MA-COM-MAAM-011275-DIE
| Part # | MA-COM-MAAM-011275-DIE |
Download  | MA-COM-MAAM-011275-DIE |
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Functional Schematic
1
Features
•
•
•
•
•
Wide Frequency Range: 30 kHz
–
40 GHz
15 dB Gain
3
–
8 V DC, 200 mA
22 dBm P1dB @ 22 GHz
Integrated Power Detector with a Detector
Reference Voltage Generator
50
Ω
Input and Output Match
RoHS* Compliant
9
10
8
12
11
14
7
6
5
•
•
•
13
Die Size: 2.3 x 1.0 x 0.05 mm
15
Applications
•
Instrumentation and Communication Systems
1
Description
Backside Die
GND
2
MAAM
–
011275
–
DIE is an easy
–
to
–
use, wideband
amplifier that operates from 30 kHz to 40 GHz. The
amplifier provides 15 dB gain, 22 dBm output power
and 5.3 dB noise figure. It is matched to 50
Ω
with
typical return loss better than 13 dB.
3
4
16
1. Image
not to scale.
Pad Configuration
2
MAAM
–
011275
–
DIE is suitable for a wide range of
applications in instrumentation and communication
systems.
Pad #
Pad Name
GND
Description
Ground
1,3,5,7,
14,15,16
2
4
RF
IN
RF Input
V
G1
Gate Voltage 1
RF Output
6
RF
OUT
/V
DD
DET
OUT
DET
REF
DET
BIAS
V
DD
8
Output Detector
Reference Detector
Detector Bias
Drain Voltage
9
10
11
12
13
Ordering Information
V
DAUX
Auxiliary Drain Voltage
Gate Voltage 2
MAAM
–
011275
–
DIE
Die in Gel Pack
V
G2
2. Backside
of die must be connected to RF, DC and thermal
ground.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Electrical Specifications:
T
C
= 25 °C, V
DD
= 7 V,
Z
0
= 50
Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Gain
1
–
40 GHz
dB
13.5
15
—
Gain Flatness
Input Return Loss
Output Return Loss
P1dB
1
–
40 GHz
1
–
40 GHz
1
–
40 GHz
22 GHz
dB
dB
—
—
±0.75
15
—
—
—
—
—
dB
—
13
dBm
dBm
—
21
P3dB
22 GHz
22.5
24
P
IN
= +2 dBm / tone, 22 GHz
tone spacing = 2 MHz
Output IP3
dBm
—
33
—
26 GHz
40 GHz
5.3
6.8
Noise Figure
dB
—
—
—
—
Drain Current
3
Quiescent bias
mA
200
3. Set
by adjusting V
G1
as outlined in operating conditions on page 3.
Absolute Maximum Ratings
4,5
Handling Procedures
Please observe the following precautions to avoid
damage:
Input Power
Drain Supply Voltage
V
G1
17 dBm
10 V
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity.
Proper ESD control techniques
should be used when handling these HBM Class 1A
devices.
–
4 V <
V
G1
< 0 V
–
3.5 V <
V
G2
< +4 V
340 mA
V
G2
Drain Supply Current
Junction Temperature
6,7
Operating Temperature
Storage Temperature
+150°C
–
40°C to +85°C
–
65°C to +150°C
4. Exceeding
any one or combination of these limits may cause
permanent damage to this device.
5. MACOM
does not recommend sustained operation near these
survivability limits.
6. Operating
at nominal conditions with T
J
≤
+150°C will ensure
MTTF > 1 x 10
6
hours.
7. Junction
Temperature (T
J
) = T
A
+
Ө
JC
* ((V * I)
–
(P
OUT
–
P
IN
))
Typical thermal resistance (
Ө
JC
) = 11.9 °C/W.
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Operating Conditions
V
G2
can be used for gain control in all bias
configurations. If gain control is not required, V
G2
should be left open
–
circuited.
The recommended biasing conditions are V
DD
= 7 V
and I
DSQ
= 200 mA, with I
DSQ
set by adjusting V
G1
after correctly setting V
DD
(refer to turn on
sequence). To maintain the best performance
MACOM recommends using an active bias circuit for
constant I
DD
.
Regardless of bias method used,
2
bypass
capacitors of 100 pF and 1 µF should be connected
to V
DAUX
. This provides for improved gain flatness
below 2 GHz down to 30 kHz when required.
It is noted that any biasing arrangement used,
including active biasing, must be able to source at
least 10 mA into the V
G1
port. This is because the
V
G1
port contains a resistive divider with a total
resistance to ground of 244
Ω.
For the
recommended I
DSQ
of 200 mA obtained at a V
G1
voltage of around 2.5 V, 10 mA of V
G1
current (I
G1
) is
expected. These values of V
G1
and I
G1
will vary
slightly between devices.
The 100 pF capacitor can be a single layer capacitor
or an SMT device on the PCB. Although it should be
positioned as closely to the device as practically
possible, the frequency response is not particularly
sensitive to this. The 1
μ
F capacitor can be placed
further away on the PCB.
