MA-COM-MAGX-100027-300C0P

Part #MA-COM-MAGX-100027-300C0P
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MA-COM-MAGX-100027-300C0P
GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Features  
•
•
•
•
•
•
•
•
Suitable for Linear and Saturated Applications  
Pair of Isolated, Symmetric Amplifiers  
CW and Pulsed Operation: 300 W Output Power  
Internally Pre
–
Matched  
260°C Reflow Compatible  
50 V Operation  
100% RF Tested  
RoHS* Compliant  
Description  
Functional Schematic  
The MAGX
–
100027
–
300C0P is high power GaN on  
Si HEMT device optimized for DC
–
2.7 GHz  
frequency operation. The device supports both CW  
and pulsed operation with peak output power levels  
of 300 W (54.8 dBm) in a plastic package.  
RF
IN
/V
G  
RF
OUT
/V
D  
PAD  
The MAGX
–
100027
–
300C0P is ideally suited for a  
multitude of applications including military radio  
communications, digital cellular infrastructure, RF  
energy, avionics, test instrumentation and RADAR.  
RF
IN
/V
G  
RF
OUT
/V
D  
Typical Performance:  
•
V

DS

= 50 V, I

DQ

= 100 mA, T

C

= 25°C. One side  
Measured under pulsed load
–
pull at 2.5 dB  
Compression, 100 µs pulse width,1 ms period,  
10% duty cycle  
Pin Configuration  
1
2
3
4
5
RF

IN

/ V

G1  

RF

OUT

/ V

D1  

RF

IN

/ V

G2  

RF

OUT

/ V

D2  

Pad

3  

RF Input / Gate  
RF Output / Drain  
RF Input / Gate  
RF Output / Drain  
Ground / Source  
Frequency Output
 
Power

1  

Gain

2  

(dB)  
2

D  

(GHz)  
(dBm)  
(%)  
0.9  
1.4  
2.0  
2.5  
2.7  
53.5  
53.3  
53.5  
53.5  
53.4  
20.0  
17.6  
15.0  
13.5  
13.5  
71.1  
74.8  
64.3  
64.8  
65.3  
3. The
 
exposed pad centered on the package bottom must be  
connected to RF, DC and thermal ground.  
1. Load
 
impedance tuned for maximum output power.  
2. Load
 
impedance tuned for maximum drain efficiency.  
Ordering Information  
Part Number  
Package  
MAGX
–
100027
–
300C0P  
MAGX
–
100027
–
300CTP  
MAGX
–
1A0027
–
300C0P  
Bulk quantity  
Tape and Reel  
Sample board  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
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for additional data sheets and product information.  
For further information and support please visit:  
DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
RF Electrical Characteristics:
 
T

C

= 25
C, V

DS

= 50 V, I

DQ

= 200 mA  
Note: Performance in MACOM Evaluation Test Fixture, 50
Ω
system  
Parameter  
Small Signal Gain  
Test Conditions  
Pulsed

4

, 2 GHz  
Pulsed

4

, 2 GHz, 2.5 dB Gain Compression  
Pulsed

4

, 2 GHz, 2.5 dB Gain Compression  
Pulsed

4

, 2 GHz, 2.5 dB Gain Compression  
Pulsed

4

, 2 GHz  
Symbol Min.  
Typ.  
16.3  
14.0  
57.5  
55.5  
0.02  
0.01  
14.5  
57.5  
Max. Units  
G

SS  

G

SAT  

SAT  

–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
dB  
dBm  
%
Power Gain  
Saturated Drain Efficiency  
Saturated Output Power  
Gain Variation (
–
25
C to +85
C)  
Power Variation (
–
25
C to +85
C)  
Gain  
P

SAT  

dBm  
dB/
C  
dB/
C  
dB  
∆
G  
Pulsed

4

, 2 GHz  
∆
P2.5dB  
G

P  

Pulsed

4

, 2 GHz, P

IN

= 41.2 dBm  
Pulsed

4

, 2.0 GHz, P

IN

= 41.2 dBm  
All phase angles  
Drain Efficiency  
%
Ruggedness: Output Mismatch  
VSWR = 10:1, No Damage  
RF Electrical Specifications:
 
