MATSUKI-ME12N04
| Part # | MATSUKI-ME12N04 |
Download  | MATSUKI-ME12N04 |
ME12N04/ME12N04-G
N- Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
=28
mΩ@V
GS
=10V (N-Ch)
●
R
DS(ON)
=52
mΩ@V
GS
=4.5V (N-Ch)
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
The ME12N04 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technolog
y
.
T
his high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
●
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
T
o
p View
e
Ordering Information
: ME12N04 (Pb-free)
ME12N04-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
40
±20
22
Gate-Source Voltage
V
GS
V
T
C
=25
℃
T
C
=70
℃
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
18
I
DM
P
D
80
T
C
=25
℃
T
C
=70
℃
25
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
16
℃
T
J
-55 to 150
℃
/W
℃
/W
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
R
θJA
R
θJ
C
42
5
*The device mounted on 1in
2
FR4 board with 2 oz copper
DCC
正式發行
Sep 2015-Ver2.3
01
ME12N04/ME12N04-G
N- Channel 40-V (D-S) MOSFET
Electrical Characteristics
(T
C
=25
℃
Unless Otherwise Specified)
Symbol Parameter
S
T
ATIC
Limit
Min
Typ
Max
Unit
V
GS
=0V, I
D
=250
μ
A
V
(BR)DSS
40
1
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0V, V
GS
=±20V
V
DS
=40V, V
GS
=0V
V
GS
=10V, I
D
= 12A
V
GS
=4.5V, I
D
= 6A
I
S
=1.7A, V
GS
=0V
V
GS(th)
I
GSS
3
±100
1
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
22
40
28
R
DS(ON)
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
52
V
SD
0.8
1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
15
7
V
DS
=20V, V
GS
=10V,ID=12A
V
DS
=20V, V
GS
=4.5V,ID=12A
Qg
nC
Gate-Source Charge
Qgs
4
Qgd
Ciss
Coss
Crss
td(on)
tr
Gate-Drain Charge
Input capacitance
3.5
539
75
23
13
11
pF
ns
Output Capacitance
Reverse Transfer Capacitance
T
u
rn-On Delay
T
i
me
T
u
rn-On Rise
T
i
me
T
u
rn-Off Delay
T
i
me
T
u
rn-Off Fall
T
i
me
V
DS
=20V, V
GS
=0
V
,
f
=1MHz
V
D
s
=15V, R
L
=15
Ω
ID=1A, V
G
s
=10V, R
G
=6
Ω
td(off)
tf
37
4
Notes:a. Pulse test; pulse width
≦
300us, duty cycle
≦
2%
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Sep 2015-Ver2.3
02
ME12N04/ME12N04-G
N- Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Sep 2015-Ver2.3
03
ME12N04/ME12N04-G
N- Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Sep 2015-Ver2.3
04
ME12N04/ME12N04-G
N- Channel 40-V (D-S) MOSFET
TO-252-3L Package Outline
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
SYMBOL
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
A
B
C
D
D1
E
E1
L1
L2
L3
H
0.20
10.40
P
2.30 BSC
DCC
正式發行
Sep 2015-Ver2.3
05
