MASPOWER-MSG80N350FL
| Part # | MASPOWER-MSG80N350FL |
Download  | MASPOWER-MSG80N350FL |
MSG80N350FL
Features
High Current Capability
Low Saturation Voltage:
VCE(sat) = 1.19 V @ IC = 80 A
High Input Impedance
RoHS Complaint
Applications
PDP TV
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
330
±30
V
T
C
=25
℃
T
C
=100
℃
Pulsed Collector Current TC=25
℃
180
Collector Current
I
C
80
A
I
CM
I
F
450
Diode forward current @ T
= 100°C
C
40
A
Maximum Power Dissipation
TC=25
℃
Maximum Power Dissipation
TC=100
℃
Operating Junction Temperature
Storage Temperature Range
420
P
D
W
180
T
J
-55 to 150
-55 to 150
T
stg
℃
Maximum Lead Temp. for soldering
T
L
300
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Typ Max Unit
Thermal Resistance, Junction to Case
R
θJC
(IGBT)
0.3
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θJC
(Diode)
R
θJA
0.8
35
℃
/W
Package Marking and Ordering Information
Device Marking
Device
Package
MOQ
MSG80N350FL
MSG80N350FL
TO-247
H1.01
Maspower
1
MSG80N350FL
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Symbo
l
Test
Parameter
Min Typ Max
Unit
Conditions
On/off Characteristics
G-E Threshold Voltag
V
GE(th)
I
C
= 250uA, V
CE
= V
GE
I
C
= 40A, V
GE
= 15V
I
C
= 180A, V
GE
= 15V
2.5
4
5.5
–
–
1.19 1.45
1.58
1.78
–
–
Collector to Emitter
Saturation Voltage
V
CE(sat)
V
I
C
= 180A, VGE = 15V
–
T
C
= 125
℃
Collector to Emitter
Breakdown Voltage
B
VCE
V
GE
= 0V, I
C
= 400μ
330
–
–
Collector Cut-Off Curren
G-E Leakage Curren
I
CE
I
GE
V
CE
= V
CES
, V
GE
= 0
V
GE
= V
GES
, V
CE
= 0V
–
–
–
–
400
μA
nA
±400
Dynamic Characteristics
Input Capacitance
Output Capacitance
Cies
3900
320
–
–
–
–
Coes
VCE = 30V, VGE = 0V
f = 1MHz
pF
Reverse Transfer
Capacitance
Cres
200
–
–
Switching Characteristics
Turn-On Delay Time
Rise Tim
td(on
）
–
–
–
–
–
–
–
–
–
–
–
33
120
160
220
38
–
VCC = 200V, IC = 40A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC =
25
℃
tr
td(off)
tf
–
Turn-Off Delay Tim
Fall Time
–
260
nS
Turn-On Delay Time
Rise Time
td(on)
tr
–
VCC = 200V, IC = 40A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC =
125
℃
120
163
320
175
25
–
Turn-Off Delay Tim
Fall Time
td(off)
tf
–
350
Total Gate Charge
Gate to Emitter Charg
Gate to Collector Charg
Qg
–
–
–
VCE = 200V, IC = 40A,
VGE = 15V
Qge
Qgc
nC
73
H1.01
Maspower
2
MSG80N350FL
Electrical Characteristics of the Diode
T
C
= 25°C unless otherwise noted
Parameter
Symbol Test
Conditions Min
Typ Max Unit
T
C
=25
℃
T
C
=125
℃
T
C
=25
℃
T
C
=125
℃
T
C
=25
℃
T
C
=125
℃
T
C
=25
℃
T
C
=125
℃
–
–
–
–
–
–
–
–
1..35 1.5
Diode Forward Voltage
V
FM
I
F
= 20A
V
ns
A
1
33
50
4
–
–
–
–
–
–
–
Diode Reverse Recovery
Time
t
rr
I
F
=20A,
di
F
/dt =
Diode Peak Reverse
Recovery Cyrrent
I
rr
6
200A/μs
50
120
Diode Reverse Recovery
Charge
Q
rr
nC
Typical Performance Characteristics
H1.01
Maspower
3
MSG80N350FL
H1.01
Maspower
4
MSG80N350FL
H1.01
Maspower
5
MSG80N350FL
H1.01
Maspower
6
MSG80N350FL
Package outline dimension
Symbol
Min
4.7
Max
5.31
2.59
2.49
1.4
Unit
A
A1
A2
b
2.21
1.5
1
b2
b4
c
1.65
2.59
0.38
20.8
13.08
0.51
15.49
13.46
4.32
2.39
3.43
0.89
21.46
–
D
D1
D2
E
1.35
16.26
–
mm
E1
E2
e
5.49
5.46BSC
L
19.81
–
20.32
4.5
L1
P
3.56
5.38
3.66
6.2
Q
S
6.15BSC
H1.01
Maspower
7