T

A

= 25
C, V

DS

= 50 V, I

DQ

= 200 mA  
Note: Performance in MACOM Production Test Fixture, 50
Ω
system  
Parameter  
Power Gain  
Test Conditions  
Symbol Min.  
Typ.  
14  
Max. Units  
Pulsed

4

, 2 GHz, 2.5 dB Gain Compression  
Pulsed

4

, 2 GHz, 2.5 dB Gain Compression  
Pulsed

4

, 2 GHz, 2.5 dB Gain Compression  
Pulsed

4

, 2 GHz, P

IN

= 41.2 dBm  
G

SAT  

SAT  

P

SAT  

G

P  

13  
52  
54  
13  
52  
–
–
–
–
–
dB  
%
Saturated Drain Efficiency  
Saturated Output Power  
Gain  
57.5  
55.4  
14.2  
57.5  
dBm  
dB  
Drain Efficiency  
Pulsed

4

, 2 GHz, P

IN

= 41.2 dBm  
dB  
4. Pulse
 
details: 100 µs pulse width, 1 ms period, 10% Duty Cycle.  
DC Electrical Characteristics (Per Each Side of Symmetric Device) T

A

= 25°C  
Parameter  
Test Conditions  
V

GS

=
–
8 V, V

DS

= 130 V  
V

GS

=
–
8 V, V

DS

= 0 V  
Symbol Min.  
Typ.  
–
Max. Units  
Drain
–
Source Leakage Current  
Gate
–
Source Leakage Current  
Gate Threshold Voltage  
Gate Quiescent Voltage  
On Resistance  
I

DLK  

I

GLK  

–
29.2  
29.2  
–
1.6  
–
1.4  
–
mA  
mA  
V
–
–
2.6  
–
2.4  
–
–
V

DS

= 50 V, I

D

= 29.2 mA  
V

DS

= 50 V, I

D

= 150 mA  
V

GS

= 2 V, I

D

= 200 mA  
V

T  

–
2.15  
–
2.05  
0.16  
17.0  
V

GSQ  

R

ON  

I

D, MAX  

V
Maximum Drain Current  
V

DS

= 7 V pulsed, pulse width 300 µs  
–
–
A
2
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for additional data sheets and product information.  
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DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Absolute Maximum Ratings (Per Each Side of Symmetric Device)

5,6,7,8,9  

Parameter  
Absolute Maximum  
130 V  
Drain Source Voltage, V

DS  

Gate Source Voltage, V

GS  

–
10 to 3 V  
Gate Current, I

G  

29 mA  
Storage Temperature Range  
Case Operating Temperature Range  
Channel Operating Temperature Range, T

CH  

Absolute Maximum Channel Temperature  
–
65°C to +150°C  
–
40°C to +85°C  
–
40°C to +225°C  
+250°C  
5. Exceeding
 
any one or combination of these limits may cause permanent damage to this device.  
6. MACOM
 
does not recommend sustained operation above maximum operating conditions.  
7. Operating
 
at drain source voltage V

DS

< 55 V will ensure
 
MTTF > 1 x 10

7

hours.  
8. Operating
 
at nominal conditions with T

CH

≤
225°C will ensure
 
MTTF > 1 x 10

7

hours.  
9. MTTF
 
may be estimated by the expression MTTF (hours) = A
e

[B + C/(T+273)]

where
T
is the channel temperature in degrees Celsius,  
A
= 3.686,
B
=
–
35.00, and
C
= 25,416.  
Thermal Characteristics

10  

Parameter  
Test Conditions  
Symbol  
Typical  
Units  
Thermal Resistance using  
Finite Element Analysis  
V

DS

= 50 V,  
T

C

= 85
°
C, T

CH

= 225
°
C  
0.56  
°C/W  
R

(
FEA)  
Thermal Resistance using  
Infrared Measurement of Die Surface Temperature  
V

