MATSUKI-ME20N15-G
| Part # | MATSUKI-ME20N15-G |
Download  | MATSUKI-ME20N15-G |
ME20N15 / ME20N15-G
N- Channel 150V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
90
mΩ@V
GS
=10V
The ME20N15 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell densit
y
,
D
MOS
trench technolog
y
.
T
his high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
●
R
DS(ON)
≦
110
mΩ@V
GS
=7V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
Load Switch
PIN CONFIGURATION
(TO-252-3L)
T
o
p View
Ordering Information
: ME20N15 (Pb-free)
ME20N15-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
150
±20
V
GS
V
T
C
=25
℃
T
C
=70
℃
20.8
16.6
83
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
I
DM
P
D
T
C
=25
℃
T
C
=70
℃
62.5
40
Maximum Power Dissipation
W
℃
Junction and Storage
T
e
mperature Range
Thermal Resistance-Junction to Case*
T
J,
T
stg
-55 to 150
2
℃
/W
R
θJ
C
* The device mounted on 1in
2
FR4 board with 2 oz copper.
DCC
正式發行
Dec, 2015-Ver1.1
01
ME20N15 / ME20N15-G
N- Channel 150V (D-S) MOSFET
Electrical Characteristics
(T
J
=25
℃
Unless Otherwise Specified)
Symbol
S
T
ATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max
Unit
V
GS
=0V, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0V, V
GS
=±20V
V
DS
=150V, V
GS
=0V
V
GS
=10V, I
D
=10A
V
GS
=7V, I
D
=10A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
150
3.4
V
V
4.6
±100
1
Gate-Body Leakage
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
75.5
84
90
m
Ω
R
DS(ON)
Drain-Source On-Resistance*
Diode Forward Voltage *
110
1
V
SD
I
S
=1A, V
GS
=0V
0.72
V
DYNAMIC
Qg
T
o
tal Gate Charge
32.3
15.7
6.62
1039
136
14
Qgs
Qgd
C
iss
C
oss
C
rss
t
d(on)
t
r
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
V
DD
=75V,V
GS
=10V, I
D
=10A
V
DS
=30V, V
GS
=0
V
,
f
=1MHz
nC
pF
Output Capacitance
Reverse Transfer Capacitance
T
u
rn-On Delay
T
i
me
T
u
rn-On Rise
T
i
me
T
u
rn-Off Delay
T
i
me
T
u
rn-Off Fall
T
i
me
24.9
6.02
49.9
20
V
GS
=10V,V
DD
=75V,
ns
R
G
=3
Ω
,I
D
=1A, R
L
=75
Ω
t
d(off)
t
f
Notes: a.
pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Dec, 2015-Ver1.1
02
ME20N15 / ME20N15-G
N- Channel 150V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver1.1
03
ME20N15 / ME20N15-G
N- Channel 150V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver1.1
04
ME20N15 / ME20N15-G
N- Channel 150V (D-S) MOSFET
TO-252 Package Outline
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
SYMBOL
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
A
B
C
D
D1
E
E1
L1
L2
L3
H
0.20
10.40
P
2.30 BSC
DCC
正式發行
Dec, 2015-Ver1.1
05
