MASPOWER-MS10N120HGT1

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

Features  



V

DS

=1200V,I

D

=10A  

R

DS(on)

<2Ω @ V

GS

=10V  

High density cell design for ultra low Rdson  

Low gate charge  









Improved dv/dt capability  

RoHS product  

Applications  



High Voltage Switched-mode and  

resonant-mode power supplies  

High Voltage Pulse Power Applications  

High Voltage Discharge circuits in  

Lasers Pulsers, Spark Igniters, RF  

Generators  









High Voltage DC-DC converters  

High Voltage DC-AC inverters  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Limit  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DSS  

V

GSS  

1200  

V

V

±

30  

Drain Current-continuous  

Drain Current-pulse(note1)  

I

D  

10  

15  

A

A

I

DM  

Single Pulsed Avalanche Energy  

(note2)  

E

AS  

PD  

30  

430  

mJ  

Maximum Power Dissipation  

(TO-247)  

Maximum Power Dissipation  

(TO-263)  

PD  

277  

W

Maximum Power Dissipation  

(TO-220F)  

PD  

67.9  

Operating and Storage  

Temperature Range  

Maximum lead temperature for  

soldering purposes  

T

J

,T

STG  

TL  

-55~+175  

300  

℃

℃

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

H1.01  

Maspower  

1

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

Parameter  

Symbol Tests

 

conditions Min

 

Typ Max

 

Units  

Drain-Source Voltage  

BV

DSS  

I

DSS  

I

D

=250uA,V

GS

=0V 1200  

–

–

–

V

Zero Gate Voltage Drain  

Current  

V

DS

=V

DSS

,V

GS

=0V  

–

–

1

μA  

Gate-Body Leakage  

Current  

I

GSS  

V

GS

=

±

30V

，

V

DS

=0V  

–

±

100 nA  

On-Characteristics  

Gate Threshold Voltage  

V

GS(th)  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V,I

D

=1A  

2.5  

–

–

5.5  

–

V

Static Drain-Source  

On-Resistance  

R

DS(ON)  

2

Ω

Forward  

V

DS

=20V,I

D

=5A  

(note3)  

g

fs  

–

13  

–

S

Transconductance  

Dynamic Characteristics  

Input capacitance  

C

iss  

–

–

1871  

153  

–

–

pF  

pF  

V

DS

=25V, V

GS

=0V,  

f=1.0MHZ  

Output capacitance  

C

oss  

Reverse transfer  

capacitance  

C

rss  

–

9

–

pF  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Typ Max

 

Units  

Switching-Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off rise time  

t

d(on)  

–

–

–

–

25  

33  

–

–

–

–

ns  

ns  

ns  

ns  

t

r  

t

d(Off)  

t

f  

V

DS

=600V,I

D

=5A,  

V

GS

=10V (note3,4)  

150  

50  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

Q

g  

–

–

–

41  

11  

13  

–

–

–

nC  

nC  

nC  

V

DS

=600V,I

D

=5A,  

V

GS

=10V (note3,4)  

Q

gs  

Q

gd  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous  

Drain-Source Diode  

Forward Curret  

V

SD  

V

GS

=0V,I

S

=10A  

–

–

1.2  

V

Diode Forward Current  

Reverse recovery time  

I

S  

TC=25

℃  

–

–

–

10  

–

A

Trr  

I

S

=5A,dI/dT=100A/μS  

530  

nS  

H1.01  

Maspower  

2

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

VR=100V,VGS=0V  

(note4)  

Reverse recovery charge  

Qrr  

–

3.53  

–

μC  

Thermal Characteristic  

Value  

TO-263 TO-247 TO-220F  

Parameter  

Symbol  

Unit  

Thermal Resistance,junction

 

to  

℃

/W  

℃

R

th

(j-C)  

R

th

(j-A)  

0.45  

40  

0.35  

36  

1.84  

62.5  

Case  

Thermal Resistance,junction

 

to  

Ambient  

/W  

Notes:  

1. Repetitive

 

Rating : Pulse width limited by maximum junction temperature  

2. L

 

= 15 mH, IAS = 2 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  

3. Pulse

 

T

est : Pulse width ≤ 300us, Duty cycle ≤ 2%  

4. Essentially

 

independent of operating temperature  

Order information  

Order codes  

Package  

Packaging  

MS10N120HGC0  

MS10N120HGT1  

MS10N120HGE0  

TO-247  

TO-220F  

TO-263  

Tube  

Tube  

Tube  

H1.01  

Maspower  

3

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

Electrical Characteristics  

H1.01  

Maspower  

4

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

H1.01  

Maspower  

5

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

Package Mechanical DATA  

H1.01  

Maspower  

6

MS10N120HGC0/T1/E0  

Planar Process N-Channel MOS  

H1.01  

Maspower  

7