luxin-semi-YGW50N65T1
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YGW50N65T1
650V /50A Trench Field Stop IGBT
FEATURES
V
CE
I
C
650
50
V
A
V
High breakdown voltage up to 650V for
improved reliability
V
CE(SAT)
I
C
=50A
1.8
Trench-Stop Technology offering :
High speed switching
High ruggedness, temperature stable
Short circuit withstand time – 5
s
Low V
CEsat
Easy parallel switching capability due
to positive temperature coefficient in
V
CEsat
Enhanced avalanche capability
APPLICATION
Uninterruptible Power Supplies
Inverter
Welding Converters
PFC applications
Converter with high switching frequency
Product
YGW50N65T1
Package
TO247
Packaging
Tube
1
2021.10
/
Rev4.0
YGW50N65T1
Maximum Ratings
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Value
Unit
Collector-Emitter Breakdown Voltage
V
CE
650
V
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
I
C
100
50
A
A
Diode Forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
I
F
100
50
Continuous Gate-emitter voltage
Transient Gate-emitter voltage
V
GE
V
GE
V
V
±
20
±
30
Turn off safe operating area
V
CE
≤650V,
T
j
≤ 175°C, t
p
= 1μs
–
150
150
5
A
A
Pulse collector
current,
V
GE
=15V,
t
p
limited by T
jmax
I
CM
T
SC
Short Circuit Withstand Time, V
GE
= 15V,
V
CE
≤ 400V
μs
P
tot
T
j
312
W
°C
°C
Power dissipation , T
j
=25
°C
Operating junction temperature
Storage temperature
-40…+175
-55…+175
T
S
Soldering temperature, wave soldering
1.6mm (0.063in.) from case for 10s
–
260
0.6
°C
Mounting torque, M3 screw Maximum of
mounting processes: 3
M
Nm
Thermal Resistance
Parameter
Symbol
R
θ(j-c)
Max. Value
0.48
Unit
IGBT thermal resistance,
junction – case
K/W
Diode thermal resistance,
junction – case
R
θ(j-c)
0.8
40
K/W
K/W
Thermal resistance,
junction – ambient
R
θ(j-a)
2
2021.10
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Rev4.0
YGW50N65T1
Electrical Characteristics
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static
V
GE
=0V , I
C
=250uA
V
GE
=0V , I
C
=1mA
V
GE
=V
CE
, I
C
=250uA
650
650
4.0
–
–
–
–
V
V
V
Collector-Emitter Breakdown
Voltage
BV
CES
Gate- Emitter Threshold Voltage
V
GE(th)
5.0
6.0
V
GE
=15V, I
C
=50A
V
CE(sat)
T
j
= 25°C
T
j
= 175°C
Collector-Emitter Saturation
Voltage
–
–
1.80
2.45
2.30
–
V
V
CE
= 650V,
V
GE
= 0V
T
j
= 25°C
T
j
= 175°C
Zero gate voltage collector current
I
CES
–
0.1
–
40
4000
μA
Gate-emitter leakage current
Transconductance
I
GES
–
–
–
100
–
nA
S
V
CE
= 0V,
V
GE
=
±
20V
V
CE
= 20V,
I
C
= 50A
g
fs
30
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
Input capacitance
C
ies
C
oes
C
res
–
–
–
2800
130
75
–
–
–
V
CE
= 30V,
V
GE
= 0V,
f = 1MHz
Output capacitance
pF
Reverse transfer capacitance
V
CC
= 520V, I
C
= 50A,
V
GE
= 15V
Gate charge
Q
G
–
–
180
310
–
–
nC
A
V
GE
=15V,t
SC
≤
5us
V
CC
=400V,
Short circuit collector current
I
C
（
）
SC
T
j
，
start
=25°C
3
2021.10
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Rev4.0
YGW50N65T1
Switching Characteristic, Inductive Load
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
T
j
=25
C
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
40
22
–
–
–
–
–
–
ns
ns
ns
Rise Time
Turn-off Delay
Time
Fall Time
180
88
V
CC
= 400V,
I
C
= 50.0A,
V
GE
= 0.0/15.0V,
Rg=12
Ω
ns
Turn-on Energy
Turn-off Energy
E
on
E
off
1.9
1.1
mJ
mJ
Electrical Characteristics of the DIODE
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
V
FM
T
rr
I
rr
I
F
= 50A
–
–
–
–
1.9
20
–
–
–
–
V
ns
A
I
F
= 50A,
V
R
= 400V,
di/dt= 100A/μs,
10
Q
rr
100
nC
4
2021.10
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Rev4.0
YGW50N65T1
Fig. 2 Load Current vs. Frequency
Fig. 1
FBSOA characteristics
140
120
100
80
100
t
P
= 10μs
50μs
10
110℃
100μs
500μs
1ms
80℃
60
DC
1
40
20
D=0.5, V
CE
=400V,
V
GE
=0/15V, R
g
=12Ω，T
j
≤175°C
T
a
=25°C, T
j
≤175
℃
, V
GE
=15V
0.1
0
1
10
100
V
CE
(V)
1000
1
10
100
1000
f (KHz)
Fig. 3 Output characteristics
Fig. 4 Saturation voltage characteristics
150
150
V
GE
= 20V
140
140
130
120
110
100
90
130
17V
25
℃
120
15V
110
175
℃
13V
100
11V
90
9V
80
80
7V
70
70
60
50
40
30
20
10
0
60
50
40
30
20
10
V
GE
= 15V
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
CE
(V)
V
CE
(V)
5
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YGW50N65T1
Fig. 6 Switching times vs. collector current
Fig. 5
Switching times vs. gate resistor
1000
1000
100
10
td(off)
td(off)
tf
tf
td(on)
tr
td(on)
tr
100
Common Emitter
V
CC
= 400V, V
GE
= 15V, R
G
=12Ω
Ta=25℃
Common Emitter
V
CC
= 400V, V
GE
= 15V, I
C
=50A
Ta=25℃
10
0
5
10 15 20 25 30 35 40 45 50 55 60 65
R
g
(Ω)
0
10 20 30 40 50 60 70 80 90
100 110
I
C
(A)
Fig. 7
Switching loss vs. gate resistor
Fig. 8 Switching loss vs. collector current
6
5
4
3
2
1
0
6
Eoff
Eon
Eoff
Eon
5
4
3
2
1
Common Emitter
Common Emitter
V
CC
= 400V, V
GE
= 15V, R
G
=12Ω
Ta=25℃
V
CC
= 400V, V
GE
= 15V, I
C
=50A
Ta=25℃
0
0
10 20 30 40 50 60 70 80 90
100 110
I
C
(A)
0
5
10 15 20 25 30 35 40 45 50 55 60 65
R
g
(Ω)
6
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YGW50N65T1
Fig. 10
Capacitance characteristics
Fig. 9
Gate charge characteristics
15
10000
1000
100
Ciss(pF)
Coss(pF)
Crss(pF)
130V
520V
12
9
6
3
0
Common Emitter
V
GE
= 0V, f = 1 MHz
Ta=25℃
Common Emitter
I
C
= 50A ,Ta=25℃
10
0
50
100
150
200
0
10
20
30
Q
g
(nC)
V
CE
(V)
7
2021.10
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Rev4.0
