luxin-semi-YGP20N65T2
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YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Features
Max Junction Temperature 175°C
V
CE
I
C
650
20
V
A
V
High breakdown voltage up to 650V for
improved reliability
Short Circuit Rated
V
CE(SAT)
I
C
=20A
1.65
Very Low Saturation Voltage:
V
CE(SAT)
= 1.65V
(Typ.) @ I
C
= 20A
Soft current turn-off waveforms
Applications
Soft switching applications
Air conditioning
Motor drive inverter
Product
Package
TO-220F
TO-220
TO-263
TO247
Packaging
YGF20N65T2
YGP20N65T2
YGK20N65T2
YGW20N65T2
Tube
Tube
Tape and reel
Tube
1
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Maximum Ratings
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Value
Unit
Collector-Emitter Breakdown Voltage
V
CE
650
V
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
I
C
40
20
A
A
Diode Forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
I
F
40
20
Continuous Gate-emitter voltage
Transient Gate-emitter voltage
V
GE
V
GE
V
V
±
20
±
30
Turn off safe operating area
V
CE
≤650V,
T
j
≤ 175°C
–
60
60
5
A
A
Pulsed collector current, V
GE
=15V,
t
p
limited by T
jmax
I
CM
Short Circuit Withstand Time, V
GE
= 15V,
V
CE
≤ 400V
T
sc
μs
P
tot
P
tot
W
W
TO-220F Power
dissipation , T
j
=25
℃
30.6
125
TO-220,
TO-263, Power dissipation , T
j
=25
℃
P
tot
T
j
W
°C
°C
TO247
Power dissipation , T
j
=25
℃
Operating junction temperature
Storage temperature
142
-40…+175
-55…+175
Ts
Soldering temperature, wave soldering
1.6mm (0.063in.) from case for 10s
–
260
0.6
°C
Mounting torque, M3 screw Maximum of
mounting processes: 3
M
Nm
Thermal Resistance
TO247
1.05
Parameter
Symbol
Unit
TO-220F TO-220,TO-263
IGBT thermal resistance,
junction – case
R
θ(j-c)
Diode thermal resistance,
junction – case
R
θ(j-c)
K/W
K/W
K/W
4.9
5.8
1.2
1.7
40
2.38
62.5
Thermal resistance,
junction – ambient
R
θ(j-a)
2
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Electrical Characteristics of the IGBT
（
T
j
= 25
℃
unless otherwise specified
）
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Static Characteristics
(
Tested on wafers)
Collector to Emitter Breakdown
Voltage
Collector to Emitter Saturation
Voltage
BV
CES
V
CE(SAT)
V
GE(th)
I
CES
V
GE
= 0V, I
C
= 1mA
650
–
1.65
5.4
–
–
V
V
I
C
= 20A, V
GE
= 15V
V
GE
= V
CE
, I
C
= 250μA
V
CE
= 650V, V
GE
= 0V
V
GE
=
±
20V, V
CE
= 0V
V
CE
=20V, I
C
=15A
–
4.4
–
2.05
6.4
G-E Threshold Voltage
Collector Cut-Off Current
G-E Leakage Current
Transconductance
V
40
μA
nA
S
I
GES
–
–
±
200
–
g
fs
–
10
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
Input capacitance
C
ies
–
–
1050
50
–
–
V
CE
= 25V,
V
GE
= 0V,
f = 1MHz
Output capacitance
C
oes
pF
Reverse transfer
capacitance
C
res
Q
G
–
–
20
45
–
–
V
CC
= 520V,
I
C
= 20A,
V
GE
= 15V
Gate charge
nC
A
V
GE
=15V,t
SC
≤
5us
V
CC
=400V,
T
j
，
start
=25°C
Short circuit collector
current
–
150
–
I
C
（
）
SC
3
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Switching Characteristic, Inductive Load
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Dynamic
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
20
–
–
–
–
–
–
ns
ns
ns
Rise Time
40
T
j
=25
C
V
CC
= 400V,
I
C
= 20A,
V
GE
= 0/15V,
R
g
=20
Ω
