MATSUKI-ME2345A
| Part # | MATSUKI-ME2345A |
Download  | MATSUKI-ME2345A |
ME2345A/ME2345A-G
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
68m
Ω
@V
GS
=-10V
The ME2345A is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching and low in-line power loss are needed in a very
small outline surface mount package.
●
R
DS(ON)
≦
80m
Ω
@V
GS
=-4.5V
●
R
DS(ON)
≦
100m
Ω
@V
GS
=-2.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
Load Switch
●
DSC
PIN CONFIGURATION
(SOT-23)
T
o
p View
e
Ordering Information
: ME2345A (Pb-free)
ME2345A-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
Maximum Ratings
Unit
V
-30
±12
Gate-Source Voltage
V
GS
V
T
A
=25
℃
T
A
=70
℃
-3.6
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
-2.9
I
DM
P
D
-14
T
A
=25
℃
T
A
=70
℃
1.4
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
1
T
J
-55 to 150
90
℃
Thermal Resistance-Junction to Ambient*
R
θ
JA
℃/W
*The device mounted on 1in
2
FR4 board with 2 oz copper
DCC
正式發行
Jun, 2012-Ver4.4
01
ME2345A/ME2345A-G
P-Channel 30V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
Parameter
Limit
Min Typ
Max Unit
V
GS
=0
V
, I
D
=-250
μ
A
V
DS
=V
GS
, I
D
=-250
μ
A
V
DS
=0
V
, V
GS
=±12V
V
DS
=-24
V
, V
GS
=0V
V
GS
=-10
V
,
I
D
= -4.2A
V
GS
=-4.5
V
, I
D
= -4A
V
GS
=-2.5
V
, I
D
= -2A
I
S
=-1A, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
-30
V
-0.6
-1.3
±100
-1
V
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
57
62
68
m
Ω
R
DS(ON)
Drain-Source On-Resistance
Diode Forward Voltage
80
80
100
-1
V
SD
-0.7
V
DYNAMIC
Qg
T
o
tal Gate Charge
9
2.3
2
V
DS
=-15
V
, V
GS
=-4.5
V
, I
D
=-4A
V
DS
=-15
V
, V
GS
=0
V
,
f=1MHz
nC
pF
Qgs
Qgd
C
iss
C
oss
C
rss
t
d(on)
t
r
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
710
70
20
37
23
46
3
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall time
V
DS
=-15
V
,
R
L
=3.6
Ω
R
GEN
=6
Ω
, V
GS
=-10V
ns
t
d(off)
t
f
Notes: a.
Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Jun, 2012-Ver4.4
02
ME2345A/ME2345A-G
P-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Jun, 2012-Ver4.4
03
ME2345A/ME2345A-G
P-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Jun, 2012-Ver4.4
04
ME2345A/ME2345A-G
P-Channel 30V (D-S) MOSFET
SOT-23 Package Outline
MILLIMETERS (mm)
DIM
MIN
MAX
3.00
1.70
1.30
0.50
2.04
0.15
0.20
0.65
1.02
3.00
0.60
A
B
C
D
G
H
J
2.800
1.200
0.900
0.350
1.780
0.010
0.085
0.300
0.890
2.100
0.450
K
L
S
V
DCC
正式發行
Jun, 2012-Ver4.4
05
