MATSUKI-ME2301
| Part # | MATSUKI-ME2301 |
Download  | MATSUKI-ME2301 |
ME2301/ME2301-G
P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
110m
Ω
@V
GS
=-4.5V
The ME2301 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where low in-line power loss are needed in a very small outline
surface mount package.
●
R
DS(ON)
≦
150m
Ω
@V
GS
=-2.5V
●
Super high density cell design for extremely low R
DS(ON)
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
Load Switch
●
DSC
PIN CONFIGURATION
(SOT-23)
T
o
p View
e
Ordering Information
: ME2301 (Pb-free)
ME2301-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
Maximum Ratings
Unit
V
-20
±8
Gate-Source Voltage
V
GS
V
T
A
=25
℃
T
A
=70
℃
-2.7
Continuous Drain Current *
Pulsed Drain Current
I
D
A
A
-2.1
I
DM
P
D
-11
T
A
=25
℃
T
A
=70
℃
1.3
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
0.8
T
J
-55 to 150
100
℃
Thermal Resistance-Junction to Ambient*
e * The device mounted on 1in
2
FR4 board with 2 oz copper
R
θ
JA
℃/W
DCC
正式發行
Feb, 2012-Ver1.5
01
ME2301/ME2301-G
P-Channel Enhancement Mode Mosfet
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
Parameter
Limit
Min Typ
Max Unit
V
GS
=0
V
, I
D
=-250
μ
A
V
DS
=V
GS
, I
D
=-250
μ
A
V
DS
=0
V
, V
GS
=±8V
V
DS
=-20
V
, V
GS
=0V
V
GS
=-4.5
V
, I
D
= -2.8A
V
GS
=-2.5
V
, I
D
= -2.0A
I
S
=-1A, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
-20
V
-0.4
-1
±100
-1
V
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
90
110
150
-1.4
Drain-Source On-Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
110
-0.7
V
SD
V
DYNAMIC
Qg
T
o
tal Gate Charge
5.8
1.7
1.2
510
53
17
53
32
47
7
Qgs
Qgd
C
iss
C
oss
C
rss
t
d(on)
t
r
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
V
DS
=-6
V
,
V
GS
=-4.5
V
,
I
D
=-2.8A
V
DS
=-15
V
, V
GS
=0
V
, f=1.0MHz
nC
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall time
V
DS
=-6
V
, R
L
=6
Ω
ns
R
GEN
=6
Ω
, V
GS
=-4.5V
t
d(off)
t
f
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%,Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Feb, 2012-Ver1.5
02
ME2301/ME2301-G
P-Channel Enhancement Mode Mosfet
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Feb, 2012-Ver1.5
03
ME2301/ME2301-G
P-Channel Enhancement Mode Mosfet
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Feb, 2012-Ver1.5
04
ME2301/ME2301-G
P-Channel Enhancement Mode Mosfet
SOT-23 Package Outline
MILLIMETERS (mm)
DIM
MIN
MAX
3.00
1.70
1.30
0.50
2.04
0.15
0.20
0.65
1.02
3.00
0.60
A
B
C
D
G
H
J
2.800
1.200
0.900
0.350
1.780
0.010
0.085
0.300
0.890
2.100
0.450
K
L
S
V
DCC
正式發行
Feb, 2012-Ver1.5
05
