MASPOWER-MSG40T120FQC

MSG40T120FQC  

Features  







Low gate charge.  

Trench FS Technology  

Saturation Voltage:  

VCE(sat) = 1.6V @ IC = 40 A  

RoHS Complaint  



Applications  





General purpose inverters  

UPS  

Absolute Maximum Ratings  

Parameter  

Collector to Emitter Voltage  

Gate to Emitter Voltage  

Turn-off safe area  

Symbol  

Value  

1200  

±20  

Unit  

V

V

CES  

V

GES  

–

160  

A

T

C

=25

℃

 

T

C

=100

℃  

80  

Collector Current  

I

C  

40  

A

Pulsed Collector Current TC=25

℃

*  

Diode forward current @ TC= 100°C  

Maximum Power Dissipation

 

TC=25

℃  

Operating Junction Temperature  

Storage Temperature Range  

I

CM  

I

F  

100  

40  

P

D  

T

J  

342  

W

-55 to 150  

-55 to 150  

T

stg  

℃

Maximum Lead Temp. for soldering  

T

L  

300  

Purposes, 1/8” from case for 5 seconds  

*Collector current limited by maximum junction temperature  

Electrical Characteristics

 

T

C

= 25°C unless otherwise noted  

Parameter Symbol

 

Test Conditions

 

Min Type Max

 

Unit  

On/off Characteristics  

Collector to Emitter  

BV

CES  

V

GE

= 0V, I

C

= 250μA

 

1200  

–

0.6  

–

–

–

V

Breakdown Voltage  

Breakdown Voltage  

IC=0.5mA, referenced  

ΔBV

CES

/ΔT

J  

–

V/

℃  

mA  

nA  

Temperature Coefficient  

to 25

℃  

Zero Gate Voltage  

Collector Current  

VCE=1200V, VGE=0V,  

I

CES  

–

1

TC=25

℃  

Gate-body leakage  

current, forward  

I

GESF  

VCE=0V, VGE =20V  

–

–

200  

H1.01  

Maspower  

1

MSG40T120FQC  

Gate-body leakage  

current, reverse  

I

GESR  

VCE=0V, VGE =-20V  

–

–

-200  

nA  

On-Characteristics  

Gate Threshold Voltage  

V

TH  

VCE =VGE , IC=250μA

 

4.5  

–

6.5  

2.0  

V

V

Collector-Emmiter  

saturation Voltage  

V

GE

=15V I

C

=40A  

V

CESAT  

–

1.6  

Tc=25

℃

 

Dynamic Characteristics  

Input Capacitance  

Output Capacitance  

Cies  

2700  

165  

–

–

–

Coes  

VCE = 25V, VGE = 0V  

f = 1MHz  

–

pF  

Reverse Transfer  

Capacitance  

Cres  

110  

–

–

Switching Characteristics  

Turn-On Delay Time  

Rise Time  

td(on

）  

tr  

–

–

–

–

–

–

–

–

–

85  

50  

–

–

–

–

–

–

–

–

–

nS  

mJ  

nC  

Turn-Off Delay Tim  

Fall Time  

td(off)  

tf  

260  

220  

2.63  

1.34  

3.89  

198  

31  

VCC = 600V, IC = 40A,  

RG = 12Ω, VGE = 15V,  

TC=25

℃  

Turn-On energy  

Turn-off energy  

Total switching energy  

Total Gate Charge  

Gate to Emitter Charge  

Eon  

Eoff  

Etot  

Qg  

Qge  

VCC = 960V, IC = 40A,  

VGE = 15V  

Gate to Collector  

Charge  

Qgc  

–

34.7  

–

Electrical Characteristics of the Diode

T

C

= 25°C unless otherwise noted  

Parameter  

Symbol Test

 

Conditions Min

 

Type Max

 

Unit  

Diode Forward Voltage  

Diode Reverse Recovery Time  

V

FM  

t

rr  

I

F

= 40A  

T

C

=25

℃  

–

–

2.2  

–

–

V

200  

ns  

Diode Peak Reverse Recovery  

Cyrrent  

I

F

=40A,  

di

F

/dt =  

I

rr  

T

C

=25

℃  

T

C

=25

℃  

–

–

18  

–

–

A

350A/μs  

Diode Reverse Recovery  

Charge  

Q

rr  

2500  

nC  

Thermal Characteristics  

Parameter  

Symbol  

Typ  

Unit  

Thermal Resistance, Junction to Case  

Thermal Resistance, Junction to Ambient  

R

θJC  

0.439  

℃

/W  

R

θJA  

31.87  

Package Marking and Ordering Information  

H1.01  

Maspower  

2

MSG40T120FQC  

Device Marking  

Device  

Package  

MSG40T120FQC  

MSG40T120FQC  

TO-247  

Typical Performance Characteristics  

H1.01  

Maspower  

3

MSG40T120FQC  

Package outline dimension  

H1.01  

Maspower  

4