MASPOWER-MS12N100FC

MS12N100FC/FE  

Features  













Low gate charge  

Low C

rss

(typ 13pF)  

Fast switchin  

100% avalanche tested  

Improved dv/dt capability  

RoHS product  

Applications  







High frequency switching mode power supply  

Electronic ballast based on half bridge  

LED power supplies  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DSS  

1000  

V

12  

A

A

I

D

T=25

℃

 

T=100

℃  

Drain Current-continuous  

8

Drain Current-pulse  

(note 1)  

I

DM  

64*  

A

V

Gate-Source Voltage  

V

GS  

±30  

Single pulse avalanche  

energy  

E

AS  

858  

mJ  

(note 2)  

Avalanche Curren

t

（

note 1

）  

Repetitive Avalanche  

Energy(note 1)  

I

AR  

12  

A

E

AR  

27.7  

mJ  

PD  

TC=25

℃  

Derate above  

25

℃  

272  

W

Power Dissipation  

(MS12N100FC)  

2.17  

100  

W/

℃  

PD  

W

Power Dissipation  

(MS12N100FE)  

TC=25

℃  

Derate above  

25

℃  

0.8  

-55~+150  

300  

W/

℃  

℃

Operating and Storage  

Temperature Range  

Maximum Lead  

Temperature for Soldering  

Purposes  

T

J

,T

STG  

T

L  

℃

*Drain current limited by maximum junction temperature  

H1.03  

Maspower  

1

MS12N100FC/FE  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max Units  

Drain-Source Voltage  

BV

DSS  

I

D

=250μA,V

GS

=0V 1000  

–

–

–

V

∆BV

DSS

/∆ I

D

=250μA,referenced  

Breakdown Voltage  

Temperature Coefficient  

–

0.98  

V/

℃  

TJ  

to 25

℃  

V

DS

=800V,V

GS

=0V

，  

T

C

=25

℃  

–

–

–

–

1

μA  

μA  

Zero Gate Voltage Drain  

Current  

I

DSS  

V

DS

=720V,T

C

=125

℃

 

10  

Gate body leakage  

current  

I

GSS  

V

DS

=0V,V

GS

=

±

30V  

–

–

±

100 nA  

On-Characteristics  

Gate Threshold Voltage  

V

GS(th)  

V

DS

=V

GS

,I

D

=250μA  

3.0  

–

–

5.0  

V

Static Drain-Source  

On-Resistance  

V

GS

=10V,I

D

=6A

，  

T

C

=25

℃  

R

DS(ON)  

1.18 1.35  

Ω

Forward  

V

DS

=40V,I

D

=6A  

(note 4)  

g

FS  

–

9.5  

–

S

Transconductance  

Dynamic Characteristics  

Input capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

2150 2830

 

pF  

V

DS

=25V,  

V

GS

=0V,  

Output capacitance  

189 246  

13 17  

pF  

pF  

f=1.0MHZ  

Reverse transfer  

capacitance  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max

 

Units  

Switching-Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off rise time  

t

d(on)  

–

–

–

–

53 121  

116 235  

97 199  

69 171  

ns  

ns  

ns  

ns  

V

DD

=600V,I

D

=12A,  

R

GEN

=25Ω  

t

r  

t

d(Off)  

t

f  

(note 4,5)  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

Q

g  

–

–

–

43  

15  

21  

56  

–

nC  

nC  

nC  

V

DS

=800V,I

D

=12A,  

V

GS

=10V  

Q

gs  

Q

gd  

(note 4,5)  

–

H1.03  

Maspower  

2

MS12N100FC/FE  

Drain-Source Diode Characteristics and Maximum Ratings  

Diode Forward Voltage  

(note 3)  

V

SD  

I

SM  

I

S  

V

GS

=0V,I

S

=12A  

–

–

–

–

1.4  

48  

12  

V

A

A

Maximum Pulsed  

Drain-Source  

–

–

–

–

Diode Forward Current  

Maximum Continuous  

Drain Source Diode  

Forward Current  

Reverse recovery time  

t

rr  

–

–

539  

–

–

ns  

V

GS

=0V,  

I

S

=8A dI

F

/dt=100A/μs  

(note 4)  

Reverse recovery charge  

Q

rr  

6.41  

μC  

Thermal Characteristic  

Value  

MS12N100FC MS12N100FE  

Parameter  

Symbol  

Unit  

Thermal Resistance,junction  

to Case  

R

th

(j-C)  

R

th

(j-A)  

0.46  

40  

1.25  

62.5  

℃

/W  

℃

/W  

Thermal Resistance, Junction  

to Ambient  

Order Messag  

Order codes  

MS12N100FC  

MS12N100FE  

Notes:  

Package  

Packaging  

Tube  

TO-247  

TO-263  

Tube  

1. Pulse

 

width limited by maximum junction temperature  

2. L=20mH,

 

I

AS

=12A, V

DD

=50V, R

G

=25 Ω,Starting T

J

=25

℃

 

3. I

SD

≤12A,di/dt ≤300A/µs,V

DD

≤BV

DSS

, Starting T

J

=25

℃  

4. Pulse

 

T

est

：

Pulse Width ≤300µs,Duty Cycle≤2

％  

5. Essentially

 

independent of operating temperature  

H1.03  

Maspower  

3

MS12N100FC/FE  

ELECTRICAL CHARACTERISTICS (curves)  

H1.03  

Maspower  

4

MS12N100FC/FE  

H1.03  

Maspower  

5

MS12N100FC/FE  

PACKAGE MECHANICAL DATA  

H1.03  

Maspower  

6