DS

= 50 V,  
T

C

= 85
°
C, T

CH

= 225
°
C  
0.45  
°C/W  
R

(
IR)  
10. Case temperature measured using thermocouple embedded in heat
–
sink. Contact local applications support team for more details on this  
measurement.  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Static Sensitivity  
Gallium Nitride Circuits are sensitive to electrostatic  
discharge (ESD) and can be damaged by static  
electricity. Proper ESD control techniques should be  
used when handling these HBM Class 1A, CDM  
Class C3 devices.  
3
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for additional data sheets and product information.  
For further information and support please visit:  
DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Pulsed

4

Load
–
Pull Performance (Per Each Side of Symmetric Device)  
Reference Plane at Device Leads  
Maximum Output Power  
V

DS

= 50 V, I

DQ

= 100 mA, T

C

= 25°C, P2.5dB  
11  
Z

SOURCE  

(
)  
Z

LOAD  

(
)  
AM/PM

13  

D  

Frequency  
(GHz)  
Gain  
(dB)  
P

OUT  

(dBm)  
P

OUT  

(W)  
(%)  
(
)  
0.9  
1.4  
2.0  
2.5  
2.7  
5
–
j2.0  
5
–
j4.6  
5
–
j6.3  
5
–
j11.0  
5
–
j11.0  
3.4
–
j0.4  
2.6
–
j0.7  
1.8
–
j1.8  
1.5
–
j3.2  
1.9
–
j3.8  
19.3  
16.0  
14.4  
12.9  
12.3  
53.5  
53.3  
53.5  
53.5  
53.4  
222.6  
215.6  
222.6  
222.6  
220.9  
58.3  
62.7  
61.3  
60.6  
59.0  
0.3  
0.5  
–
3.4  
–
6.4  
–
9.6  
Maximum Drain Efficiency  
V

DS

= 50 V, I

DQ

= 100 mA, T

C

= 25°C, P2.5dB  
12  
Z

SOURCE  

(
)  
Z

LOAD  

(
)  
AM/PM

13  

D  

Frequency  
(GHz)  
Gain  
(dB)  
P

OUT  

(dBm)  
P

OUT  

(W)  
(%)  
(
)  
0.9  
1.4  
2.0  
2.5  
2.7  
5
–
j2.0  
5
–
j4.6  
5
–
j6.3  
5
–
j11.0  
5
–
j11.0  
5.4 + j3.0  
2.5 + j1.6  
1.8
–
j1.1  
1.4
–
j2.3  
1.1
–
j2.7  
20.0  
17.6  
15.0  
13.5  
13.5  
52.4  
51.9  
52.9  
52.6  
51.8  
175.5  
154.6  
195.2  
180.0  
148.5  
71.1  
74.8  
64.3  
64.8  
65.3  
–
4.8  
–
3.5  
–
3.8  
–
8.5  
–
17.0  
Impedance Reference  
Z

SOURCE

= Measured impedance presented to the input of the  
device at package reference plane.  
Z

LOAD

= Measured impedance presented to the output of the  
device at package reference plane.  
11. Load
 
Impedance for optimum output power.  
12. Load
 
Impedance for optimum efficiency.  
13. AM/PM
 
are relative values.  
Z

L  

Z

S  

4
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for additional data sheets and product information.  
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DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Pulsed

4

Load
–
Pull Performance (Per Each Side of Symmetric Device)  
2.0 GHz  
P2.5dB Loadpull Output Power Contours (dBm)  
P2.5dB Loadpull Drain Efficiency Contours (%)  
P2.5dB Loadpull Gain Contours (dB)  
P2.5dB Loadpull AM/PM Contours (
°
)  
Gain vs. Output Power  
Drain Efficiency vs. Output Power  
18  
70  
Z Peak Efficiency  
17  
16  
15  
14  
13  
60  
Z Peak Power  
50  
40  
30  
20  
10  
0
12  
Z Peak Efficiency  
Z Peak Power  
11  
10  
35  
40  
45  
50  
55  
35  
40  
45  
50  
55  
Output Power (dBm)  
Output Power (dBm)  
5
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DC
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0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Evaluation Test Fixture and Recommended Tuning Solution
 
