MASPOWER-MS50N100HGF4

MS50N100HGF4  

Features  



N-Channel,Low R

DS(on)  



High Current Handling Capability  



Fast Intrinsic Diode  



Avalanche Rated  

Applications  



DC-DC Converters  



DC-AC Inverters  



Battery Chargers  



Switch-Mode and Resonant-Mode  

Power Supplies  



DC Choppers  



Temperature and Lighting Controls  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

Drain Current -continuous  

Drain Current – pulse*  

V

DSS  

I

D  

1000  

50  

V

A

A

I

DM  

110  

Gate-Source Voltage  

V

GSS  

E

AS  

PD  

±30  

4

V

J

Single Pulsed Avalanche Energy  

Power Dissipation  

Operating and Storage  

Temperature Range  

900  

W

Tj,T

STG  

T

L  

-55~+150  

300  

℃

℃

Maximum Lead Temperature for  

Soldering Purposes  

*Drain current limited by maximum junction temperature  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max Units  

Off-Characteristics  

Drain-Source Voltage

 

BV

DSS  

I

D

=3mA,V

GS

=0V  

1000  

–

–

–

–

V

μA  

Drain cut-off current  

Gate-body leakage  

current,forward  

I

DSS  

V

DS

=1200,V

GS

=0V  

50  

I

GSSF  

V

DS

=0V,V

GS

=30V  

V

DS

=0V,V

GS

=-30V  

–

–

–

–

200  

nA  

nA  

Gate-body leakage  

current,reverse  

I

GSSR  

-200  

H1.01  

Maspower  

1

MS50N100HGF4  

On-Characteristics  

Gate Threshold  

Voltage  

V

GS(th)  

R

DS(ON)  

Gfs  

V

DS

=V

GS

,I

D

=250uA  

3.5  

–

6.5  

V

mΩ  

S

Static Drain-Source  

On-Resistance  

Forward  

V

GS

=10V,I

D

=1A  

(note1)  

–

–

210  

40  

–

–

V

DS

=20V,I

D

=25A  

(note1)  

transconductance  

Dynamic Characteristics  

Input capacitance  

Output capacitance  

Reverse transfer  

capacitance  

Ciss  

–

–

13  

–

–

nF  

pF  

VDS=25V,  

VGS=0V,  

f=1MHz  

Coss  

1000  

Crss  

–

85  

–

pF  

Switching Characteristics  

td(on)  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off Fall time  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

–

–

–

–

–

–

–

50  

30  

–

–

–

–

–

–

–

ns  

ns  

t

r  

V

DD

=500V,I

D

=25A  

Rg=0.5Ω  

T

d(off)  

t

f  

65  

ns  

25  

ns  

Qg  

260  

75  

nC  

nC  

nC  

V

DD

=500V,I

D

=25A  

V

GS

=10V  

Qgs  

Qgd  

113  

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode  

VGS=0V,IS=35A,  

(note1)  

V

SD  

–

–

–

1.2  

–

V

A

Forward Voltage  

Maximum Continuous  

Drain-Source  

I

S  

50  

Diode Forward Current  

Reverse recovery time  

trr  

–

–

300  

2

–

–

ns  

IF=20A  

dIF/dt=-100A/us  

VR=100V  

Reverse recovery  

charge  

Qrr  

uC  

Thermal Characteristic  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance, Junction-to-Case  

R

θJC  

0.138

℃

/W  

Notes:  

1. Pulse

 

test, t

 

≦

300μs, duty cycle, d

 

≦

2%.  

H1.01  

Maspower  

2

MS50N100HGF4  

Typical Electrical and Thermal Characteristics (Curves)  

H1.01  

Maspower  

3

MS50N100HGF4  

H1.01  

Maspower  

4

MS50N100HGF4  

Package Mechanical DATA  

H1.01  

Maspower  

5