MASPOWER-MSG30T65HHT1

Part #MASPOWER-MSG30T65HHT1
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MASPOWER-MSG30T65HHT1
MSG30T65HHT1/C0  
Features  
Low gate charge  
Trench FS Technology  
Fast switching speed  
Low switching losses  
Applications  
PFC  
UPS  
Inverter  
Welding Machine  
Absolute Maximum Ratings  
Parameter  
Symbol Value
 
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V

CES  

V

GES  

650  
±30  
60  
V
T

C

=25°C  
Collector current*  
I

C  

T

C

=100°C  
30  
120  
Pulsed collector current, pulse time limited by Tjmax(note1)  
I

CM  

I

F  

A
T

C

=25°C  
Diode forward current  
60  
T

C

=100°C  
30  
Diode pulsed current, Pulse time limited by Tjmax  
Power dissipation(TO-220F)  
I

FM  

P

D  

P

D  

T

J  

120  
35  
W
W
Power dissipation(TO-247)  
230  
-55 to175  
-55 to175  
Operating Junction and storage temperature rang(note2)  
°C  
T

stg  

Electrical Characteristics
(Tc =25°C unless otherwise specified)  
Parameter  
Symbol  
Test Condition  
Min Typ
 
Max Unit  
Static Characteristics  
Collector-emitter breakdown voltag  
Gate-emitter threshold voltage  
Zero gate voltage collector current  
BV

CES  

V

GE(th)  

I

CES  

I

C

= 500uA, V

GE

= 0V  
V

CE

= V

GE

, I

C

= 250uA  
V

CE

= 650V, V

GE

= 0V  
650  
3.5  
–
–
–
V
4.5  
5.5  
50  
uA  
nA  
V
Gate-emitter leakage current  
I

GES  

V

GE

= 20V, V

CE

= 0V  
–
–
–
±200  
–
Collector-emitter saturation voltage  
V

CE(sat)  

I

C

= 30A V

GE

= 15V T

C

= 25  
1.7  
°C  
Dynamic and Switching Characteristi  
H1.02  
Maspower  
1

MSG30T65HHT1/C0  
Total gate charg  
Gate emitter charge  
Gate Collector Charge  
Input capacitanc  
Q

g  

Qge  
Qgc  
C

ies  

C

res  

C

oes  

t

d(on)  

t

r  

–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
62  
9.5  
33  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC  
nC  
nC  
V

CE

= 520V, I

C

= 30A,  
V

GE

= 15V  
955  
107  
33  
V

CE

= 25V, V

GE

= 0V,  
f = 1MHz  
Reverse transfer capacitanc  
Output capacitance  
Turn-on delay time  
Rise tim  
pF  
nS  
mJ  
nS  
mJ  
11  
42  
Turn-off delay time  
Fall time  
t

d(off)  

tf  
89  
V

GE

= 15V, V

CC

= 400V,  
I

C

= 30A, R

G

= 10Ω,  
73  
Inductive Load, T

C

= 25°C  
Turn-on switching energy  
Turn-off switching energy  
Total switching energ  
Turn-on delay time  
Rise tim  
E

on  

E

off  

E

ts  

0.53  
0.55  
1.0  
10  
t

d(on)  

tr  
t

d(off)  

t

f  

44  
Turn-off delay time  
Fall time  
114  
130  
0.52  
0.79  
1.30  
V

GE

= 15V, V

CC

= 400V,  
I

C

= 30A, R

G

= 10Ω,  
Inductive Load, T

C

= 150°C  
Turn-on switching energy  
Turn-off switching energ  
Total switching energ  
E

on  

E

off  

E

ts  

Diode Characteristics (Tc =25°C unless otherwise specified)  
Forward voltag  
V

F  

t

rr  

I

F

=20A,T

C

=25
℃
 
–
–
–
–
1.4  
50  
–
–
–
–
V
nS  
A
Reverse recovery time  
Reverse recovery current  
Reverse recovery charge  
I

F

=30A,di/dt=200A/μS  
I

rr  

2.5  
0.31  
T

C

=25
℃  
Q

rr  

uC  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Thermal resistance junction-to-ambien  
R

θJA  

62.5  
Thermal resistance junction-to-case for IGBT  
R

θJC  

R

θJC  

3.57  
7.7  
0.65  
40  
°C/W  
Thermal resistance junction-to-case for Diod  
*Collector current limited by maximum junction temperature.  
1
:
Pulse width limited by maximum junction temperature.  
2
:
Under overload condition, it is allowed to operate at the maximum junction temperature Tvjop=175
℃
,  
and the maximum duty ratio is less than 20% (lasting for 60 s at most)  
Order Message  
Order codes  
MSG30T65HHT1  
MSG30T65HHC0  
Package  
TO-220F  
TO-247  
Packaging  
Tube  
Tube  
H1.02  
Maspower  
2

MSG30T65HHT1/C0  
Typical Performance Characteristic  
H1.02  
Maspower  
3

MSG30T65HHT1/C0  
H1.02  
Maspower  
4

MSG30T65HHT1/C0  
H1.02  
Maspower  
5

MSG30T65HHT1/C0  
Package outline dimension  
H1.02  
Maspower  
6

MSG30T65HHT1/C0  
H1.02  
Maspower  
7