luxin-semi-YGW60N65T1
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YGW60N65T1
650V /60A Trench Field Stop IGBT
FEATURES
V
CE
I
C
650
60
V
A
V
High breakdown voltage up to 650V for
improved reliability
V
CE(SAT)
I
C
=60A
1.85
Trench-Stop Technology offering :
High speed switching
High ruggedness, temperature stable
Low V
CEsat
Easy parallel switching capability due
to positive temperature coefficient in
V
CEsat
Enhanced avalanche capability
APPLICATION
Uninterruptible Power Supplies
Inverter
Welding Converters
PFC applications
Converter with high switching frequency
Product
YGW60N65T1
Package
TO247
Packaging
Tube
1
2021.10
/
Rev4.0
YGW60N65T1
Maximum Ratings
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Value
Unit
Collector-Emitter Breakdown Voltage
V
CE
650
V
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
I
C
120
60
A
A
Diode Forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
I
F
120
60
Continuous Gate-emitter voltage
Transient Gate-emitter voltage
V
GE
V
GE
V
V
±
20
±
30
Turn off safe operating area
V
CE
≤650V,
T
j
≤ 175°C
–
180
180
A
A
Pulse collector
current,
V
GE
=15V,
t
p
limited by T
jmax
I
CM
P
tot
W
Power dissipation , T
j
=25
°C
312
Operating junction temperature
T
j
-40…+175
°C
Storage temperature
T
S
-55…+175
260
°C
°C
Soldering temperature, wave soldering
1.6mm (0.063in.) from case for 10s
–
Mounting torque, M3 screw Maximum of
mounting processes: 3
M
0.6
Nm
Thermal Resistance
Parameter
Symbol
R
θ(j-c)
Max. Value
0.48
Unit
K/W
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
R
θ(j-c)
1.1
40
K/W
K/W
Thermal resistance,
junction – ambient
R
θ(j-a)
2
2021.10
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Rev4.0
YGW60N65T1
Electrical Characteristics
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static
V
GE
=0V , I
C
=250uA
V
GE
=0V , I
C
=1mA
V
GE
=V
CE
, I
C
=250uA
650
650
4.0
–
–
–
–
V
V
V
Collector-Emitter Breakdown
Voltage
BV
CES
Gate Threshold Voltage
V
GE(th)
5.0
6.0
V
GE
=15V, I
C
=60A
V
CE(sat)
T
j
= 25°C
T
j
= 175°C
Collector-Emitter Saturation
Voltage
–
–
1.85
2.53
2.2
–
V
V
CE
= 650V,
V
GE
= 0V
T
j
= 25°C
T
j
= 175°C
Zero gate voltage collector current
I
CES
–
–
0.1
–
40
4000
μA
Gate-emitter leakage current
Transconductance
I
GES
–
–
–
100
–
nA
S
V
CE
= 0V,
V
GE
=
±
20V
V
CE
= 20V,
I
C
= 60A
g
fs
52
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
Input capacitance
C
ies
C
oes
C
res
–
–
–
3800
130
70
–
–
–
V
CE
= 30V,
V
GE
= 0V,
f = 1 MHz
Output capacitance
pF
Reverse transfer capacitance
V
CC
= 520V, I
C
= 60A,
V
GE
= 15V
Gate charge
Q
G
–
158
–
nC
3
2021.10
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Rev4.0
YGW60N65T1
Switching Characteristic, Inductive Load
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
T
j
=25
C
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
56
79
–
–
–
–
–
–
ns
ns
ns
Rise Time
V
CC
= 400V,
I
C
= 60.0A,
V
GE
= 0.0/15.0V,
R
g
=12
Ω
Turn-off Delay
Time
Fall Time
165
81
ns
Turn-on Energy
Turn-off Energy
E
on
E
off
2.2
0.89
mJ
mJ
Electrical Characteristics of the DIODE
（
T
j
= 25
℃
unless otherwise specified
）
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
V
ns
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
V
FM
T
rr
I
rr
I
F
= 60A
–
–
–
–
2.0
20
–
–
–
–
I
F
= 50A,
V
R
= 400V,
di/dt= 100A/μs,
10
Q
rr
100
nC
4
2021.10
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Rev4.0
YGW60N65T1
Fig. 1
FBSOA characteristics
Fig. 2 Power dissipation as a function of T
C
350
300
250
200
150
100
50
100
t
P
= 10μs
50μs
10
100μs
500μs
1ms
DC
1
T
a
=25°C, T
j
≤175
℃
, V
GE
=15V
0
0.1
25
50
75
100 125 150 175 200
1
10
100
V
CE
(V)
1000
T
C
(
℃
)
Fig. 3 Output characteristics
Fig. 4 Saturation voltage characteristics
200
V
GE
= 20V
190
180
170
160
150
140
130
120
110
100
90
140
17V
15V
13V
11V
25
℃
120
100
80
60
40
20
0
175
℃
9V
7V
80
70
60
50
40
30
20
10
V
GE
= 15V
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
CE
(V)
V
CE
(V)
5
2021.10
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Rev4.0
YGW60N65T1
Fig. 5
Switching times vs. gate resistor
Fig. 6 Switching times vs. collector current
1000
1000
100
10
td(off)
td(off)
tf
tf
td(on)
tr
td(on)
tr
100
Common Emitter
Common Emitter
V
CC
= 400V, V
GE
= 15V, R
G
=12Ω
Ta=25℃
V
CC
= 400V, V
GE
= 15V, I
C
=60A
Ta=25℃
10
0
10 20 30 40 50 60 70 80 90
100 110
I
C
(A)
0
5 10
15 20 25 30 35 40 45 50 55 60 65
R
g
(Ω)
Fig. 7
Switching loss vs. gate resistor
Fig. 8 Switching loss vs. collector current
4.5
4.5
Eoff
Eon
Eoff
Eon
4
4
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
Common Emitter
Common Emitter
V
CC
= 400V, V
GE
= 15V,
R
G
=12Ω, Ta=25℃
0.5
0
0.5
0
V
CC
= 400V, V
GE
= 15V, I
C
=60A
Ta=25℃
0
10 20 30 40 50 60 70 80 90
100 110
I
c
(A)
0
5 10
15 20 25 30 35 40 45 50 55 60 65
R
g
(Ω)
6
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Rev4.0
YGW60N65T1
Fig. 9
Gate charge characteristics
Fig. 10
Capacitance characteristics
15
10000
1000
100
12
9
Ciss(pF)
Coss(pF)
Crss(pF)
130V
520V
6
3
Common Emitter
VGE = 0V, f = 1MHz
Ta=25℃
Common Emitter
I
C
= 60A ,Ta=25℃
10
0
0
10
20
30
0
50
100
150
200
Q
g
(nC)
V
CE
(V)
7
2021.10
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Rev4.0
