MATSUKI-ME10N15-G

ME10N15/ME10N15-G  

N-Channel 150-V (D-S) MOSFET  

GENERAL DESCRIPTION  

FE

A

T

URES  

●

R

DS(ON)

≦

345

m

Ω

@VGS=10V  

The ME10N15 is the N-Channel logic enhancement mode power  

field effect transistors, using high cell density, DMOS trench  

technology. This high density process is especially tailored to  

minimize on state resistance. These devices are particularly suited  

for low voltage application such as cellular phone, notebook  

computer power management and other battery powered circuits,  

and low in-line power loss that are needed in a very small outline  

surface mount package.  

●

R

DS(ON)

≦

365

m

Ω

@VGS=4.5V  

●

Super high density cell design for extremely low R

DS(ON)  

●

Exceptional on-resistance and maximum DC current  

capability  

APPLICATIONS  

●

Power Management in Note book  

●

DC/DC Converter  

●

Load Switch  

●

LCD Display inverter  

PIN CONFIGUR

A

T

ION  

(TO-252-3L)  

T

o

p View  

e

Ordering Information

: ME10N15 (Pb-free)  

ME10N15-G (Green product-Halogen free)  

Absolute Maximum Ratings

(T

C

=25

℃

Unless Otherwise Noted)  

Parameter  

Symbol  

V

DS  

Unit  

V

Maximum Ratings  

Drain-Source Voltage  

Gate-Source Voltage  

150  

±20  

V

GS  

V

T

C

=25

℃

 

T

C

=70

℃  

7.6  

Continuous Drain Current  

Pulsed Drain Current  

I

D  

A

A

6.1  

I

DM  

P

D  

30  

T

C

=25

℃  

T

C

=70

℃  

32.1  

20.5  

-55 to 150  

3.9  

Maximum Power Dissipation  

W

℃

Operating Junction and Storage

T

e

mperature Range  

TJ,

T

s

tg  

℃

/W  

R

θJ

C  

Thermal Resistance-Junction to Case

*  

*

*

The device mounted on 1in

2

FR4 board with 2 oz copper  

DCC  

正式發行  

Sep, 2016-Ver1.1  

01  

ME10N15/ME10N15-G  

N-Channel 150-V (D-S) MOSFET  

Electrical Characteristics

(T

C

=25

℃

Unless Otherwise Specified)  

Symbol  

STATIC  

BV

DSS  

V

GS(th)  

I

GSS  

Parameter  

Limit  

Min  

Typ  

Max  

Unit  

V

GS

=0

V

,

I

D

=250

μ

A  

V

DS

=V

GS

, I

D

=250

μ

A  

V

DS

=0

V

,

V

GS

=±20V  

V

DS

=120

V

,

V

GS

=0V  

V

GS

=10

V

,

I

D

= 7A  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

150  

1

V

V

3

±100  

1

Gate Leakage Current  

nA  

μ

A  

I

DSS  

Zero Gate Voltage Drain Current  

285  

290  

0.8  

345  

a

m

Ω  

R

DS(ON)  

Drain-Source On-Resistance  

V

GS

=4.5

V

,

I

D

= 6A  

I

S

=1.8A, V

GS

=0V  

365  

1.2  

V

SD  

Diode Forward Voltage  

V

DYNAMIC  

Qg  

T

o

tal Gate Charge  

17.5  

4.5  

4.7  

538  

55  

Qgs  

Qgd  

C

iss  

C

oss  

C

rss  

t

d(on)  

tr  

Gate-Source Charge  

Gate-Drain Charge  

Input Capacitance  

V

DS

=75

V

,

V

GS

=10V, I

D

=10A  

V

DS

=25

V

,

V

GS

=0

V

,

f=1MHz  

nC  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

21  

11.6  

9.3  

29.3  

3.7  

V

DS

=75

V

,

R

L

=10.68

Ω

,  

V

GEN

=10

V

,

R

G

=6

Ω  

ns  

t

d(off)  

t

f  

Notes: a. Pulse test: pulse width

≦

300us, duty cycle

≦

2%, Guaranteed by design, not subject to production testing.  

b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.  

DCC  

正式發行  

Sep, 2016-Ver1.1  

02  

ME10N15/ME10N15-G  

N-Channel 150-V (D-S) MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Sep, 2016-Ver1.1  

03  

ME10N15/ME10N15-G  

N-Channel 150-V (D-S) MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Sep, 2016-Ver1.1  

04  

ME10N15/ME10N15-G  

N-Channel 150-V (D-S) MOSFET  

TO252-3L Package Outline  

MAX  

2.50  

0.90  

0.90  

6.30  

2.90  

6.75  

5.50  

1.80  

1.10  

0.20  

10.40  

SYMBOL  

MIN  

2.10  

0.40  

0.40  

5.30  

2.20  

6.30  

4.80  

0.90  

0.50  

0.00  

8.90  

A

B

C

D

D1  

E

E1  

L1  

L2  

L3  

H

P

2.30 BSC  

DCC  

正式發行  

Sep, 2016-Ver1.1  

05