Turn-off Delay
Time
Fall Time
60
75
ns
Turn-on Energy
Turn-off Energy
E
on
E
off
0.47
0.10
mJ
mJ
Electrical Characteristics of the DIODE
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Dynamic
Symbol
Conditions
Min
Typ
Max
Unit
V
ns
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
V
FM
T
rr
I
rr
I
F
= 20A
–
–
–
–
1.9
50
4
–
–
–
–
I
F
= 15A
V
R
= 300V,
di/dt =200A/μs
nC
Q
rr
83
4
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Fig. 1
FBSOA characteristics
for TO-220F
Fig. 2 FBSOA characteristics
for TO-220 and TO-263
100
100
t
P
= 10μs
t
P
= 10μs
10
10
50μs
50μs
100μs
500μs
1ms
100μs
500μs
1ms
DC
DC
1
1
T
a
=25°C, T
j
≤175
℃
, V
GE
=15V
T
a
=25°C, T
j
≤175
℃
, V
GE
=15V
0.1
0.1
1
10
100
V
CE
(V)
1000
1
10
100
V
CE
(V)
1000
Fig. 3 Load Current vs. Frequency
for TO-220F
Fig.4 Load Current vs. Frequency
TO-220 and TO-263
40
60
35
50
80℃
80℃
30
40
25
20
30
100℃
100℃
15
20
rectangular current shape,
D=0.5, V
CE
=400V,
rectangular current shape,
D=0.5, V
CE
=400V,
10
5
V
GE
=0/15V, R
g
=20Ω，T
j
≤175
℃
10
0
V
GE
=0/15V, R
g
=20Ω，T
j
≤175
℃
0
1
10
f (KHz)
100
1
10
f (KHz)
100
5
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Fig.5 FBSOA
characteristics
for TO-247
Fig.6 Load
Current vs. Frequency
for TO-247
60
100
50
80℃
t
P
= 10μs
40
10
50μs
100μs
500μs
1ms
100℃
30
DC
20
1
rectangular current shape,
D=0.5, V
CE
=400V,
10
0
V
GE
=0/15V, R
g
=20Ω，T
j
≤175
℃
T
a
=25°C, T
j
≤175
℃
, V
GE
=15V
0.1
1
10
100
1
10
100
VCE(V)
1000
f (KHz)
Fig. 7
Output characteristics
Fig. 8 Saturation voltage characteristics
80
60
25
℃
150
℃
70
V
GE
= 20V
175
℃
50
40
30
20
10
0
17V
60
15V
13V
50
11V
9V
40
7V
30
20
10
0
V
GE
= 15V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
CE
(V)
V
CE
(V)
6
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Fig. 9
Switching times vs. gate resistor
Fig. 10 Switching times vs. collector current
1000
1000
td(off)
td(off)
tf
tf
td(on)
tr
td(on)
tr
100
100
10
10
Common Emitter
V
CC
= 400V, V
GE
= 15V, R
G
=20Ω
Ta=25℃
Common Emitter
V
CC
= 400V, V
GE
= 15V, I
C
=20A
Ta=25℃
1
1
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
R
g
(Ω)
I
C
(A)
Fig. 11
Switching loss vs. gate resistor
Fig. 12 Switching loss vs. collector current
0.7
2
Eoff
Eon
0.6
Eoff
Eon
1.8
1.6
1.4
1.2
1
0.5
0.4
0.3
0.8
0.6
0.4
0.2
0
Common Emitter
Common Emitter
V
CC
= 400V, V
GE
= 15V, R
G
=20Ω
Ta=25℃
V
CC
= 400V, V
GE
= 15V, I
C
=20A
Ta=25℃
0.2
0.1
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
R
g
(Ω)
I
c
(A)
7
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
Fig. 13
Gate charge characteristics
Fig. 14
Capacitance characteristics
10000
15
Ciss(pF)
Coss(pF)
Crss(pF)
12
9
1000
360V
520V
6
100
3
Common Emitter
I
C
= 20A ,Ta=25℃
Common Emitter
V
GE
= 0V, f = 1 MHz
Ta=25℃
0
10
0
10
20
30
40
50
0
5
10
15
20
25
30
V
CE
(V)
Qg (nC)
8
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
TO-220F package information
9
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
TO-220 package information
10
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
TO-263 package information
11
2021.04
/
Rev1.1
YGF20N65T2,YGK20N65T2
YGP20N65T2,YGW20N65T2
650V /20A Trench Field Stop IGBT
TO247 package information
12
2021.04
/
Rev1.1
