TO-236)
2. APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
●
DSC
●
LCD Display inverter
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
P09
3000/Tape&Reel
10000/Tape&Reel
S-LP2309LT1G
S-LP2309LT3G
P09
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Limits
-60
Symbol
Unit
V
Drain–Source Voltage
VDSS
VGS
Gate–to–Source Voltage – Continuous
±20
V
-1.9
Ta=25
℃
Ta=70
℃
Continuous Drain Current
Pulsed Drain Current
ID
IDM
PD
-1.5
A
-7.6
1.4
Ta=25
℃
Ta=70
℃
Maximum Power Dissipation
W
0.9
Tj
150
Junction Temperature
℃
℃
Tstg
-55~+150
Storage Temperature Range
170
225
t
≤
10s
Steady State
90
Thermal Resistance-Junction to Ambient(Note 1)
RθJA
℃
/W
RθJC
Thermal Resistance-Junction to Case(Note 1)
1.The device mounted on 1in ² FR4 board with 2 oz copper
Rev.B May.
2020
Leshan Radio Company, LTD.
1/6
S-LP2309LT1G
P-Channel 60V (D-S) MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
STATIC
Drain–Source Breakdown Voltage
(VGS = 0, ID = -250μA)
V
V
VBRDSS
VGS(th)
IGSS
-60
-1
–
–
–
–
–
–
Gate Threshold Voltage
-3
(VDS = VGS, ID = -250μA)
Gate Leakage Current
nA
μA
±100
-10
(VDS =0V, VGS =±20V)
Zero Gate Voltage Drain Current
(VGS = 0V, VDS = -60 V)
Static Drain–Source On–State Resistance
(VGS = -10 V, ID = -1.8 A)
(VGS = -4.5 V, ID = -1.4 A)
Forward Voltage
IDSS
–
mΩ
RDS(on)
VSD
–
–
170
200
215
260
V
–
–
-1.2
(VGS = 0 V, IS = -1.2 A)
DYNAMIC
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
–
–
–
–
–
–
4.06
1.04
2.1
–
–
–
–
–
–
(VGS = -4.5 V, ID =-1A,VDS= -48 V)
Gate-Source Charge
nC
pF
(VGS = -4.5 V, ID =-1A,VDS= -48 V)
Gate-Drain Charge
(VGS = -4.5 V, ID =-1A,VDS= -48 V)
Input Capacitance
373
24.2
17.4
(VGS = 0 V, f = 1.0MHz,VDS= -30 V)
Output Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= -30 V)
Reverse Transfer Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= -30 V)
Turn-On Delay Time
–
–
–
–
3.6
3.6
–
–
–
–
td(on)
tr
(VDS = -30V, RL= 30
ID = -1A, VGS = -10V
Rise Time
ns
16.7
2.9
Turn-Off Delay Time
td(off)
tf
RG = 3.
1
Ω)
Fall Time
Gate-Resistance
Rg
Ω
6.5
–
–
(VGS = 0 V, VDS=0V,f=1MHz)
2.Pulse Test: Pulse Width
≤
300 μs, Duty Cycle
≤
2.0%.
Rev.B May.
2020
2/6
Leshan Radio Company, LTD.
S-LP2309LT1G
P-Channel 60V (D-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES
2
1.8
1.6
1.4
1.2
1
2
VGS=4V,5V
Ta=25
℃
1.8
25
℃
VGS=3V
1.6
1.4
1.2
150
℃
-55
℃
VGS=2.8V
1
0.8
0.6
0.4
0.2
0
0.8
0.6
VGS=2.6V
0.4
0.2
0
0
1
2
3
0
1
2
3
4
5
VGS,Gate to Source Voltage(V)
VDS,Drain to Source Voltage(V)
ID vs. VGS
ID vs. VDS
0.25
0.2
0.15
0.1
0.05
0
10
1
VGS=4.5V
VGS=10V
0.1
150
℃
25
℃
-55
℃
0.01
0.001
Ta=25
℃
1.8 2
1
1.2
1.4
1.6
0.2
0.4
0.6
0.8
1
ID,Drain Current(A)
VSD,Diode forward Voltage(V)
IS vs. VSD
RDS(on) vs. ID
Rev.B May.
2020
Leshan Radio Company, LTD.
3/6
S-LP2309LT1G
P-Channel 60V (D-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.4
0.35
0.3
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ID=1.0A
VGS=4.5V,ID=1.4A
VGS=10V,ID=1.8A
0.25
0.2
0.15
0.1
150
℃
25
℃
0.05
0
-55
℃
-50 -25
0
25
50
75 100
125 150
2
4
6
8
10
Tj,Temperature(
℃
)
VGS,Gate to Source Voltage(V)
RDS(on) vs. VGS
RDS(on) vs. Tj
2.4
2.2
2
500
450
400
350
300
250
200
150
100
50
f=1.0MHz
ID=250uA
Ta=25
℃
Ciss
1.8
1.6
1.4
1.2
1
Coss
Crss
0
0
-50 -25
0
25
50
75 100
125 150
20
40
60
Tj,Tempature(
℃
)
VDS(V)
VGSTH vs. Tj
Capacitance
Rev.B May.
2020
Leshan Radio Company, LTD.
4/6
S-LP2309LT1G
P-Channel 60V (D-S) MOSFET
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
10
1µs
1
10µs
100µs
1ms
100ms
DC result
10ms
0.1
PCB Size:
30.0mm
×
25.0mm
×
1.6mm(FR4)
0.01
0.1
1
10
100
VDS(V)
Safe Operating Area
Leshan Radio Company, LTD.
Rev.B May.
2020
5/6
S-LP2309LT1G
P-Channel 60V (D-S) MOSFET
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM
MAX MIN NOM
MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001
0.002 0.004
0.5 0.015
0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18
0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11
0.114 0.12
1.4 0.047
0.051 0.055
2.04 0.07
0.075 0.081
0.3 0.004
0.008 0.012
L1 0.35
0.54 0.69
0.014 0.021 0.029
H
E
2.10
0°
2.4
—
2.64 0.083
0.094 0.104
10° 0°
— 10°
θ
8.SOLDERING FOOTPRINT
Rev.B May.
2020
6/6
Leshan Radio Company, LTD.
