MATSUKI-ME2N7002D

ME2N7002D  

N-Channel MOSFET – ESD Protected  

GENERAL DESCRIPTION  

FEATURES  

●

Simple Drive Requirement  

●

Small Package Outline  

●

ROHS Compliant  

The ME2N7002D is the N-Channel logic enhancement mode power  

field effect transistors are produced using high cell density , DMOS  

trench technology. This high density process is especially tailored to  

minimize on-state resistance. These devices are particularly suited  

for low voltage application such as cellular phone and notebook  

computer power management and other battery powered circuits  

where high-side switching , and low in-line power loss are needed in  

a very small outline surface mount package.  

●

ESD Rating = 2000V HBM  

Mechanical data  

●

●

●

●

●

●

●

High density cell design for low R

DS(ON)  

Voltage controlled small signal switching.  

Rugged and reliable.  

High saturation current capability.  

High-speed switching.  

Not thermal runaway.  

The soldering temperature and time shall  

not exceed 260

℃

for more than 10 seconds.  

PIN CONFIGURATION  

(SOT-23)  

T

o

p View  

Absolute Maximum Ratings

(T

A

=25

℃

Unless Otherwise Noted)  

Parameter  

Drain-Source Voltage  

Symbol  

Ratings  

60  

Unit  

V

V

DS  

V

GS  

Gate-Source Voltage  

±20  

V

Continuous Drain Current  

Pulsed Drain Current (Note 1)  

I

D  

300  

mA  

mA  

I

DM  

2000  

0.35  

P

D

@T

A

=25°C  

P

D

@T

A

=75°C  

T

J

,

T

s

tg  

Maximum Power Dissipation  

W

0.21  

Operating Junction and Storage

T

e

mperature Range  

Junction-to-Ambient Thermal Resistance  

(PCB mounted) (Note 2)  

-55 ~ 150  

°C  

R

θ

JA  

357  

°C/W  

DCC  

正式發行  

Apr,2011-Ver1.0  

01  

ME2N7002D  

N-Channel MOSFET – ESD Protected  

Electrical Characteristics

(T

A

=25

℃

Unless Otherwise Specified)  

Symbol  

BV

DSS  

V

GS(th)  

g

fs  

I

GSS  

I

DSS  

Parameter  

Limit  

Min. Typ. Max.

 

Unit  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

Forward Transconductance  

Gate Body Leakage  

V

GS

=0, I

D

=10uA  

60  

–

–

–

–

–

–

–

–

2.5  

–

V

V

V

DS

=V

GS

, I

D

=250uA  

V

DS

=15V, I

D

=250mA  

V

GS

= ±20V , V

DS

=0V  

V

DS

=60V, V

GS

=0V  

V

GS

=10V, I

D

=500mA  

V

GS

=4.5V, I

D

=200mA  

1.0  

100  

mS  

uA  

uA  

–

–

–

–

±10  

1

Zero Gate Voltage Drain Current  

3

R

DS(ON)  

Drain-Source On-State Resistance  

Ω

4

Dynamic  

I

D

=200mA , V

DS

=15V  

V

GS

=4.5V  

Q

g  

Total Gate Charge  

–

–

0.8  

nC  

nS  

V

DD

=30V , R

L

=150

Ω

,  

I

D

=200mA , V

GEN

=10V  

R

G

=10

Ω  

T

d(on)  

T

d(off)  

Turn-on Time  

Turn-off Time  

–

–

–

–

20  

40  

C

iss  

C

oss  

C

rss  

Input Capacitance  

–

–

–

–

–

–

35  

10  

5

V

GS

=0V  

V

DS

=25V  

pF  

Output Capacitance  

f=1.0MHz  

Reverse Transfer Capacitance  

Source-Drain Diode  

Symbol  

Parameter  

Limit  

Min. Typ. Max.

 

Unit  

0.82 1.3  

V

SD  

Diode Forward Voltage  

I

S

=200mA, V

GS

=0V  

–

V

Notes

：  

1. Maximum

 

DC current limited by the package  

2. Surface

 

mounted on FR4 board, t

≦

5sec.  

DCC  

正式發行  

Apr,2011-Ver1.0  

02  

ME2N7002D  

N-Channel MOSFET – ESD Protected  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Apr,2011-Ver1.0  

03  

ME2N7002D  

N-Channel MOSFET – ESD Protected  

SOT-23 Package Outline  

INCHES  

MIN MAX  

MILLIMETERS  

DIM  

MIN  

MAX  

3.04  

1.40  

1.11  

0.5  

A

B

C

D

G

H

J

0.1102 0.1197

 

2.80  

0.0472 0.0551

 

1.20  

0.0350 0.0440

 

0.89  

0.0150 0.0200

 

0.37  

0.0701 0.0807

 

1.78  

2.04  

0.0005 0.0040

 

0.013 0.100  

0.0034 0.0070

 

0.085 0.177  

K

L

0.007  

–

0.018  

–

0.0350 0.0401

 

0.89  

0.0830 0.1039

 

2.10  

0.0177 0.0236

 

0.45  

1.02  

2.64  

0.60  

S

V

DCC  

正式發行  

Apr,2011-Ver1.0  

04  

ME2N7002D  

N-Channel MOSFET – ESD Protected  

Device name:ME2N7002D  

Package:SOT-23  

Marking Code:  

K72  

˙

˙˙  

K72: Device Marking Code  

M: Date code  

MONTH CODE  

ODD YEARS(2007,2009)  

EVEN YEARS(2006,2008)  

Jan  

Feb  

Mar  

Apr  

May  

Jun  

Jul  

1

2

Jan  

Feb  

Mar  

Apr  

May  

Jun  

Jul  

E

F

3

H

J

4

5

K

L

N

P

6

7

Aug  

Sep  

Oct  

Nov  

Dec  

8

Aug  

Sep  

Oct  

Nov  

Dec  

9

U

X

Y

Z

T

V

C

DCC  

正式發行  

Apr,2011-Ver1.0  

05