MASPOWER-MS6N120FT

Part #	MASPOWER-MS6N120FT
Download	MASPOWER-MS6N120FT

MS6N120FS/T/C

Features

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100% avalanche tested

Avalanche ruggedness

Very low intrinsic capacitances

High speed switching

Very low on-resistance

Applications

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Welder

UPS

PV Inverter

Switching applications

Electrical ratings

Absolute maximum ratings

Parameter

Drain-source voltage (V

GS

= 0)

Symbol

V

DS

Value

Unit

1200

± 20

6

V

Gate- source voltage

Drain current (continuous) at T

C

= 25 °C

Drain current (continuous) at T

C

= 100 °C

Drain current (pulsed)

V

GS

I

D

3.8

A

I

DM

12

Total dissipation at T

C

= 25 °C(TO-247/TO-220)

P

TOT

160

33

W

Total dissipation at T

C

= 25 °C(TO-220F)

Derating factor(TO-247/TO-220)

Derating factor(TO-220F)

P

TOT

W

1.28

0.26

W/

℃

W/

℃

Operating junction temperature

Storage temperature

T

J

-55 to 175

℃

T

stg

Thermal data

Value

Parameter

Symbol

Unit

TO-247

TO-220F

TO-220

Thermal resistance junction-case max

R

thj-case

0.78

3.79

84

Thermal resistance junction-ambient max

R

thj-amb

76

W/

℃

Maximum lead temperature for soldering

T

J

300

purpose

H1.05

Maspower

1

MS6N120FS/T/C

Avalanche characteristics

Parameter

Symbol

Max value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by T

J

max)

I

AR

2.1

A

Single pulse avalanche energy

E

AS

753

mJ

(starting T

J

= 25 °C, I

D

= I

AR

, V

DD

= 50 V)

Electrical Characteristics

(Tvj = 25°C unless otherwise specified)

On /off states

Parameter

Drain-source

Symbol

Test conditions

Min Typ

Max Unit

V

(BR)DSS

I

D

= 1 mA, V

GS

= 0

1200

V

breakdown voltage

Zero gate voltage

V

DS

= Max rating

I

DSS

66

µA

drain current (V

GS

= 0)

V

DS

=Max rating, T

C

=125 °C

Gate-body leakage

current (V

DS

= 0)

I

GSS

V

GS

= ± 30 V

V

DS

= V

GS

, I

D

= 250 µA

V

GS

= 10V, I

D

= 4A

Dynamic

± 100

nA

V

Gate threshold voltage

V

GS(th)

3

4

5

7

Static drain-source on

R

DS(on)

5.5

Ω

resistance

Parameter

Symbol Test

conditions

Min Typ

Max Unit

Forward

g

fs

V

DS

= 15 V, I

D

= 4

V

DS

=25V,f=1MHz,V

GS

=0

V

GS

=0,V

DS

=0 to 1200V

5.7

S

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

C

iss

2310

C

oss

C

rss

330

80

pF

Equivalent Output

capacitance

C

oss eq.

120

2.2

f=1MHz Gate DC Bias=0

Test signal level=20mV

open drain

Gate input

resistance

R

g

Ω

Q

g

Q

gs

Q

gd

85

14

48

Total gate charge

Gate-source charge

Gate-drain charge

V

DD

=1200V,I

D

=8A

V

GS

=10V

nC

Switching times

Parameter

Symbol Test

conditions

Min Typ

Max Unit

Turn-on delay time

t

d(on)

V

DD

= 750 V, I

D

= 4 A,

33

ns

H1.05

Maspower

2

MS6N120FS/T/C

Rise time

Turn-off-delay time

Fall time

t

r

t

d(off)

t

f

R

G

= 4.7 Ω, V

GS

= 10 V

26

46

21

Source drain diode

Parameter

Symbol Test

conditions

Min Typ

Max Unit

Source-drain current

I

SD

6

A

Source-drain current

(pulsed)

I

SDM

12

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Order information

V

SD

t

rr

I

SD

= 6A, V

GS

= 0

1.5

360

5.3

19

V

nS

μ

C

A

I

SD

= 6A, di/dt= 100A/µs

V

DD

= 60 V

Q

rr

I

RRM

t

rr

520

7.6

17

nS

μ

C

A

I

SD

=6A, di/dt=100A/µs

V

DD

= 60V T

J

=150°C

Q

rr

I

RRM

MS6N120FS

TO-220F

TO-220

TO-247

Tube

Tube

Tube

MS6N120FT

MS6N120FC

Electrical characteristics

H1.05

Maspower

3

MS6N120FS/T/C

H1.05

Maspower

4

MS6N120FS/T/C

H1.05

Maspower

5

MS6N120FS/T/C

Package outline dimension

H1.05

Maspower

6

MS6N120FS/T/C

H1.05

Maspower

7

MS6N120FS/T/C

H1.05

Maspower

8