Data in this datasheet was measured using bias
option 1 and 100 pF (C1) and 1 µF (C3) capacitors
There are two possible methods for biasing V
DD
:
on V
DAUX
.
1. Apply
V
DD
through a bias tee connected to the
RF
OUT
/V
DD
port and connect an external DC block
to the RF
IN
port. This provides wide band
performance of 40 MHz to 50 GHz (depending on
the bandwidth of the bias tee).
2. Apply
V
DD
through a wideband conical inductor
connected to the V
DD
port. No external bias tee is
required at the RF
OUT
/V
DD
port; however, external
DC blocks are required at both the RF
IN
and
RF
OUT
ports. Using this method provides for an
operational frequency of 40 MHz to 50 GHz.
Operating the MAAM
–
011275
–
DIE
Turn
–
on
1. Apply
V
G1
(
–
4 V).
2. Increase
V
DD
to +7 V.
3. Set
I
DSQ
by adjusting V
G1
more positive.
(typically
–
2.5 V for I
DSQ
= 200 mA).
4. Apply
RF
IN
signal.
Turn
–
off
1. Remove
RF
IN
signal.
2. Decrease
V
G1
to
–
4 V.
3. Decrease
V
DD
to 0 V.
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Application Schematic
C3
V
DD
DET
REF
DET
OUT
V
DD
C1
DET
REF
DET
BIAS
DET
OUT
V
DAUX
V
DD
GND
GND
RF
OUT
RF
OUT
/V
DD
V
G2
V
G2
GND
External
Bias Tee
GND
GND
RF
IN
Backside Die
GND
RF
IN
GND
GND
C4
V
G1
DC Block
V
G1
C2
All bond pads labelled GND have vias to the backside metal. Bond wires on these pads are optional.
Component List
Part
C1
Value
100 pF
1000 pF
1 µF
Size
Single Layer
0402
C2
C3, C4
0402
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Typical Performance Curves: V
DD
= 7 V, I
DSQ
= 200 mA
Reverse Isolation
Gain
25
0
-20
-40
-60
-80
20
15
10
5
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
0
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
Input Return Loss
Output Return Loss
0
0
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
-5
-10
-15
-20
-25
-5
-10
-15
-20
-25
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Typical Performance Curves: V
DD
= 7 V, I
DSQ
= 200 mA
Output P3dB
Output P1dB
30
30
25
20
15
10
5
25
20
15
10
5
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
0
0
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
Noise Figure @ +25°C
OIP3
10
50
40
30
20
10
0
8
6
4
2
0
-40°C
+25°C
+85°C
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Typical Performance Curves: T
A
= +25°C, I
DSQ
= 200 mA
P3dB vs. V
DD
Output P1dB vs. V
DD
30
30
25
20
15
10
5
25
20
15
10
5
3 V
4 V
5 V
6 V
7 V
8 V
3 V
4 V
5 V
6 V
7 V
8 V
0
0
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. V
DD
Gain vs. V
DD
10
25
8
6
4
2
0
20
15
10
5
3 V
4 V
5 V
6 V
7 V
8 V
3 V
4 V
5 V
6 V
7 V
8 V
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Typical Performance Curves: V
DD
= 7 V, T
A
= +25°C
Reverse Isolation vs. I
DD
Gain vs. I
DD
25
0
-20
-40
-60
-80
20
15
10
5
200
m
A
220
m
A
230
m
A
240
m
A
200
m
A
220
m
A
230
m
A
240
m
A
0
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
Input Return Loss vs. I
DD
Output Return Loss vs. I
DD
0
0
200
m
A
200
m
A
220
m
A
230
m
A
240
m
A
220
m
A
230
m
A
240
m
A
-5
-10
-15
-20
-25
-5
-10
-15
-20
-25
0
10
20
30
40
50
0
10
20
30
40
50
Frequency (GHz)
Frequency (GHz)
8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
Die Dimensions
9,10,11
9. All
units in µm, unless otherwise noted, with a tolerance of ±5 µm.
10. Die thickness is 50 ±5 µm.
11. Die size reflects un
–
cut dimensions. Laser kerf reduces die size by ~ 25 µm each dimension.
Bond Pad Detail
1,3,5,7
2, 6,
74
74
76
96
76
71
89
140
76
4,13,14,16
8,9,10,11
12
96
71
15
76
9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
Wideband Distributed Amplifier
30 kHz – 40 GHz
MAAM-011275-DIE
Rev. V4
MACOM Technology Solutions Inc.
(“
MACOM
”).
All rights reserved.
These materials are provided in connection with MACOM
’
s products as a service to its customers and may be
used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate
agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these
materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to
specifications and product descriptions, which MACOM may make at any time, without notice. These materials
grant no license, express or implied, to any intellectual property rights.
THESE MATERIALS ARE PROVIDED “AS IS” WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED,
RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR
COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY
RESULT FROM USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully
indemnify MACOM for any damages resulting from such improper use or sale.
10
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018857