1.95
–
2.05 GHz  
J4  
J3  
I

G
S
(sense)  

I

G
S
(sense)  

I

DS(sense)  

I

DS(sense)  

R1  
10
  
R6  
5 m
  
V

GS  

V

DS  

C1  
1
m
F  
C2  
0.1 uF  
C3  
10 pF  
R2  
3.1
  
C4  
12 pF  
C9  
5.1 pF  
C5  
C6  
1 uF  
1 uF  
C11  
22 pF  
RF

OUT  

J2  
RF

IN  

J1  
C7  
0.5 pF  
C15  
12 pF  
Q1  
C8  
0.6 pF  
C14  
0.6 pF  
R3  
100
  
C10  
1.0 pF  
C12  
1.2 pF  
R4  
3.1
  
C13  
0.5 pF  
C19  
5.1 pF  
C20  
12 pF  
C21  
1 uF  
R5  
10
  
C17  
1
m
F  
C18  
0.1 uF  
C16  
10 pF  
Description  
Bias Sequencing  
Parts measured on evaluation board (20
–
mil thick  
RO4350). Matching is provided using a combination  
of lumped elements and transmission lines as  
shown in the simplified schematic above.  
Turning the device ON  
1. Set
 
V

GS

to pinch
–
off (V

P

).  
2. Turn
 
on V

DS

to nominal voltage (50 V).  
3. Increase
 
V

GS

until I

DS

current is reached.  
4. Apply
 
RF power to desired level.  
Recommended  
placement, transmission lines, and details are  
shown on the next page.  
tuning  
solution  
component  
Turning the device OFF  
1. Turn
 
the RF power off.  
2. Decrease
 
V

GS

down to V

P

pinch
–
off.  
3. Decrease
 
V

DS

down to 0 V.  
4. Turn
 
off V

GS

.  
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
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for additional data sheets and product information.  
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DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Evaluation Test Fixture and Recommended Tuning Solution
 
1.95
–
2.05 GHz  
VGS  
VDS  
C1  
C2  
C6  
R6  
R1  
C4  
C5  
C3  
R2  
C7  
C9  
C8  
C15  
C11  
Q1  
RFIN  
RFOUT  
C12  
C10  
R3  
C13  
C14  
C19  
R4  
C16  
R5  
C21  
C20  
C17  
C18  
PT-0026109_B  
RO4350B 20 MIL 2 OZ  
MAGX-100027-300C0P  
TO272S-4I  
Reference Designator  
C1, C18  
C2, C17  
C3, C16  
C4, C15, C20  
C5, C6, C21  
C7, C13  
C8, C14  
C9, C19  
C10  
Value  
1.0 µF  
0.1 µF  
10 pF  
12 pF  
1 µF  
Tolerance  
+/
–
10 %  
+/
–
10 %  
+/
–
0.1 pF  
+/
–
0.1 pF  
+/
–
10 %  
+/
–
0.1 pF  
+/
–
0.1 pF  
+/
–
0.1 pF  
+/
–
0.1 pF  
+/
–
0.1 pF  
+/
–
0.1 pF  
+/
–
1 %  
Manufacturer  
Murata  
Murata  
PPI  
Part Number  
GRM21BC72A105KE01L  
GCD21BR72A104KA01L  
0505C100BW151X  
PPI  
111N120BW501X  
Murata  
PPI  
GRM55DR72E105KW01L  
0505C0R5BW151X  
1111N0R6BW501X  
1111N5R1BW501X  
0505C1R0BW151X  
0505C220JW151X  
0.5 pF  
0.6 pF  
5.1 pF  
1 pF  
PPI  
PPI  
PPI  
C11  
22 pF  
1.2 pF  
10
Ω
 
