MASPOWER-MSG30T65HHT1
| Part # | MASPOWER-MSG30T65HHT1 |
| Download | MASPOWER-MSG30T65HHT1 |
MSG30T65HHT1/C0
Features
Low gate charge
Trench FS Technology
Fast switching speed
Low switching losses
Applications
PFC
UPS
Inverter
Welding Machine
Absolute Maximum Ratings
Parameter
Symbol Value
Unit
Collector-emitter voltage
Gate-emitter voltage
V
CES
V
GES
650
±30
60
V
T
C
=25°C
Collector current*
I
C
T
C
=100°C
30
120
Pulsed collector current, pulse time limited by Tjmax(note1)
I
CM
I
F
A
T
C
=25°C
Diode forward current
60
T
C
=100°C
30
Diode pulsed current, Pulse time limited by Tjmax
Power dissipation(TO-220F)
I
FM
P
D
P
D
T
J
120
35
W
W
Power dissipation(TO-247)
230
-55 to175
-55 to175
Operating Junction and storage temperature rang(note2)
°C
T
stg
Electrical Characteristics
(Tc =25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Max Unit
Static Characteristics
Collector-emitter breakdown voltag
Gate-emitter threshold voltage
Zero gate voltage collector current
BV
CES
V
GE(th)
I
CES
I
C
= 500uA, V
GE
= 0V
V
CE
= V
GE
, I
C
= 250uA
V
CE
= 650V, V
GE
= 0V
650
3.5
–
–
–
V
4.5
5.5
50
uA
nA
V
Gate-emitter leakage current
I
GES
V
GE
= 20V, V
CE
= 0V
–
–
–
±200
–
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 30A V
GE
= 15V T
C
= 25
1.7
°C
Dynamic and Switching Characteristi
H1.02
Maspower
1
MSG30T65HHT1/C0
Total gate charg
Gate emitter charge
Gate Collector Charge
Input capacitanc
Q
g
Qge
Qgc
C
ies
C
res
C
oes
t
d(on)
t
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
62
9.5
33
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
V
CE
= 520V, I
C
= 30A,
V
GE
= 15V
955
107
33
V
CE
= 25V, V
GE
= 0V,
f = 1MHz
Reverse transfer capacitanc
Output capacitance
Turn-on delay time
Rise tim
pF
nS
mJ
nS
mJ
11
42
Turn-off delay time
Fall time
t
d(off)
tf
89
V
GE
= 15V, V
CC
= 400V,
I
C
= 30A, R
G
= 10Ω,
73
Inductive Load, T
C
= 25°C
Turn-on switching energy
Turn-off switching energy
Total switching energ
Turn-on delay time
Rise tim
E
on
E
off
E
ts
0.53
0.55
1.0
10
t
d(on)
tr
t
d(off)
t
f
44
Turn-off delay time
Fall time
114
130
0.52
0.79
1.30
V
GE
= 15V, V
CC
= 400V,
I
C
= 30A, R
G
= 10Ω,
Inductive Load, T
C
= 150°C
Turn-on switching energy
Turn-off switching energ
Total switching energ
E
on
E
off
E
ts
Diode Characteristics (Tc =25°C unless otherwise specified)
Forward voltag
V
F
t
rr
I
F
=20A,T
C
=25
℃
–
–
–
–
1.4
50
–
–
–
–
V
nS
A
Reverse recovery time
Reverse recovery current
Reverse recovery charge
I
F
=30A,di/dt=200A/μS
I
rr
2.5
0.31
T
C
=25
℃
Q
rr
uC
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal resistance junction-to-ambien
R
θJA
62.5
Thermal resistance junction-to-case for IGBT
R
θJC
R
θJC
3.57
7.7
0.65
40
°C/W
Thermal resistance junction-to-case for Diod
*Collector current limited by maximum junction temperature.
1
:
Pulse width limited by maximum junction temperature.
2
:
Under overload condition, it is allowed to operate at the maximum junction temperature Tvjop=175
℃
,
and the maximum duty ratio is less than 20% (lasting for 60 s at most)
Order Message
Order codes
MSG30T65HHT1
MSG30T65HHC0
Package
TO-220F
TO-247
Packaging
Tube
Tube
H1.02
Maspower
2
MSG30T65HHT1/C0
Typical Performance Characteristic
H1.02
Maspower
3
MSG30T65HHT1/C0
H1.02
Maspower
4
MSG30T65HHT1/C0
H1.02
Maspower
5
MSG30T65HHT1/C0
Package outline dimension
H1.02
Maspower
6
MSG30T65HHT1/C0
H1.02
Maspower
7
