MA-COM-MAGX-100027-300C0P
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GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Features
•
•
•
•
•
•
•
•
Suitable for Linear and Saturated Applications
Pair of Isolated, Symmetric Amplifiers
CW and Pulsed Operation: 300 W Output Power
Internally Pre
–
Matched
260°C Reflow Compatible
50 V Operation
100% RF Tested
RoHS* Compliant
Description
Functional Schematic
The MAGX
–
100027
–
300C0P is high power GaN on
Si HEMT device optimized for DC
–
2.7 GHz
frequency operation. The device supports both CW
and pulsed operation with peak output power levels
of 300 W (54.8 dBm) in a plastic package.
RF
IN
/V
G
RF
OUT
/V
D
PAD
The MAGX
–
100027
–
300C0P is ideally suited for a
multitude of applications including military radio
communications, digital cellular infrastructure, RF
energy, avionics, test instrumentation and RADAR.
RF
IN
/V
G
RF
OUT
/V
D
Typical Performance:
•
V
DS
= 50 V, I
DQ
= 100 mA, T
C
= 25°C. One side
Measured under pulsed load
–
pull at 2.5 dB
Compression, 100 µs pulse width,1 ms period,
10% duty cycle
Pin Configuration
1
2
3
4
5
RF
IN
/ V
G1
RF
OUT
/ V
D1
RF
IN
/ V
G2
RF
OUT
/ V
D2
Pad
3
RF Input / Gate
RF Output / Drain
RF Input / Gate
RF Output / Drain
Ground / Source
Frequency Output
Power
1
Gain
2
(dB)
2
D
(GHz)
(dBm)
(%)
0.9
1.4
2.0
2.5
2.7
53.5
53.3
53.5
53.5
53.4
20.0
17.6
15.0
13.5
13.5
71.1
74.8
64.3
64.8
65.3
3. The
exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
1. Load
impedance tuned for maximum output power.
2. Load
impedance tuned for maximum drain efficiency.
Ordering Information
Part Number
Package
MAGX
–
100027
–
300C0P
MAGX
–
100027
–
300CTP
MAGX
–
1A0027
–
300C0P
Bulk quantity
Tape and Reel
Sample board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
RF Electrical Characteristics:
T
C
= 25
C, V
DS
= 50 V, I
DQ
= 200 mA
Note: Performance in MACOM Evaluation Test Fixture, 50
Ω
system
Parameter
Small Signal Gain
Test Conditions
Pulsed
4
, 2 GHz
Pulsed
4
, 2 GHz, 2.5 dB Gain Compression
Pulsed
4
, 2 GHz, 2.5 dB Gain Compression
Pulsed
4
, 2 GHz, 2.5 dB Gain Compression
Pulsed
4
, 2 GHz
Symbol Min.
Typ.
16.3
14.0
57.5
55.5
0.02
0.01
14.5
57.5
Max. Units
G
SS
G
SAT
SAT
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
dB
dBm
%
Power Gain
Saturated Drain Efficiency
Saturated Output Power
Gain Variation (
–
25
C to +85
C)
Power Variation (
–
25
C to +85
C)
Gain
P
SAT
dBm
dB/
C
dB/
C
dB
∆
G
Pulsed
4
, 2 GHz
∆
P2.5dB
G
P
Pulsed
4
, 2 GHz, P
IN
= 41.2 dBm
Pulsed
4
, 2.0 GHz, P
IN
= 41.2 dBm
All phase angles
Drain Efficiency
%
Ruggedness: Output Mismatch
VSWR = 10:1, No Damage
RF Electrical Specifications:
T
A
= 25
C, V
DS
= 50 V, I
DQ
= 200 mA
Note: Performance in MACOM Production Test Fixture, 50
Ω
system
Parameter
Power Gain
Test Conditions
Symbol Min.
Typ.
14
Max. Units
Pulsed
4
, 2 GHz, 2.5 dB Gain Compression
Pulsed
4
, 2 GHz, 2.5 dB Gain Compression
Pulsed
4
, 2 GHz, 2.5 dB Gain Compression
Pulsed
4
, 2 GHz, P
IN
= 41.2 dBm
G
SAT
SAT
P
SAT
G
P
13
52
54
13
52
–
–
–
–
–
dB
%
Saturated Drain Efficiency
Saturated Output Power
Gain
57.5
55.4
14.2
57.5
dBm
dB
Drain Efficiency
Pulsed
4
, 2 GHz, P
IN
= 41.2 dBm
dB
4. Pulse
details: 100 µs pulse width, 1 ms period, 10% Duty Cycle.