PPI  
C12  
PPI  
0505C1R2BW151X  
CRCW080510R0FKTA  
CRCW08053R09FKEA  
CRCW0805100RFKEA  
RL7520WT
–
R005
–
F  
MAGX
–
100027
–
300C0P  
R1, R5  
R2, R4  
R3  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Susumu  
3.1
Ω  
100
Ω  
5 m
Ω  
+/
–
1 %  
+/
–
1 %  
R6  
+/
–
1 %  
Q1  
MACOM GaN Power Amplifier  
RO4350, 20 mil, 2 oz. Cu, Au Finish  
PCB  
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
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DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Typical Performance Curves as Measured in the 1.95
–
2.05 GHz Evaluation Test Fixture:  
Pulsed

4

2.0 GHz, V

DS

= 50 V, I

DQ

= 200 mA, T

C

= 25°C (Unless Otherwise Noted)  
Gain vs. Output Power and Frequency  
Drain Efficiency vs. Output Power and Frequency  
60  
18  
1.95GHz  
1.95GHz  
17  
2.0GHz  
2.0GHz  
50  
2.05GHz  
2.05GHz  
16  
40  
15  
14  
13  
12  
11  
10  
30  
20  
10  
0
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
60  
Pout (dBm)  
Pout (dBm)  
Gain vs. Output Power and V

DS  

Drain Efficiency vs. Output Power and V

DS  

18  
60  
40 V  
45 V  
50 V  
40 V  
17  
45 V  
50  
50 V  
16  
40  
30  
20  
10  
0
15  
14  
13  
12  
11  
10  
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
60  
Pout (dBm)  
Pout (dBm)  
Gain vs. Output Power and I

DQ  

Drain Efficiency vs. Output Power and I

DQ  

18  
60  
170 mA  
200 mA  
230 mA  
170 mA  
200 mA  
230 mA  
17  
50  
16  
40  
15  
14  
13  
12  
11  
10  
30  
20  
10  
0
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
60  
Pout (dBm)  
Pout (dBm)  
8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
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for additional data sheets and product information.  
For further information and support please visit:  
DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Typical Performance Curves as Measured in the 1.95
–
2.05 GHz Evaluation Test Fixture:  
Pulsed

4

2.0 GHz, V

DS

= 50 V, I

DQ

= 200 mA, T

C

= 25°C (Unless Otherwise Noted)  
Gain vs. Output Power and Tc  
Drain Efficiency vs. Output Power and Tc  
18  
70  
-40°C  
25°C  
85°C  
-40°C  
25°C  
85°C  
16  
17  
60  
50  
40  
30  
20  
10  
0
15  
14  
13  
12  
11  
10  
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
60  
Pout (dBm)  
Pout (dBm)  
Drain Efficiency vs. Frequency  
Gain vs. Frequency  
70  
16  
65  
60  
55  
50  
45  
40  
15  
14  
13  
12  
11  
10  
1.90  
1.95  
2.00  
2.05  
2.10  
1.90  
1.95  
2.00  
2.05  
2.10  
Frequency (GHz)  
Frequency (GHz)  
Output Power vs. Frequency  
60  
58  
56  
54  
52  
50  
1.90  
1.95  
2.00  
2.05  
2.10  
Frequency (GHz)  
9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
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for additional data sheets and product information.  
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GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
Lead
–
Free TO
–
272S
–
4I Package Dimensions

†
 

†
Reference Application Note AN0004125 for lead
–
free solder reflow recommendations.  
Meets JEDEC moisture sensitivity level 3 requirements.  
Plating is Matte Sn.  
10  
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit

for additional data sheets and product information.  
For further information and support please visit:  
DC
–
0018041  

GaN Amplifier 50 V, 300 W  
DC – 2.7 GHz  
MAGX-100027-300C0P  
Rev. V2  
MACOM Technology Solutions Inc.
(“
MACOM
”).
All rights reserved.  
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’
s products as a service to its customers and may be  
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11  
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit

for additional data sheets and product information.  
For further information and support please visit:  
DC
–
0018041