MASPOWER-MS6N100FE

MS6N100FS/T/E/A/D  

Features  













Low gate charge  

Low C

rss

(typ 15pF)  

Fast switchin  

100% avalanche tested  

Improved dv/dt capability  

RoHS product  

Applications  







High frequency switching mode power supply  

Electronic ballast based on half bridge  

LED power supplies  

Absolute Ratings

(

T

c=25

℃

)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DSS  

1000  

V

6

A

A

A

I

D

T=25

℃

 

T=100

℃  

Drain Current-continuous  

3.8  

18*  

Drain Current-pulse (note 1)  

Gate-Source Voltage  

I

DM  

V

GS  

E

AS  

I

AR  

±30  

160  

6

V

mJ  

A

Single pulse avalanche energy(note 2)  

Avalanche Current

（

note 1

）  

Repetitive Avalanche Energy(note 1)  

Peak Diode Recovery  

E

AR  

2

4

mJ  

V/ns  

W

dv/dt  

Power Dissipation (TO-220F)  

74  

Power Dissipation (TO-220/TO-252)  

Power Dissipation (TO-263)  

60  

60  

W

W

W

℃

PD  

Power Dissipation (TO-3PF)  

48  

Operating and Storage Temperature Range

 

T

J

,T

STG  

-55~+150  

Maximum Lead Temperature for Soldering  

T

L  

300  

℃

Purposes  

*Drain current limited by maximum junction temperature  

H1.03  

Maspower  

1

MS6N100FS/T/E/A/D  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max Units  

Drain-Source Voltage  

BV

DSS  

I

D

=250μA,V

GS

=0V 1000  

–

–

–

V

∆BV

DSS

/∆ I

D

=250μA,referenced  

Breakdown Voltage  

Temperature Coefficient  

–

0.9  

V/

℃  

TJ  

to 25

℃  

V

DS

=1000V,V

GS

=0V  

V

DS

=800V,T

C

=125

℃

 

–

–

–

–

1

μA  

μA  

Zero Gate Voltage Drain  

Current  

I

DSS  

10  

Gate body leakage  

current  

I

GSS  

V

DS

=0V,V

GS

=

±

30V  

–

–

±

100 nA  

On-Characteristics  

Gate Threshold Voltage  

V

GS(th)  

V

DS

=V

GS

,I

D

=250μA  

2.0  

–

–

4.0  

V

Static Drain-Source  

On-Resistance  

V

GS

=10V,I

D

=2A

，  

T

C

=25

℃  

R

DS(ON)  

2.6 3.3  

Ω

Forward  

V

DS

=40V,I

D

=4A  

(note 4)  

g

FS  

–

7.7  

–

S

Transconductance  

Dynamic Characteristics  

Input capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

651  

77  

–

–

–

pF  

pF  

pF  

V

DS

=25V, V

GS

=0V,  

f=1.0MHZ  

Output capacitance  

Reverse transfer  

capacitance  

15  

Electrical Characteristics

(T

CASE

=25

℃

unless otherwise specified)  

Parameter  

Symbol Tests

 

conditions Min

 

Type Max Units  

Switching-Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-Off delay time  

Turn-Off rise time  

t

d(on)  

–

–

–

–

12.6  

25  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=450V,I

D

=4A,  

R

GEN

=25Ω  

t

r  

t

d(Off)  

t

f  

46.2  

31  

(note 4,5)  

Total Gate Charge  

Gate-Source charge  

Gate-Drain charge  

Q

g  

–

–

–

14.7  

4

–

–

–

nC  

nC  

nC  

V

DS

=720V,I

D

=4A,  

V

GS

=10V  

Q

gs  

Q

gd  

(note 4,5)  

4.53  

H1.03  

Maspower  

2

MS6N100FS/T/E/A/D  

Drain-Source Diode Characteristics and Maximum Ratings  

Diode Forward Voltage  

(note 3)  

V

SD  

V

GS

=0V,I

S

=6A  

–

–

–

–

1.4  

18  

V

A

Maximum Pulsed  

Drain-Source  

I

SM  

–

Diode Forward Current  

Maximum Continuous  

Drain Source Diode  

Forward Current  

I

S  

–

–

–

6

A

Reverse recovery time  

t

rr  

–

–

467  

–

–

ns  

V

GS

=0V,  

I

S

=4A dI

F

/dt=100A/μs  

(note 4)  

Reverse recovery charge  

Q

rr  

2235  

μC  

Thermal Characteristic  

Value  

Parameter  

Symbol  

Unit  

TO-220/  

TO-220F  

TO-263 TO-3PF  

TO-252  

Thermal Resistance,  

junction to Case  

R

th

(j-C)  

R

th

(j-A)  

1.69  

47.4  

4.2  

0.63  

35  

2.6  

58  

℃

/W  

℃

/W  

Thermal Resistance,  

Junction to Ambient  

68  

Order Codes  

Partnumber  

MS6N100FS  

MS6N100FT  

MS6N100FE  

MS6N100FA  

MS6N100FD  

Notes:  

Marking  

Package  

TO-220F  

TO-220T  

TO-263  

MS6N100FS  

MS6N100FT  

MS6N100FE  

MS6N100FA  

MS6N100FD  

TO-3PF  

TO-252  

1. Pulse

 

width limited by maximum junction temperature  

2. L=10mH,

 

I

AS

=6A, V

DD

=100V, R

G

=25 Ω,Starting T

J

=25

℃

 

3. I

SD

≤6A,di/dt ≤100A/µs,V

DD

≤BV

DSS

, Starting T

J

=25

℃  

4. Pulse

 

T

est

：

Pulse Width ≤300µs,Duty Cycle≤2

％  

5. Essentially

 

independent of operating temperature  

H1.03  

Maspower  

3

MS6N100FS/T/E/A/D  

ELECTRICAL CHARACTERISTICS (curves)  

H1.03  

Maspower  

4

MS6N100FS/T/E/A/D  

H1.03  

Maspower  

5

MS6N100FS/T/E/A/D  

PACKAGE MECHANICAL DATA  

H1.03  

Maspower  

6

MS6N100FS/T/E/A/D  

H1.03  

Maspower  

7

MS6N100FS/T/E/A/D  

H1.03  

Maspower  

8

MS6N100FS/T/E/A/D  

H1.03  

Maspower  

9