DC Electrical Characteristics (Per Each Side of Symmetric Device) T
A
= 25°C
Parameter
Test Conditions
V
GS
=
–
8 V, V
DS
= 130 V
V
GS
=
–
8 V, V
DS
= 0 V
Symbol Min.
Typ.
–
Max. Units
Drain
–
Source Leakage Current
Gate
–
Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
I
DLK
I
GLK
–
29.2
29.2
–
1.6
–
1.4
–
mA
mA
V
–
–
2.6
–
2.4
–
–
V
DS
= 50 V, I
D
= 29.2 mA
V
DS
= 50 V, I
D
= 150 mA
V
GS
= 2 V, I
D
= 200 mA
V
T
–
2.15
–
2.05
0.16
17.0
V
GSQ
R
ON
I
D, MAX
V
Maximum Drain Current
V
DS
= 7 V pulsed, pulse width 300 µs
–
–
A
2
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For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Absolute Maximum Ratings (Per Each Side of Symmetric Device)
5,6,7,8,9
Parameter
Absolute Maximum
130 V
Drain Source Voltage, V
DS
Gate Source Voltage, V
GS
–
10 to 3 V
Gate Current, I
G
29 mA
Storage Temperature Range
Case Operating Temperature Range
Channel Operating Temperature Range, T
CH
Absolute Maximum Channel Temperature
–
65°C to +150°C
–
40°C to +85°C
–
40°C to +225°C
+250°C
5. Exceeding
any one or combination of these limits may cause permanent damage to this device.
6. MACOM
does not recommend sustained operation above maximum operating conditions.
7. Operating
at drain source voltage V
DS
< 55 V will ensure
MTTF > 1 x 10
7
hours.
8. Operating
at nominal conditions with T
CH
≤
225°C will ensure
MTTF > 1 x 10
7
hours.
9. MTTF
may be estimated by the expression MTTF (hours) = A
e
[B + C/(T+273)]
where
T
is the channel temperature in degrees Celsius,
A
= 3.686,
B
=
–
35.00, and
C
= 25,416.
Thermal Characteristics
10
Parameter
Test Conditions
Symbol
Typical
Units
Thermal Resistance using
Finite Element Analysis
V
DS
= 50 V,
T
C
= 85
°
C, T
CH
= 225
°
C
0.56
°C/W
R
(
FEA)
Thermal Resistance using
Infrared Measurement of Die Surface Temperature
V
DS
= 50 V,
T
C
= 85
°
C, T
CH
= 225
°
C
0.45
°C/W
R
(
IR)
10. Case temperature measured using thermocouple embedded in heat
–
sink. Contact local applications support team for more details on this
measurement.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should be
used when handling these HBM Class 1A, CDM
Class C3 devices.
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Pulsed
4
Load
–
Pull Performance (Per Each Side of Symmetric Device)
Reference Plane at Device Leads
Maximum Output Power
V
DS
= 50 V, I
DQ
= 100 mA, T
C
= 25°C, P2.5dB
11
Z
SOURCE
(
)
Z
LOAD
(
)
AM/PM
13
D
Frequency
(GHz)
Gain
(dB)
P
OUT
(dBm)
P
OUT
(W)
(%)
(
)
0.9
1.4
2.0
2.5
2.7
5
–
j2.0
5
–
j4.6
5
–
j6.3
5
–
j11.0
5
–
j11.0
3.4
–
j0.4
2.6
–
j0.7
1.8
–
j1.8
1.5
–
j3.2
1.9
–
j3.8
19.3
16.0
14.4
12.9
12.3
53.5
53.3
53.5
53.5
53.4
222.6
215.6
222.6
222.6
220.9
58.3
62.7
61.3
60.6
59.0
0.3
0.5
–
3.4
–
6.4
–
9.6
Maximum Drain Efficiency
V
DS
= 50 V, I
DQ
= 100 mA, T
C
= 25°C, P2.5dB
12
Z
SOURCE
(
)
Z
LOAD
(
)
AM/PM
13
D
Frequency
(GHz)
Gain
(dB)
P
OUT
(dBm)
P
OUT
(W)
(%)
(
)
0.9
1.4
2.0
2.5
2.7
5
–
j2.0
5
–
j4.6
5
–
j6.3
5
–
j11.0
5
–
j11.0
5.4 + j3.0
2.5 + j1.6
1.8
–
j1.1
1.4
–
j2.3
1.1
–
j2.7
20.0
17.6
15.0
13.5
13.5
52.4
51.9
52.9
52.6
51.8
175.5
154.6
195.2
180.0
148.5
71.1
74.8
64.3
64.8
65.3
–
4.8
–
3.5
–
3.8
–
8.5
–
17.0
Impedance Reference
Z
SOURCE
= Measured impedance presented to the input of the
device at package reference plane.
