MASPOWER-MSG40T65HHC0

MSG40T65HHC0  

Features  











Fast Switching & Low V

CE[sat]  

High Input Impedance  

VCE(sat) = 1.7V  

High Input Impedance  

Short circuit withstand time 5 µs  

Applications  









PFC  

UPS  

Inverter  

Welding Machine  

Absolute Maximum Ratings  

Parameter  

Symbol Value

 

Unit  

Collector-emitter voltage  

Gate-emitter voltage  

V

CES  

V

GES  

650  

±20  

80  

V

T

C

=25°C  

Collector curre  

I

C  

T

C

=100°C  

40  

120  

A

Pulsed collector current, pulse time limited by Tjmax  

Diode forward current @ T

C

= 100°C  

I

CM  

I

F  

40  

Diode pulsed current, Pulse time limited by Tjmax  

I

FM  

P

D  

T

J  

120  

Power dissipati  

T

C

=25°C  

375  

W

-55 to175  

-55 to175  

Operating Junction and storage temperature rang  

°C  

T

stg  

1

These curves are based on the junction-to-case thermal impedance which is measured with the device  

mounted to a large heat sink, assuming maximum junction temperature of T

J(MAX)

=175°C.  

The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.  

2

Electrical Characteristics

(Tc =25°C unless otherwise specified)  

Parameter  

Symbol  

Test Condition  

Min Typ

 

Max Unit  

Static Characteristics  

Collector-emitter breakdown voltag  

Gate-emitter threshold voltage  

Zero gate voltage collector current  

Gate-emitter leakage current  

BV

CES  

V

GE(th)  

I

CES  

I

C

= 500

μ

A, V

GE

= 0V  

V

CE

= V

GE

, I

C

= 250

μ

A  

V

CE

= 650V, V

GE

= 0V  

V

GE

= 20V, V

CE

= 0V  

650  

4.0  

–

–

–

V

5.0  

6.0  

1000  

±100  

uA  

nA  

I

GES  

–

–

H1.01  

Maspower  

1

MSG40T65HHC0  

Collector-emitter saturation voltage  

V

CE(sat)  

I

C

= 30A V

GE

= 15V T

C

= 25  

–

1.7  

–

V

°C  

Dynamic and Switching Characteristi  

Total gate charg  

Q

g  

–

219  

–

nC  

V

CE

= 520V, I

C

= 40A,  

V

GE

= 15V  

Gate emitter charge  

Gate Collector Charge  

Input capacitanc  

Qge  

Qgc  

C

ies  

C

res  

C

oes  

t

d(on)  

t

r  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

26  

115  

2900  

131  

210  

58  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

nC  

nC  

V

CE

= 25V, V

GE

= 0V,  

f = 1MHz  

Reverse transfer capacitanc  

Output capacitance  

Turn-on delay time  

Rise tim  

pF  

nS  

mJ  

nS  

mJ  

54  

Turn-off delay time  

Fall time  

t

d(off)  

tf  

245  

40  

V

GE

= 15V, V

CC

= 400V,  

I

C

= 40A, R

G

= 7.9Ω,  

Inductive Load, T

C

= 25°C  

Turn-on switching energy  

Turn-off switching energy  

Total switching energ  

Turn-on delay time  

Rise tim  

E

on  

E

off  

E

ts  

1.15  

0.35  

1.5  

t

d(on)  

tr  

t

d(off)  

t

f  

61  

60  

Turn-off delay time  

Fall time  

260  

38  

V

GE

= 15V, V

CC

= 400V,  

I

C

= 40A, R

G

= 7.9Ω,  

Inductive Load, T

C

= 125°C  

Turn-on switching energy  

Turn-off switching energ  

Total switching energ  

E

on  

E

off  

E

ts  

1.8  

0.38  

2.18  

Diode Characteristics (Tc =25°C unless otherwise specified)  

Forward voltag  

V

F  

t

rr  

I

F

=20A,T

C

=25

℃  

–

–

–

–

1.4  

80  

25  

1

–

–

–

–

V

nS  

A

Reverse recovery time  

Reverse recovery current  

Reverse recovery charge  

I

F

=40A,di/dt=1000A/μS  

I

rr  

T

C

=25

℃  

Q

rr  

uC  

Thermal Characteristics  

Parameter  

Symbol  

Value  

40  

Unit  

Thermal resistance junction-to-ambien  

R

θJA  

Thermal resistance junction-to-case for IGBT  

Thermal resistance junction-to-case for Diod  

R

θJC  

R

θJC  

0.4  

°C/W  

1.2  

H1.01  

Maspower  

2

MSG40T65HHC0  

Typical Performance Characteristic  

H1.01  

Maspower  

3

MSG40T65HHC0  

H1.01  

Maspower  

4

MSG40T65HHC0  

H1.01  

Maspower  

5

MSG40T65HHC0  

H1.01  

Maspower  

6

MSG40T65HHC0  

H1.01  

Maspower  

7

MSG40T65HHC0  

Package outline dimension  

H1.01  

Maspower  

8