MATSUKI-ME2306A
| Part # | MATSUKI-ME2306A |
Download  | MATSUKI-ME2306A |
ME2306A/ME2306A-G
N-Channel 30V (D-S)MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
32m
Ω
@V
GS
=10V
The ME2306A is the N-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state
resistance.
●
R
DS(ON)
≦
38m
Ω
@V
GS
=4.5V
●
R
DS(ON)
≦
50m
Ω
@V
GS
=2.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
PIN CONFIGURATION
●
DSC
(SOT-23)
T
o
p View
●
LCD Display inverter
e
Ordering Information
: ME2306A (Pb-free)
ME2306A-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
Unit
V
Maximum Ratings
30
±12
Gate-Source Voltage
V
GS
V
T
A
=25
℃
T
A
=70
℃
5.38
Continuous Drain Current
Pulsed Drain Current
I
D
4.30
A
I
DM
P
D
21.5
T
A
=25
℃
T
A
=70
℃
1.39
Maximum Power Dissipation
W
0.89
℃
Operating Junction and Storage
T
e
mperature Range
TJ,
T
s
tg
-55 to 150
℃/W
R
θ
JA
90
Thermal Resistance-Junction to Ambient
*
*The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
Oct, 2012-Ver4.6
01
ME2306A/ME2306A-G
N-Channel 30V (D-S)MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ
Max Unit
STATIC PARAMETERS
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
, V
GS
=±12V
V
DS
=30
V
,
V
GS
=0V
V
GS
=10
V
, I
D
= 4A
V
(BR)DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
30
V
Gate Threshold Voltage
0.7
1.4
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
±100
1
nA
μ
A
I
DSS
25
29
39
0.8
32
Drain-Source On-Resistance
a
V
GS
=4.5
V
,
I
D
= 3.5A
V
GS
=2.5
V
,
I
D
= 2.8A
I
S
=1.25A, V
GS
=0V
38
m
Ω
R
DS(ON)
V
SD
50
Diode Forward Voltage
1.2
V
DYNAMIC PARAMETERS
T
o
tal Gate Charge
Qg
15.5
V
DS
=15
V
,
V
GS
=10
V
, I
D
=4A
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
3.2
3.5
0.7
480
70
Ω
f =1MHz
Ciss
Coss
Crss
t
d(on)
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
V
DS
=15
V
,
V
GS
=0
V
, f=1MH
Z
pF
18
8.5
17
V
DD
=15
V
,
R
L
=15
Ω
ns
I
D
=1A, V
GEN
=10
V
,
R
G
=6
Ω
Turn-Off Delay Time
Fall Time
31
t
d(off)
t
f
3
Notes: a. Pulse test; pulse width
≦
380us, duty cycle
≦
2%
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Oct, 2012-Ver4.6
02
ME2306A/ME2306A-G
N-Channel 30V (D-S)MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Oct, 2012-Ver4.6
03
ME2306A/ME2306A-G
N-Channel 30V (D-S)MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Oct, 2012-Ver4.6
04
ME2306A/ME2306A-G
N-Channel 30V (D-S)MOSFET
SOT-23 Package Outline
MILLIMETERS (mm)
DIM
MIN
MAX
3.00
1.70
1.30
0.50
2.04
0.15
0.20
0.65
1.02
3.00
0.60
A
B
C
D
G
H
J
2.800
1.200
0.900
0.350
1.780
0.010
0.085
0.300
0.890
2.100
0.450
K
L
S
V
DCC
正式發行
Oct, 2012-Ver4.6
05