Z
LOAD
= Measured impedance presented to the output of the
device at package reference plane.
11. Load
Impedance for optimum output power.
12. Load
Impedance for optimum efficiency.
13. AM/PM
are relative values.
Z
L
Z
S
4
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For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Pulsed
4
Load
–
Pull Performance (Per Each Side of Symmetric Device)
2.0 GHz
P2.5dB Loadpull Output Power Contours (dBm)
P2.5dB Loadpull Drain Efficiency Contours (%)
P2.5dB Loadpull Gain Contours (dB)
P2.5dB Loadpull AM/PM Contours (
°
)
Gain vs. Output Power
Drain Efficiency vs. Output Power
18
70
Z Peak Efficiency
17
16
15
14
13
60
Z Peak Power
50
40
30
20
10
0
12
Z Peak Efficiency
Z Peak Power
11
10
35
40
45
50
55
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Evaluation Test Fixture and Recommended Tuning Solution
1.95
–
2.05 GHz
J4
J3
I
G
S
(sense)
I
G
S
(sense)
I
DS(sense)
I
DS(sense)
R1
10
R6
5 m
V
GS
V
DS
C1
1
m
F
C2
0.1 uF
C3
10 pF
R2
3.1
C4
12 pF
C9
5.1 pF
C5
C6
1 uF
1 uF
C11
22 pF
RF
OUT
J2
RF
IN
J1
C7
0.5 pF
C15
12 pF
Q1
C8
0.6 pF
C14
0.6 pF
R3
100
C10
1.0 pF
C12
1.2 pF
R4
3.1
C13
0.5 pF
C19
5.1 pF
C20
12 pF
C21
1 uF
R5
10
C17
1
m
F
C18
0.1 uF
C16
10 pF
Description
Bias Sequencing
Parts measured on evaluation board (20
–
mil thick
RO4350). Matching is provided using a combination
of lumped elements and transmission lines as
shown in the simplified schematic above.
Turning the device ON
1. Set
V
GS
to pinch
–
off (V
P
).
2. Turn
on V
DS
to nominal voltage (50 V).
3. Increase
V
GS
until I
DS
current is reached.
4. Apply
RF power to desired level.
Recommended
placement, transmission lines, and details are
shown on the next page.
tuning
solution
component
Turning the device OFF
1. Turn
the RF power off.
2. Decrease
V
GS
down to V
P
pinch
–
off.
3. Decrease
V
DS
down to 0 V.
4. Turn
off V
GS
.
