MASPOWER-MS33N10FT

MS33N10FT/D  

Features  



Low gate charge  



Low Crss (typical 71pF)  



Fast switching  



100% avalanche tested  



Improved dv/dt capability  



RoHS Compliant  

Applications  



High efficiency switch mode  

Power supplies  



Electronic lamp ballasts  

based on half bridge  



UPS  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DSS  

100  

V

33*  

23  

A

A

I

D

，

T=25

℃  

T=100

℃  

Drain Current -continuous  

Drain Current – pulse

 

（

note 1

）  

I

DM  

132  

±30  

A

V

Gate-Source Voltage  

V

GSS  

Single Pulsed Avalanche Energy  

E

AS  

800  

mJ  

（

note 2

）  

Avalanche Current

（

note 1

）  

Repetitive Avalanche Current

（

note 1

）  

Peak Diode Recovery dv/dt

（

note 3

）  

I

AR  

E

AR  

33  

13  

A

mJ  

dv/dt  

5.9  

V/ns  

PD  

130  

W

TC=25

℃  

-Derate  

Power Dissipation (TO-220)  

Power Dissipation(TO-252)  

1.04  

51  

W/

℃  

above 25

℃  

PD  

W

TC=25

℃  

-Derate  

0.39  

W/

℃  

above 25

℃  

Operating and Storage Temperature  

Range  

Tj,T

STG  

T

L  

-55~+150  

300  

℃

℃

Maximum Lead Temperature for  

H1.03  

Maspower  

1

MS33N10FT/D  

Soldering Purposes  

*Drain current limited by maximum junction temperature  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max Units  

Off-Characteristics  

Drain-Source Voltage

 

BV

DSS  

I

D

=250uA,V

GS

=0V  

100  

–

–

V

Breakdown Voltage  

ΔBV

DSS  

I

D

=250μA, referenced to  

Temperature  

/ΔT

J  

–

0.11  

–

V/

℃  

25

℃

 

Coefficient  

V

DS

=100V,V

GS

=0V  

–

–

–

–

–

–

–

–

1

Tj=25

℃  

μA  

Drain cut-off current  

I

DSS  

V

DS

=80V,Tj=125

℃  

10  

Gate-body leakage  

current,forward  

I

GSSF  

I

GSSR  

V

DS

=0V,V

GS

=30V  

100  

-100  

nA  

nA  

Gate-body leakage  

current,reverse  

V

DS

=0V,V

GS

=-30V  

On-Characteristics  

V

DS

=V

GS

,I

D

=250uA  

Gate Threshold  

Voltage  

V

GS(th)  

R

DS(ON)  

R

G  

2.0  

–

4.0  

44  

–

V

mΩ  

Ω

Static Drain-Source  

On-Resistance  

V

GS

=10V,I

D

=12A  

–

–

–

34  

（

note 3

）  

Gate Resistance  

F=1.0MHz,open drain  

1.8  

19.8  

Forward  

V

DS

=40V , I

D

=16.0A  

g

fs  

–

S

（

note 3

）  

Transconductance  

Dynamic Characteristics  

Input capacitance  

Output capacitance  

Reverse transfer  

capacitance  

Ciss  

–

–

3200  

–

pF  

pF  

VDS=25V,  

VGS=0V,  

f=1.0MHZ  

Coss  

305 405  

Crss  

–

71  

90  

pF  

Switching Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off Fall time  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

td(on)  

–

–

–

–

–

–

–

18  

46  

ns  

ns  

VDD=50V,ID=33A,  

RG=25Ω

，  

t

r  

475 955  

69 149  

T

d(off)  

t

f  

ns  

VGS=10V(note 4,5)  

122 252  

37.0 47.0  

ns  

Qg  

nC  

nC  

nC  

V

DS

=80V,  

I

D

=33A,  

Qgs  

Qgd  

6.6  

–

–

V

GS

=10V(note4,5)  

20.0  

H1.03  

Maspower  

2

MS33N10FT/D  

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode  

Forward Voltage  

VGS=0V,IS=33A  

(note 3)  

V

SD  

–

–

–

–

–

–

1.4  

33  

V

A

A

Maximum Continuous  

Drain-Source  

I

S  

Diode Forward Current  

Maximum Pulsed  

Drain-Source  

I

SM  

132  

Diode Forward Current  

Reverse recovery time  

trr  

–

–

85  

–

–

ns  

VGS=0V,IF=33A  

Reverse recovery  

charge  

dIF/dt=100A/us(note 3)  

Qrr  

250  

uC  

Thermal Characteristic(TO-220)  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

θJC  

R

θJA  

0.96

℃

/W  

62.5

℃

/W  

Thermal Characteristic(TO-252)  

Parameter  

Symbol  

R

θJC  

Value  

2.5  

Unit  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

Notes:  

℃

/W  

℃

/W  

R

θJA  

83  

1

：

Pulse width limited by maximum junction temperature  

2

：

L=0.6mH, IAS=33A, VDD=50V, RG=25 Ω,Starting TJ=25

℃  

3

：

ISD ≤33A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25

℃  

4

：

Pulse

T

est

：

Pulse Width ≤300μs,Duty Cycle≤2

％  

5

：

Essentially independent of operating temperature  

Order Message  

Order codes  

MS33N10FT  

MS33N10FD  

Package  

TO-220  

TO-252  

Packaging  

Tube  

Tube  

H1.03  

Maspower  

3

MS33N10FT/D  

Electrical Characteristics  

H1.03  

Maspower  

4

MS33N10FT/D  

H1.03  

Maspower  

5

MS33N10FT/D  

Package Mechanical DATA  

H1.03  

Maspower  

6

MS33N10FT/D  

H1.03  

Maspower  

7