MASPOWER-MS13N20HGD0

MS13N20HGD0  

Features  



Low gate charge  



Low Crss (typical 25pF )  



Fast switching  



100% avalanche tested  



Improved dv/dt capability  



RoHS product  

Applications  



High efficiency switch  

mode power supplies  



Electronic lamp ballasts  

based on half bridge  



UPS  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

Drain Current -continuous  

Drain Current – pulse  

V

DSS  

I

D  

200  

13  

V

A

I

DM  

52  

A

Gate-Source Voltage  

V

GSS  

E

AS  

PD  

±30  

259  

140  

V

Single Pulsed Avalanche Energy  

Power Dissipation  

mJ  

W

Operating and Storage  

Temperature Range  

Tj,T

STG  

dv/dt  

T

L  

-55~+175  

5.5  

℃

V/ns  

℃

Peak Diode Recovery dv/dt  

Maximum Lead Temperature for  

Soldering Purposes  

300  

*Drain current limited by maximum junction temperature  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max Units  

Off-Characteristics  

Drain-Source Voltage

 

BV

DSS  

I

D

=250μA,V

GS

=0V  

V

DS

=200V,V

GS

=0V  

200  

–

–

–

–

V

μA  

Drain cut-off current  

Gate-body leakage  

current,forward  

I

DSS  

1

I

GSSF  

V

DS

=0V,V

GS

=30V  

V

DS

=0V,V

GS

=-30V  

–

–

–

–

100  

nA  

nA  

Gate-body leakage  

current,reverse  

I

GSSR  

-100  

H1.01  

Maspower  

1

MS13N20HGD0  

On-Characteristics  

Gate Threshold  

Voltage  

V

GS(th)  

R

DS(ON)  

Gfs  

V

DS

=V

GS

,I

D

=250uA  

2

80  

–

–

4

V

mΩ  

S

Static Drain-Source  

On-Resistance  

Forward  

V

GS

=10V,I

D

=6.5A  

V

DS

=40V,I

D

=6..5A  

120 150  

14.5  

–

Transconductance  

Dynamic Characteristics  

Input capacitance  

Output capacitance  

Reverse transfer  

capacitance  

Ciss  

350 1001

 

1650 pF  

VDS=25V,  

VGS=0V,  

f=1.0MHZ  

Coss  

Crss  

R

G  

104 173 300  

pF  

pF  

Ω

15  

25  

40  

Gate Resistance  

f=1.0MHZ  

0.5  

1.5  

2.5  

Switching Characteristics  

td(on)  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off Fall time  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

9

15.2 21  

ns  

ns  

t

r  

16.5 38.7

 

60  

21.5 46.4 71.5  

6.8 12.8

 

18.8  

V

DD

=100V,I

D

=13A.,  

R

G

=25Ω  

T

d(off)  

t

f  

ns  

ns  

Qg  

12  

27.5 42  

5.7 8.9  

nC  

nC  

nC  

V

DS

=160V,  

I

D

=13A,  

Qgs  

Qgd  

2.5  

V

GS

=10V  

5.8 10.8

 

15.8  

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode  

Forward Voltage  

V

SD  

VGS=0V,IS=13A  

I

S  

–

–

–

–

1.4  

13  

V

A

Maximum Continuous  

Drain-Source  

Diode Forward Current  

Reverse recovery time  

trr  

124 224 324  

0.58 1.38 2.18  

ns  

V

GS

=0V,IF=13A  

dIF/dt=100A/us  

Reverse recovery  

charge  

Qrr  

μC  

Thermal Characteristic  

Parameter  

Symbol  

R

θJC  

Value  

0.89  

62.5  

Unit  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

℃

/W  

R

θJA  

Notes:  

1. Pulse

 

width limited by maximum junction temperature  

2. L=1.6mH,

 

IAS=13A, VDD=50V, RG=25 Ω,Starting TJ=25

℃

 

3. ISD

 

≤13A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25

℃  

4. Pulse

 

T

est

：

Pulse Width ≤300μs, Duty Cycle≤2

％  

5. Essentially

 

independent of operating temperature  

H1.01  

Maspower  

2

MS13N20HGD0  

Test Circuit  

H1.01  

Maspower  

3

MS13N20HGD0  

Typical Electrical and Thermal Characteristics (Curves)  

H1.01  

Maspower  

4

MS13N20HGD0  

H1.01  

Maspower  

5

MS13N20HGD0  

Package Mechanical DATA  

H1.01  

Maspower  

6