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Evaluation Test Fixture and Recommended Tuning Solution
1.95
–
2.05 GHz
VGS
VDS
C1
C2
C6
R6
R1
C4
C5
C3
R2
C7
C9
C8
C15
C11
Q1
RFIN
RFOUT
C12
C10
R3
C13
C14
C19
R4
C16
R5
C21
C20
C17
C18
PT-0026109_B
RO4350B 20 MIL 2 OZ
MAGX-100027-300C0P
TO272S-4I
Reference Designator
C1, C18
C2, C17
C3, C16
C4, C15, C20
C5, C6, C21
C7, C13
C8, C14
C9, C19
C10
Value
1.0 µF
0.1 µF
10 pF
12 pF
1 µF
Tolerance
+/
–
10 %
+/
–
10 %
+/
–
0.1 pF
+/
–
0.1 pF
+/
–
10 %
+/
–
0.1 pF
+/
–
0.1 pF
+/
–
0.1 pF
+/
–
0.1 pF
+/
–
0.1 pF
+/
–
0.1 pF
+/
–
1 %
Manufacturer
Murata
Murata
PPI
Part Number
GRM21BC72A105KE01L
GCD21BR72A104KA01L
0505C100BW151X
PPI
111N120BW501X
Murata
PPI
GRM55DR72E105KW01L
0505C0R5BW151X
1111N0R6BW501X
1111N5R1BW501X
0505C1R0BW151X
0505C220JW151X
0.5 pF
0.6 pF
5.1 pF
1 pF
PPI
PPI
PPI
C11
22 pF
1.2 pF
10
Ω
PPI
C12
PPI
0505C1R2BW151X
CRCW080510R0FKTA
CRCW08053R09FKEA
CRCW0805100RFKEA
RL7520WT
–
R005
–
F
MAGX
–
100027
–
300C0P
R1, R5
R2, R4
R3
Vishay Dale
Vishay Dale
Vishay Dale
Susumu
3.1
Ω
100
Ω
5 m
Ω
+/
–
1 %
+/
–
1 %
R6
+/
–
1 %
Q1
MACOM GaN Power Amplifier
RO4350, 20 mil, 2 oz. Cu, Au Finish
PCB
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Typical Performance Curves as Measured in the 1.95
–
2.05 GHz Evaluation Test Fixture:
Pulsed
4
2.0 GHz, V
DS
= 50 V, I
DQ
= 200 mA, T
C
= 25°C (Unless Otherwise Noted)
Gain vs. Output Power and Frequency
Drain Efficiency vs. Output Power and Frequency
60
18
1.95GHz
1.95GHz
17
2.0GHz
2.0GHz
50
2.05GHz
2.05GHz
16
40
15
14
13
12
11
10
30
20
10
0
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
60
Pout (dBm)
Pout (dBm)
Gain vs. Output Power and V
DS
Drain Efficiency vs. Output Power and V
DS
18
60
40 V
45 V
50 V
40 V
17
45 V
50
50 V
16
40
30
20
10
0
15
14
13
12
11
10
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
60
Pout (dBm)
Pout (dBm)
Gain vs. Output Power and I
DQ
Drain Efficiency vs. Output Power and I
DQ
18
60
170 mA
200 mA
230 mA
170 mA
200 mA
230 mA
17
50
16
40
15
14
13
12
11
10
30
20
10
0
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
60
Pout (dBm)
Pout (dBm)
8
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For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Typical Performance Curves as Measured in the 1.95
–
2.05 GHz Evaluation Test Fixture:
Pulsed
4
2.0 GHz, V
DS
= 50 V, I
DQ
= 200 mA, T
C
= 25°C (Unless Otherwise Noted)
Gain vs. Output Power and Tc
Drain Efficiency vs. Output Power and Tc
18
70
-40°C
25°C
85°C
-40°C
25°C
85°C
16
17
60
50
40
30
20
10
0
15
14
13
12
11
10
25
30
35
40
45
50
55
60
25
30
35
40
45
50
55
60
Pout (dBm)
Pout (dBm)
Drain Efficiency vs. Frequency
Gain vs. Frequency
70
16
65
60
55
50
45
40
15
14
13
12
11
10
1.90
1.95
2.00
2.05
2.10
1.90
1.95
2.00
2.05
2.10
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency
60
58
56
54
52
50
1.90
1.95
2.00
2.05
2.10
Frequency (GHz)
9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
Lead
–
Free TO
–
272S
–
4I Package Dimensions
†
†
Reference Application Note AN0004125 for lead
–
free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn.
10
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
DC
–
0018041
GaN Amplifier 50 V, 300 W
DC – 2.7 GHz
MAGX-100027-300C0P
Rev. V2
MACOM Technology Solutions Inc.
(“
MACOM
”).
All rights reserved.
These materials are provided in connection with MACOM
’
s products as a service to its customers and may be
used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate
agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these
materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to
specifications and product descriptions, which MACOM may make at any time, without notice. These materials
grant no license, express or implied, to any intellectual property rights.
THESE MATERIALS ARE PROVIDED “AS IS” WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED,
RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR
COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY
RESULT FROM USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully
indemnify MACOM for any damages resulting from such improper use or sale.
11
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For further information and support please visit:
DC
–
0018041
