MASPOWER-MSG40T120FH
| Part # | MASPOWER-MSG40T120FH |
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MSG40T120F
H
High speed Trench Fieldstop IGBT
General Description
Features
This IGBT is produced using advanced trench
fieldstop IGBT technology, which provides low
V
CE(sat)
, high switching performance and
excellent quality.
▄
High Speed Switching
▄
Positive Temperature coefficient for easy
paralleling
▄
High ruggedness&good thermal stability
▄
Including fast free-wheeling diode
▄
Very tight parameter distribution
Applications
▄
Welding
TO-247
E
C
G
Absolute Maximum Ratings
Characteristics
Symbol Rating
Unit
V
CE
1200
V
Collector-emitter voltage
V
GE
±20
V
A
Gate-emitter voltage
T
C
=25
℃
80
Collector current
I
C
T
C
=100
℃
40
I
CM
I
F
120
A
A
A
Pulsed collector current,
t
p
limited by
T
jmax
Diode forward current @
T
C
=100
℃
40
I
FM
120
Diode pulsed collector current,
t
p
limited by
T
jmax
Short circuit withstand time
V
GE
=15V,
V
CC
=600V,
T
j
=25°C
Allowed number of short circuit < 1000
Time between short circuits
≥
1.0s
μs
t
SC
3
T
C
=25
℃
312
P
tot
W
Power dissipation
T
C
=100
℃
1
25
T
j
-55~150
Operating junction temperature
Storage temperature
℃
T
stg
-55~150
1/8
maspower
May
.201
8
Revision 1.0
MSG40T120F
H
Thermal Characteristics
Characteristics
Symbol Rating
Unit
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Thermal resistance junction-to-ambient
R
thJC
R
thJCD
R
thJA
0.
40
1.2
40
℃
/W
Electrical Characteristics
(
T
j
=25
℃
unless otherwise specified)
Characteristics
Symbol Test
Condition
Min
Typ
Max
Unit
Static Characteristics
Collector-emitter breakdown voltage
1200
–
–
BV
CES
V
GE
=0V,
I
C
=0.5mA
V
GE
=15V,
I
C
=40A
T
j
=25
℃
V
Collector-emitter saturation voltage
V
CE(sat)
–
–
2.2
3.1
2.
7
–
T
j
=150
℃
Gate-emitter threshold voltage
V
GE(th)
I
CES
I
C
=1.5mA,
V
CE
=
V
GE
V
CE
=1200V,
V
GE
=0V
T
j
=25
℃
5
5.8
6.5
Zero gate voltage collector current
–
–
–
–
0.
1
4
mA
T
j
=150
℃
Gate-emitter leakage current
Transconductance
I
GES
g
FS
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=40A
–
–
–
200
–
nA
S
43
Dynamic Characteristics
Input capacitance
–
–
–
–
C
iss
C
oss
C
rss
6800
200
60
–
–
–
V
CE
=25V
V
GE
=0V
f
=1MHz
Output capacitance
pF
nC
Reverse transfer capacitance
V
CC
=
600
V,
I
C
=40A
V
GE
=15V
–
240
Gate charge
Q
G
2/8
maspower
May
.201
8
Revision 1.0
MSG40T120F
H
Characteristics
Symbol Test
Condition Min
Typ
Max Unit
Switching Characteristics
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
–
–
–
–
–
–
73
–
–
T
j
=25
℃
V
CC
=600V
I
C
=40A
V
GE
=15/0V
R
G
=12Ω
L
load
=500μH
8
1
ns
Turn-off delay time
Fall time
284
47
–
–
–
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
E
on
E
off
E
ts
2.
5
1.
4
3.9
65
–
–
–
–
–
–
–
–
–
mJ
ns
t
d(on)
t
r
t
d(off)
t
f
T
j
=150
℃
V
CC
=600V
I
C
=40A
V
GE
=15/0V
R
G
=12Ω
7
5
Turn-off delay time
Fall time
316
75
Turn-on switching energy
Turn-off switching energy
Total switching energy
E
on
E
off
E
ts
2.4
1.8
4.2
L
load
=500μH
mJ
Diode Characteristics
–
2.3
2.
1
140
2.2
29
2.5
I
F
=40A,
T
j
=25
℃
Forward voltage
V
V
F
–
–
–
–
–
–
–
I
F
=40A,
T
j
=150
℃
T
j
=25
℃
V
R
=600V,
I
F
=40A
di
F
/dt=
500
A/μs
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
rr
–
–
–
–
–
–
ns
μC
A
Q
rr
I
rrm
t
rr
T
j
=150
℃
V
R
=600V,
I
F
=40A
di
F
/dt=
500
A/μs
1
80
3.6
3
5
ns
μC
A
Q
rr
I
rrm
3/8
maspower
May
.201
8
Revision 1.0
MSG40T120F
H
Figure 1. Typical output characteristic
Figure 2. Typical output characteristic
(
I
C
=f(V
CE
),
T
j
= 25°C)
(I
C
=f(V
CE
), T
j
= 150°C)
Figure
4
. Typical switching energy losses as
a function of collector current
(inductive load,
V
CE
=600V,
Figure 3. Typical switching energy losses as
a function of gate resistor
(in
ductive load,
V
CC
=600V,
V
GE
=0/15V, Ic=40A
V
GE
=0/15V,
R
G
=12Ω,
Dynamic test circuit in Figure D)
Dynamic test circuit in Figure D)
May
.201
8
Revision 1.0
4/8
maspower
MSG40T120F
H
Figure 6.
Reverse bias safe operating area
Figure 4. Typical transfer characteristic
(
T
j
= 150° C)
(
I
C
=f(V
GE
),
V
CE
=20V)
Figure
7
. Typical capacitance
characteristic
(
V
GE
=0V,
f
= 1 MHz)
Figure 8. Typical
forward characteristic of
Diode
I
F
=f(V
F
)
May
.201
8
Revision 1.0
5/8
maspower
MSG40T120F
H
Figure 9. Typical
reverse recovery charge
(
Q
rr
=
f(I
F
)
, R
G
=10Ω,V
C
E
=600V)
Figure
10
. Typical
reverse recovery charge
(
Q
rr
=f(I
F
), I
F
=25A,V
C
E
=600V
)
May
.201
8
Revision 1.0
6/8
maspower
MSG40T120F
H
V
GE
90%
V
GE
10%
V
GE
V
CE
90%
I
C
90%
I
C
90%
V
CE
10%
I
C
10%
I
C
I
C
t
d
t
f
t
r
on
t
d
off
Figure A. Definition of switching times
V
GE
90%
V
CE
10%
V
GE
V
CE
t
4
t
2
E
V
I
dt
E
V
I
dt
off
ce
c
on
ce
c
t
1
t
3
0%
I
C
10%
V
CE
10%
V
CE
0%
I
C
I
C
t
3
t
2
t
1
t
4
Figure B. Definition of switching losses
D.U.T
(Diode)
L
U
R
D.U.T
(IGBT)
G
Figure C. Definition of diodes switching characteristics
Figure D. Dynamic test circuit
May
.201
8
Revision 1.0
7/8
maspower
MSG40T120F
H
TO-247
May
.201
8
Revision 1.0
8/8
maspower
