MASPOWER-MS10N100HGT1
| Part # | MASPOWER-MS10N100HGT1 |
| Download | MASPOWER-MS10N100HGT1 |
MS10N100HGC0/T1/E0
Features
Low gate charge
Low Crss (typical 13pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
Applications
High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
LED power supplies
Absolute Ratings
(
T
c=25
℃
)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
1000
10
V
A
I
D
Drain Current -continuous
T=25
℃
T=100
℃
6.0*
A
Drain Current – pulse
(
note 1
)
I
DM
36
A
V
Gate-Source Voltage
V
GSS
±30
Single Pulsed Avalanche Energy
E
AS
I
AR
858
10
mJ
A
(
note 2
)
Avalanche Current
(
note 1
)
Repetitive Avalanche Current
(
note 1
)
E
AR
27.7
4.1
mJ
V/ns
W
Peak Diode Recovery dv/dt
(
note 3
)
Power Dissipation(TO-247/TO-263)
Power Dissipation(TO-220F)
Operating and Storage Temperature
Range
dv/dt
186.5
67.9
PD
T
J
,T
STG
T
L
W
-55~+150
300
℃
℃
Maximum Lead Temperature for
Soldering Purposes
H1.01
Maspower
1
MS10N100HGC0/T1/E0
Electrical Characteristics
(T
CASE
=25
℃
unless otherwise specified)
Parameter
Symbol Tests
conditions Min
Typ Max
Units
Off-Characteristics
Drain-Source Voltage
BV
DSS
I
D
=250uA,V
GS
=0V
1000
–
–
V
I
D
=250uA,referenced to
Breakdown Voltage
–
0.98
–
V/
℃
25
℃
V
DS
=900V,V
GS
=0V,T
C
=
25
℃
Temperature
△
BV
DSS
/
Coefficient
△
T
J
–
–
–
–
1
uA
uA
Zero Gate Voltage
Drain Current
V
DS
=720V,T
C
=125
℃
10
Gate-body leakage
current,
forward
I
GSSF
V
DS
=0V,V
GS
=30V
–
–
–
–
100
nA
nA
Gate-body leakage
current,reverse
I
GSSR
V
DS
=0V,V
GS
=30V
-100
On-Characteristics
Gate Threshold
Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
3
–
–
5
V
Ω
S
Static Drain-Source
On-Resistance
Forward
R
DS(ON)
V
GS
=10V,I
D
=4.5A 25
℃
1.35 1.6
V
DS
=40V,I
D
=4.5A(note
gfs
–
9.5
–
Transconductance
4)
Dynamic Characteristics
Gate resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Rg
F=1.0MHZ open drain
0.5
–
3
Ω
Ciss
Coss
1200 2150 2830
pF
VDS=25V,
VGS=0V,
I=1.0MHZ
100 189 246
pF
Crss
5
13
17
pF
Switching Characteristics
td(on)
Turn-On delay time
Turn-On rise time
Turn-Off delay time
Turn-Off Fall time
Total Gate Charge
Gate-Source charge
Gate-Drain charge
–
–
–
–
–
–
–
53
121
ns
ns
tr
td(off)
tf
116 235
VDD=450V,ID=9A,RG
=25Ω(note 4,5)
97
69
43
15
21
199
171
56
ns
ns
Qg
nC
nC
nC
V
DS
=720V,
I
D
=9A,
Qgs
Qgd
40
V
GS
=10V(note4,5)
50
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous
Drain -Source Diode
Forward Current
Maximum Pulsed
Is
–
–
10
A
A
ISM
–
–
36
H1.01
Maspower
2
MS10N100HGC0/T1/E0
Drain-Source Diode
Forward Current
Drain-Source Diode
Forward Voltage
Reverse recovery time
Reverse recovery
charge
VSD
trr
VGS=0V,IS=9A
–
–
–
–
1.4
V
539 1200
6.41 12
ns
uC
VGS=0V,IS=9A
dIF/dt=100A/us(note 4)
Qrr
Value
Parameter
Symbol
Unit
TO-247
/TO-263
TO-220F
1.84
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rth(j-c)
Rth(j-A)
0.67
40
/W
/W
℃
62.5
℃
Notes:
1:Pulse width limited by maximum junction temperature
2:L=20mH,I
AS
=10A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25
℃
3:I
SD
≤10A,di/dt≤200A/us,V
DD
≤BV
DSS
,Starting T
J
=25
℃
4:Pulse
T
est:Pulse Width≤200us,Duty Cycle≤2%
5:Essentially independent of operating temperature
Order information
Order codes
Package
Packaging
MS10N100HGC0
MS10N100HGT1
MS10N100HGE0
TO-247
TO-220F
TO-263
Tube
Tube
Tube
H1.01
Maspower
3
MS10N100HGC0/T1/E0
Electrical Characteristics
H1.01
Maspower
4
MS10N100HGC0/T1/E0
H1.01
Maspower
5
MS10N100HGC0/T1/E0
H1.01
Maspower
6
MS10N100HGC0/T1/E0
Package Mechanical DATA
H1.01
Maspower
7
MS10N100HGC0/T1/E0
H1.01
Maspower
8
MS10N100HGC0/T1/E0
H1.01
Maspower
9
