MASPOWER-MS60N60HGB3

MS60N60HGB3/C1  

Features  



V

DS

=600V,I

D

=60A  

R

DS(on)

<0.18Ω @ V

GS

=10V  







100% avalanche tested  

Minimum Lot-to-Lot variations for robust device  

performance and reliable operation  

Applications  













ZVS phase shifted and other full bridge  

Half bridge  

PFC and other boost converter  

Buck converter  

Single and two switch forward  

Flyback  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Limit  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DSS  

V

GSS  

600  

V

V

±

30  

Drain Current-continuous  

I

D  

60  

A

A

Drain Current-pulse

（

1

）  

I

DM  

210  

Single Pulsed Avalanche Energy  

（

2

）  

E

AS  

I

AR  

1580  

28  

mJ  

A

Avalanche Current, Repetitive or  

Non-Repetitive  

PD T

C

=25

℃  

Derate above  

25

℃  

Maximum Power Dissipation  

1040  

W

Operating and Storage  

Temperature Range  

T

J

,T

STG  

-55~+150  

℃

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Typ Max

 

Units  

Drain-Source Voltage  

BV

DSS  

I

DSS  

I

D

=250μA,V

GS

=0V  

V

DS

=V

DSS

,V

GS

=0V  

600  

–

–

–

–

V

Zero Gate Voltage Drain  

Current  

25  

μA  

H1.02  

Maspower  

1

MS60N60HGB3/C1  

Gate-Body Leakage  

Current  

I

GSS  

V

GS

=

±

30V

，

V

DS

=0V  

–

–

±

100 nA  

On-Characteristics  

Gate Threshold Voltage  

V

GS(th)  

V

DS

=V

GS

,I

D

=2.5mA  

V

GS

=10V,I

D

=28A  

2.5  

–

4

5

V

Static Drain-Source  

R

DS(ON)  

0.15 0.18  

Ω

On-Resistance

（

3

）  

Forward  

g

fs  

V

DS

=50V,I

D

=28A  

–

55  

–

S

Transconductance  

Dynamic Characteristics  

Input capacitance  

C

iss  

–

–

11.3  

–

–

nF  

pF  

V

DS

=25V,  

V

GS

=0V,  

Output capacitance  

C

oss  

1040  

f=1.0MHZ  

Reverse transfer  

capacitance  

C

rss  

–

115  

–

pF  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Typ Max Units  

Switching-Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off rise time  

t

d(on)  

–

–

–

–

65  

75  

–

–

–

–

ns  

ns  

ns  

ns  

t

r  

t

d(Off)  

t

f  

V

DS

=400V,I

D

=28A,  

Rg=2.2Ω,V

GS

=15V(4)  

190  

60  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

Q

g  

–

–

–

280  

60  

–

–

–

nC  

nC  

nC  

V

DS

=300V,I

D

=28A,  

V

GS

=0-10V  

Q

gs  

Q

gd  

120  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous  

Drain-Source Diode  

Forward Curret  

V

SD  

V

GS

=0V,I

S

=28A  

–

–

–

1.0  

60  

V

Diode Forward Current  

Reverse recovery time  

Reverse recovery charge  

I

S  

TC=25

℃  

–

–

–

A

Trr  

Qrr  

250 290  

1.41  

nS  

μC  

I

S

=6A,dI/dT=100A/μS  

VR=100V,VGS=0V(3)  

–

H1.02  

Maspower  

2

MS60N60HGB3/C1  

Thermal Characteristic  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance,junction

 

to Case  

R

th

(j-C)  

0.12  

℃

/W  

Case to Sink Thermal Resistance, Flat,  

Greased Surface  

R

th

(C-S)  

0.11  

Order Message  

Marking  

Package  

MS60N60HGB3  

TO-264  

MS60N60HGC1  

Notes:  

TO-247plus  

1. Repetitive

 

Rating: Pulse width and case temperature limited by maximum junction  

temperature.  

2. Starting

 

at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A.  

3. Pulse

 

test: Pulse Width < 380µs, duty cycle < 2%  

4. RG

 

is external gate resistance, not including internal gate resistance or gate driver  

impedance.  

H1.02  

Maspower  

3

MS60N60HGB3/C1  

Electrical Characteristics  

H1.02  

Maspower  

4

MS60N60HGB3/C1  

Package Mechanical DATA  

H1.02  

Maspower  

5