MASPOWER-MSG20T65HPE0

Part #MASPOWER-MSG20T65HPE0
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MASPOWER-MSG20T65HPE0
MSG20T65HPC0/E0/T1  
Features  
Low gate charge  
Trench FS
T
echnology,  
saturation voltage: V

CE(sat)  

,
typ =1.6V,IC=20A and TC =25°C  
RoHS product  
Applications  
General purpose inverters  
UPS  
Absolute Ratings
(
Tc=25
℃)  
Parameter  
Symbol  
Typ  
650  
40  
Unit  
V
Collector-Emmiter Voltage  
Vces  
A
Ic  
T=25
℃
 
T=100
℃  
I

CM  

Collector Current-continuous  
Collector Current-pulse  
20  
A
80  
A
40  
A
I

F  

T=25
℃  
Diode RMS forward current  
T=100
℃  
20  
A
Gate-Emmiter Voltage  
V

GES  

±20  
180  
V
A
Turn-off safe area  
Surge non repetitive forward  
current tp=10ms sinusoidal  
Power Dissipation  
–
I

FSM  

80  
A
162  
W
(TO-247/TO-263)  
P

D

T

C

=25
℃  
(TO-220F)  
46  
20  
W
A
Diode Forward Current  
Operating and Storage  
Temperature Range  
T

C

=100
℃  
T

J

,T

STG  

-55~+150  
300  
℃
℃
Maximum Lead Temperature for  
Soldering Purposes  
T

L  

*Collector current limited by maximum Junction temperature  
Thermal Characteristic  
Parameter  
Symbol  
Tests conditions
 
Min Typ
 
Max Units  
Off-Characteristics  
Collector-Emmiter  
Voltage  
BV

CES  

I

C

=500μA,V

GE

=0V 650  
–
–
V
H1.04  
Maspower  
1

MSG20T65HPC0/E0/T1  
Breakdown Voltage  
Temperature  
I

C

=1mA,reference  
△
BV

CES

/
△
T

J  

–
0.5  
–
V/
℃  
d to 25
℃  
Coefficient  
Zero Gate Voltage  
Collector Current  
Gate-body leakage  
current  
V

CE

=650V,V

GE

=0  
V,T

C

=25
℃  
I

CES  

–
–
10  
μA  
V

CE

=0V,V

GE

=
±  
20V  
I

GESF  

–
–
200 nA  
On-Characteristics  
Gate-Emmiter  
VCE=VGE,  
lc=250uA  
V

GE(th)  

4.5  
–
6.5  
V
V
Threshold Voltage  
V

GE

=15V,I

C

=20A
,  
T

C

=25
℃  
1.6 2.0  
Collector-Emmiter  
saturation  
V

CESAT  

Tc=125
℃  
1.75 2.15  
1.9 2.3  
Voltage  
T

C

=175
℃  
VGE=15V  
Short Collector current  
Ic(sc)  
VCE=360V tsc<  
10us Tc=25
℃  
116.7  
A
Dynamic Characteristics  
Input capacitance  
Output capacitance  
Reverse transfer  
capacitance  
Cies  
–
–
1500  
128  
–
–
pF  
pF  
VCE=25V,  
VGE=0V,  
f=1.0MHZ,  
Tc=25
℃  
Coes  
Cres  
–
28.7  
–
pF  
Switching Characteristics  
Turn-On delay time  
Turn-On rise time  
Turn-off delay time  
Turn-off Fall time  
Turn-on energy  
t

d

(on)  
–
–
–
–
–
–
–
16  
56  
–
–
–
–
–
–
–
ns  
ns  
t

r  

t

d

(off)  
t

f  

V

CE

=400V,Ic=20A  
,R

G

=10Ω,V

GE

=15  
V
52  
ns  
82  
ns  
Tc=25
℃  
E

on  

E

off  

E

total  

0.79  
0.3  
1.09  
mJ  
mJ  
mJ  
Inductive Load  
Turn-off energy  
Total switching Energy  
VCE=400V,Ic=20  
AR

G

=10Ω,VGE=1  
5V  
Total Gate Charge  
Qg  
–
43.9  
–
nC  
Anti-Paraller Diode Characteristics and Maximum Ratings  
V

GE

=0V,I

F

=20A.  
–
–
1.4  
1.0  
254  
–
–
V
V
T

C

=25
℃  
Diode Forward  
Voltage  
V

F  

V

GE

=0V,I

F

=20A.  
T

C

=175
℃  
Diode Reverse  
recovery time  
t

rr  

–
–
–
–
ns  
VGE=0V, IF=20A  
dl=/dt=100A/us  
Reverse recovery  
Q

rr  

347  
uC  
H1.04  
Maspower  
2

MSG20T65HPC0/E0/T1  
charge  
Diode Reverse  
Irrm  
–
2.7  
–
A
recovery Current  
Type  
TO-263/TO-247  
Parameter  
Symbol  
Unit  
TO-220F  
IGBT Thermal  
R

th(j-c)  

R

th(j-c)  

R

th(j-A)  

0.77  
2.05  
33.8  
2.71  
℃
/W  
℃
/W  
℃
/W  
Resistance,Junction to Case  
FRD Thermal  
Resistance,Junction to Case  
7.7  
Thermal Resistance,Junction  
to Ambitent  
62.5  
Order information  
type  
Package  
TO-247  
TO-263  
TO-220F  
MSG20T65HPC0  
MSG20T65HPE0  
MSG20T65HPT1  
H1.04  
Maspower  
3

MSG20T65HPC0/E0/T1  
Electrical Characteristics
(curves)  
H1.04  
Maspower  
4

MSG20T65HPC0/E0/T1  
H1.04  
Maspower  
5

MSG20T65HPC0/E0/T1  
H1.04  
Maspower  
6

MSG20T65HPC0/E0/T1  
H1.04  
Maspower  
7

MSG20T65HPC0/E0/T1  
H1.04  
Maspower  
8

MSG20T65HPC0/E0/T1  
Package Mechanical DATA  
H1.04  
Maspower  
9

MSG20T65HPC0/E0/T1  
H1.04  
Maspower  
10