MASPOWER-MSG20T65FQC

MSG20T65FQS/T/E/C  

Features  







Low gate charge  

Trench FS

T

echnology,  

saturation voltage: V

CE(sat)  

,

typ =1.6V,IC=20A and TC =25°C  

RoHS product  



Applications  





General purpose inverters  

UPS  

Absolute Ratings

（

Tc=25

℃）  

MSG20T MSG20T65FQT/

 

MSG20  

Unit  

Parameter  

Symbol  

65FQS MSG20T65FQE

 

T65FQC  

Collector-Emmiter Voltage  

Collector Current-continuous  

Vces  

650  

40  

V

A

A

A

Ic T=25

℃

 

T=100

℃  

20  

Collector Current-pulse(note 1)  

Diode RMS forward current  

Gate-Emmiter Voltage  

I

CM  

80  

40  

20  

A

A

V

A

I

F

T=25

℃  

T=100

℃  

V

GES  

–

±20  

180  

Turn-off safe area  

Surge non repetitive forward  

current tp=10ms sinusoidal  

I

FSM  

80  

A

Power Dissipation  

Diode Forward Current  

P

D

T

C

=25

℃  

T

C

=100

℃  

T

STG  

35  

156  

20  

162  

W

A

Storage Temperature Range  

Operating Temperature Range  

-55~+150  

-55~+175  

℃

℃

T

J  

Maximum Lead Temperature  

for Soldering Purposes  

T

L  

300  

℃

*Collector current limited by maximum Junction temperature  

Thermal Characteristic  

Parameter  

Symbol  

Tests conditions

 

Min Typ Max

 

Units  

Off-Characteristics  

Collector-Emmiter  

Voltage  

BV

CES  

I

C

=500μA,V

GE

=0V 650  

–

–

V

H1.05  

Maspower  

1

MSG20T65FQS/T/E/C  

Breakdown Voltage  

Temperature  

I

C

=1mA,referenced  

△

BV

CES

/

△

T

J  

–

0.5  

–

V/

℃  

to 25

℃  

Coefficient  

Zero Gate Voltage  

Collector Current  

V

CE

=650V,V

GE

=0V,  

I

CES  

–

–

10  

μA  

T

C

=25

℃  

Gate-body leakage  

current  

I

GES  

V

CE

=0V,V

GE

=

±

20V  

–

–

±200 nA  

On-Characteristics  

Gate-Emmiter  

V

CE

=V

GE

,  

lc=250uA  

V

GE(th)  

4.5  

–

6.5  

V

V

Threshold Voltage  

V

GE

=15V,I

C

=20A

，  

T

C

=25

℃  

1.6 2.0  

Collector-Emmiter  

saturation Voltage  

V

CESAT  

Tc=125

℃  

T

C

=175

℃  

1.75 2.15  

1.9 2.3  

V

GE

=15V  

Short Collector current  

Ic(sc)  

VCE=360V tsc<  

10us Tc<=25

℃  

116.7  

A

Dynamic Characteristics  

Input capacitance  

Output capacitance  

Cies  

–

–

1500  

128  

–

–

pF  

pF  

VCE=25V,  

VGE=0V,  

f=1.0MHZ,  

Tc=25

℃  

Coes  

Reverse transfer  

capacitance  

Cres  

–

28.7  

–

pF  

Switching Characteristics  

Turn-On delay time  

Turn-On rise time  

Turn-off delay time  

Turn-off Fall time  

Turn-on energy  

t

d

(on)  

t

r  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

16  

56  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

ns  

ns  

V

CE

=400V,Ic=20A,  

R

G

=10Ω,V

GE

=15V  

Tc=25

℃

Inductive  

Load  

t

d

(off)  

t

f  

52  

ns  

82  

ns  

E

on  

E

off  

E

total  

t

d

(on)  

t

r  

0.79  

0.3  

1.09  

14  

mJ  

mJ  

mJ  

ns  

Turn-off energy  

Total switching Energy  

Turn-On delay time  

Turn-On rise time  

Turn-off delay time  

Turn-off Fall time  

Turn-on energy  

54  

ns  

V

CE

=400V,Ic=20A,  

R

G

=10Ω,V

GE

=15V  

Tc=175

℃  

t

d

(off)  

t

f  

76  

ns  

146  

0.8  

0.49  

ns  

E

on  

E

off  

E

total  

mJ  

mJ  

mJ  

Inductive Load  

Turn-off energy  

Total switching Energy  

1.3  

H1.05  

Maspower  

2

MSG20T65FQS/T/E/C  

Total Gate Charge  

Qg  

–

–

43.9  

10.0  

–

–

VCE=400V,Ic=20A  

R

G

=10Ω,V

GE

=15V  

T

C

=25

℃

(note3,4)  

Gate to emitter charge  

Qge  

nC  

Ω

Gate to collector  

charge  

Qgc  

Rg  

–

–

18.9  

1.8  

–

–

f=1MHz,open  

collector  

Gate resistance  

Anti-Paraller Diode Characteristics and Maximum Ratings  

V

GE

=0V,I

F

=20A.  

–

1.4  

–

V

T

C

=25

℃  

Diode Forward  

Voltage  

V

F  

T

C

=125

℃  

–

–

1.2  

1.0  

–

–

V

V

T

C

=175

℃  

Diode Reverse  

recovery time  

Reverse recovery  

charge  

t

rr  

Q

rr  

Irrm  

t

rr  

–

–

–

–

–

–

254  

347  

2.7  

–

–

–

–

–

–

ns  

nC  

A

V

GE

=0V, IF=20A  

dl=/dt=100A/us  

(note 4)  

T

C

=25

℃  

Diode Reverse  

recovery Current  

Diode Reverse  

recovery time  

Reverse recovery  

charge  

429  

1010  

4

ns  

nC  

A

VGE=0V, IF=20A  

dl=/dt=100A/us  

(note 4)  

Q

rr  

Irrm  

T

C

=175

℃  

Diode Reverse  

recovery Current  

Thermal Characteristics  

MSG20T6 MSG20T65FQT/ MSG20T6  

Parameter  

Symbol  

Unit  

5FQS  

MSG20T65FQE  

5FQC  

IGBT Thermal Resistance,  

Junction to Case  

R

th(j-c)  

R

th(j-c)  

R

th(j-A)  

3.57  

0.77  

0.77  

℃

/W  

℃

/W  

℃

/W  

FRD Thermal Resistance,  

Junction to Case  

7.7  

2.05  

62.5  

2.05  

33.8  

Thermal Resistance,  

Junction to Ambitent  

62.5  

Order Message  

Order codes  

MSG20T65FQS  

MSG20T65FQT  

MSG20T65FQE  

MSG20T65FQC  

Package  

TO-220F  

TO-220  

TO-263  

TO-247  

Packaging  

Tube  

Tube  

Tube  

Tube  

H1.05  

Maspower  

3

MSG20T65FQS/T/E/C  

Electrical Characteristics

(curves)  

H1.05  

Maspower  

4

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

5

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

6

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

7

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

8

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

9

MSG20T65FQS/T/E/C  

Package Mechanical DATA  

H1.05  

Maspower  

10  

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

11  

MSG20T65FQS/T/E/C  

H1.05  

Maspower  

12