MATSUKI-ME20N03
| Part # | MATSUKI-ME20N03 |
Download  | MATSUKI-ME20N03 |
ME20N03/ ME20N03-G
N-Channel 30V Enhancement MOSFET
GENERAL DESCRIPTION
FE
A
T
URES
●
R
DS(ON)
≦
15
mΩ@V
GS
=10V
The ME20N03 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
●
R
DS(ON)
≦
20mΩ @V
GS
=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Desktop Computer
●
Video Graphic Accelerate Card
●
Battery Powered System
●
DC/DC Converter
PIN CONFIGUR
A
T
ION
(TO-252)
T
o
p View
e
Ordering Information
: ME20N03 (Pb-free)
ME20N03-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
Unit
Maximum Ratings
Drain-Source Voltage
V
DS
V
GS
30
±20
39
V
V
Gate-Source Voltage
T
C
=25
℃
T
C
=70
℃
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
32
I
DM
P
D
159
37
T
C
=25
℃
T
C
=70
℃
Maximum Power Dissipation
W
24
Operating Junction
T
e
mperature
T
J
-55 to 150
3.3
℃
Thermal Resistance-Junction to Case
R
θJ
C
℃
/W
Note 1: Bonding wire current limit
DCC
Note 2: The device mounted on 1in
2
FR4 board with 2 oz copper
正式發行
Mar,2016-Ver2.2
01
ME20N03/ ME20N03-G
N-Channel 30V Enhancement MOSFET
Electrical Characteristics
(T
C
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min Typ
Max Unit
V
GS
=0
V
,
I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
,
V
GS
=±20V
V
DS
=30
V
,
V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
30
1
V
3
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
±100
1
nA
μ
A
I
DSS
V
GS
=10
V
,
I
D
= 15A
11
15
m
Ω
R
DS(ON)
Drain-Source On-State Resistance
Diode Forward Voltage
V
GS
=4.5
V
,
I
D
= 15A
I
S
=1A, V
GS
=0V
16
20
V
SD
0.75
1.1
V
DYNAMIC
Qg
T
o
tal Gate Charge
V
DS
=15
V
,
V
GS
=10V,I
D
=15A
V
DS
=15
V
,
V
GS
=4.5V,I
D
=15A
18
9
Qg
T
o
tal Gate Charge
nC
pF
ns
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
4.2
4.2
700
120
35
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=15
V
,
V
GS
=0
V
, f
=
1MHz
13.8
178
28.7
8.8
V
DS
=15
V
,
R
L
=1.5
Ω
V
GS
=10
V
,
R
G
=6
Ω
I
D
=15A
td(off)
tf
Notes: a. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Mar,2016-Ver2.2
02
ME20N03/ ME20N03-G
N-Channel 30V Enhancement MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Mar,2016-Ver2.2
03
ME20N03/ ME20N03-G
N-Channel 30V Enhancement MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Mar,2016-Ver2.2
04
ME20N03/ ME20N03-G
N-Channel 30V Enhancement MOSFET
TO-252 Package Outline
MAX
2.50
0.90
0.90
SYMBOL
MIN
2.10
0.40
0.40
A
B
C
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
6.30
2.90
6.75
5.50
1.80
1.10
0.20
10.40
D
D1
E
E1
L1
L2
L3
H
P
2.30 BSC
DCC
正式發行
Mar,2016-Ver2.2
05
