MASPOWER-MS120N25HGC0

MS120N25HGC0  

Features  



V

DS

=250V,I

D

=120A  

R

DS(on)

=15mΩ  





Low gate charge  

Improved dv/dt capability  

Applications  









High Efficiency Synchronous Rectification in SMPS  

Uninterruptible Power Supply  

High Speed Power Switching  

Hard Switched and High Frequency Circuits  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Limit  

Unit  

Drain-Source Voltage  

V

DSS  

250  

V

Gate-Source Voltage  

Drain Current-continuous  

Drain Current-pulse  

V

GSS  

I

D  

±

30  

120  

480  

800  

24  

V

A

I

DM  

A

Single Pulsed Avalanche Energy  

Peak Diode Recovery dv/dt  

E

AS  

dv/dt  

mJ  

V/ns  

PD  

375  

Maximum Power Dissipation  

TC=25

℃  

TC=100

℃  

W

187.5  

Operating and Storage  

Temperature Range  

T

J

,T

STG  

-55~+175  

℃

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min Typ

 

Max Units  

Drain-Source Voltage  

BV

DSS  

I

DSS  

I

D

=250μA,V

GS

=0V  

V

DS

=V

DSS

,V

GS

=0V  

250  

–

–

–

–

V

Zero Gate Voltage Drain  

Current  

20  

μA  

Gate-Body Leakage  

Current  

±

I

GSS  

V

GS

=

±

30V

，

V

DS

=0V  

–

–

nA  

V

100  

On-Characteristics  

Gate Threshold Voltage  

V

GS(th)  

V

DS

=V

GS

,I

D

=250μA  

3.0  

4.0 5.0  

H1.02  

Maspower  

1

MS120N25HGC0  

Static Drain-Source  

On-Resistance  

R

DS(ON)  

V

GS

=10V,I

D

=60A  

–

15  

18 mΩ  

Dynamic Characteristics  

Input capacitance  

C

iss  

–

–

10500  

600  

–

–

pF  

pF  

V

DS

=25V,  

V

GS

=0V,  

Output capacitance  

C

oss  

f=1.0MHZ  

Reverse transfer  

capacitance  

C

rss  

–

180  

–

pF  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Typ Max

 

Units  

Switching-Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off rise time  

t

d(on)  

–

–

–

–

33  

154  

55  

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=125V,  

I

D

=60A,  

t

r  

t

d(Off)  

t

f  

V

GS

=10V  

109  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

Q

g  

–

–

–

130  

22  

–

–

–

nC  

nC  

nC  

V

DS

=125V,  

I

D

=60A,  

Q

gs  

Q

gd  

V

GS

=10V  

38  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous  

Drain-Source Diode  

Forward Curret  

V

SD  

V

GS

=0V,I

S

=60A  

–

–

1.3  

V

Diode Forward Current  

Reverse recovery time  

Reverse recovery charge  

I

S  

TC=25

℃  

–

–

–

–

120  

A

Trr  

Qrr  

180  

1400  

nS  

nC  

I

S

=60A,  

dI/dT=100A/μS  

Thermal Characteristic  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance,junction

 

to Case  

Thermal Resistance,junction

 

to Ambient  

R

th

(j-C)  

0.4  

40  

℃

/W  

R

th

(j-A)  

℃

/W  

Notes:  

1. Pulse

 

T

est

：

Pulse Width ≤400μs,Duty Cycle≤2

％  

2. Limited

 

by Tjmax,starting Tj=25

℃

,L=0.5mH,VGS=10V  

H1.02  

Maspower  

2

MS120N25HGC0  

Electrical Characteristics  

H1.02  

Maspower  

3

MS120N25HGC0  

H1.02  

Maspower  

4

MS120N25HGC0  

Package Mechanical DATA  

H1.02  

Maspower  

5